Method for permanently bonding wafers by a connecting layer by means of solid state diffusion or phase transformation

Patent metadata

Field	Value
Publication number	US-10163681-B2
Application number	US-201114232911-A
Country	US
Kind code	B2
Filing date	Aug 30, 2011
Priority date	Aug 30, 2011
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

A method for bonding of a first solid substrate to a second solid substrate which contains a first material with the following steps, especially the following sequence: formation or application of a function layer which contains a second material to the second solid substrate, making contact of the first solid substrate with the second solid substrate on the function layer, pressing together the solid substrates for forming a permanent bond between the first and second solid substrate, at least partially reinforced by solid diffusion and/or phase transformation of the first material with the second material, an increase of volume on the function layer being caused.

First claim

The invention claimed is:

1. A method for bonding of a first solid substrate to a second solid substrate, the method comprising:
forming or applying a function layer on the second solid substrate, the function layer containing a second material,
contacting the first solid substrate with the function layer on the second solid substrate, the first solid substrate containing a first material, and
pressing together the first and second solid substrates to form a permanent bond between the first solid substrate and the second solid substrate and at least partially reinforce the permanent bond by solid diffusion of the second material contained in the function layer into the first material contained in the first solid substrate such that the function layer is consumed by the first solid substrate, the second solid substrate, or a combination thereof,
wherein the function layer has an average thickness in a range between 0.1 nm and 25 nm, before formation of the permanent bond between the first solid substrate and the second solid substrate,
wherein the solid diffusion is induced on respective contact surfaces of the first and second solid substrates at an interface between the first and second solid substrates, and
wherein gaps between the respective contact surfaces at the interface are closed by volume expansion of at least one of the respective contact surfaces caused by the solid diffusion and the step of pressing together the first and second solid substrates.

2. The method as claimed in claim 1 , wherein the formation of the permanent bond takes place at a temperature between room temperature and 500° C.

3. The method as claimed in claim 2 , wherein said temperature is between room temperature and 200° C.

4. The method as claimed in claim 2 , wherein said temperature is between room temperature and 150° C.

5. The method as claimed in claim 2 , wherein said temperature is between room temperature and 100° C.

6. The method as claimed in claim 2 , wherein said temperature is between room temperature and 50° C.

7. The method as claimed in claim 2 , wherein the formation of the permanent bond takes place during a maximum 12 days.

8. The method as claimed in claim 2 , wherein the formation of the permanent bond takes place during a maximum 1 day.

9. The method as claimed in claim 2 , wherein the formation of the permanent bond takes place during a maximum 1 hour.

10. The method as claimed in claim 2 , wherein the formation of the permanent bond takes place during a maximum 15 minutes.

11. The method as claimed in claim 1 , wherein the permanent bond has a bond strength of greater than 1.5 J/m 2 .

12. The method as claimed in claim 11 , wherein the bond strength is greater than 2 J/m 2 .

13. The method as claimed in claim 11 , wherein the bond strength is greater than 2.5 J/m 2 .

14. The method as claimed in claim 1 , wherein, during the solid diffusion, a mixed material is formed having a molar volume that is greater than a molar volume of the second material and of the first material.

15. The method as claimed in claim 1 , further comprising plasma activating surfaces of the solid substrates prior to and/or after the application/formation of the function layer.

16. The method as claimed in claim 1 , wherein the solid diffusion is limited to a first surface layer of the first solid substrate having a maximum initial thickness less than 1 μm.

17. The method as claimed in claim 16 , wherein the maximum initial thickness is smaller than 100 nm.

18. The method as claimed in claim 16 , wherein the maximum initial thickness is smaller than 10 nm.

19. The method as claimed in claim 16 , wherein the maximum initial thickness is smaller than 1 nm.

20. The method as claimed in claim 1 , wherein the step of pressing together the first and second solid substrates takes place at a pressure between 0.1 and 10 MPa.

21. The method as claimed in claim 1 , wherein during forming of the permanent bond, a solubility boundary of the first material contained in the first solid substrate for the second material contained in the function layer is exceeded only slightly.

22. The method as claimed in claim 21 , wherein, during formation of the permanent bond, a solubility boundary of the first material contained in the first solid substrate for the second material contained in the function layer is exceeded at no site of solid diffusion.

23. The method as claimed in claim 1 , wherein the solid diffusion takes place at least predominantly as grain boundary diffusion.

24. The method as claimed in claim 1 , wherein the second solid substrate contains the first material, and
wherein the the function layer is consumer by the combination of the first solid substrate and the second solid substrate.

25. The method as claimed in claim 1 , wherein the first material is a first metal and the second material is a second metal.

26. A method for bonding of a first solid substrate to a second solid substrate, the method comprising:
forming or applying a function layer on the second solid substrate, the function layer containing a second material,
contacting the first solid substrate with the function layer on the second solid substrate, the first solid substrate containing a first material, and
pressing together the first and second solid substrates to form a permanent bond between the first solid substrate and the second solid substrate and at least partially reinforce the permanent bond by phase transformation of the first material contained in the first solid substrate with the second material contained in the function layer such that the function layer is consumed by the first solid substrate, the second solid substrate, or a combination thereof,
wherein the function layer has an average thickness in a range between 0.1 nm and 25 nm, before formation of the permanent bond between the first solid substrate and the second solid substrate,
wherein the phase transformation is induced on respective contact surfaces of the first and second solid substrates at an interface between the first and second solid substrates, and
wherein gaps between the respective contact surfaces at the interface are closed by volume expansion of at least one of the respective contact surfaces caused by the phase transformation and the step of pressing together the first and second solid substrates.

Assignees

• Martinschitz Klaus
• Wimplinger Markus
• Rebhan Bernhard
• Hingerl Kurt
• Ev Group E Thallner Gmbh

Inventors

• Martinschitz Klaus
• Wimplinger Markus
• Rebhan Bernhard
• Hingerl Kurt

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W72/07173

  Means for moving chips, wafers or other parts, e.g. conveyor belts · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/934

  Cross-sectional shape, i.e. in side view · CPC title

• H10W72/59

  Bond pads specially adapted therefor · CPC title