Semiconductor element cleaning solution that suppresses damage to tantalum-containing materials, and cleaning method using same

Patent metadata

Field	Value
Publication number	US-10160938-B2
Application number	US-201515502659-A
Country	US
Kind code	B2
Filing date	Oct 2, 2015
Priority date	Nov 13, 2014
Publication date	Dec 25, 2018
Grant date	Dec 25, 2018

Abstract

According to the present invention, it is possible to provide a cleaning method for removing a photoresist and dry etching residue on a surface of a semiconductor element having a low-k film and a material that contains 10 atom % or more of tantalum, wherein the cleaning method is characterized by using a cleaning solution that contains 0.002-50 mass % of hydrogen peroxide, 0.001-1 mass % of an alkaline earth metal compound, an alkali, and water.

First claim

The invention claimed is:

1. A cleaning method for removing a photoresist and dry etching residue on a surface of a semiconductor element comprising a low-k film and a material that comprises 10 atomic % or more of tantalum, said cleaning method comprising contacting said semiconductor element with a cleaning solution comprising 0.002 to 50% by mass of hydrogen peroxide, 0.001 to 1% by mass of an alkaline earth metal compound, an alkali, and water, wherein a pH value of the cleaning solution is 8 to 13.8.

2. The cleaning method according to claim 1 , wherein the material that comprises 10 atomic % or more of tantalum is at least one substance selected from the group consisting of tantalum oxide, tantalum nitride and tantalum.

3. The cleaning method according to claim 1 , wherein the alkaline earth metal compound is at least one selected from the group consisting of a calcium compound, a strontium compound and a barium compound.

4. The cleaning method according to claim 1 , wherein a content of the alkali is 0.1 to 20% by mass.

5. The cleaning method according to claim 1 , wherein the alkali is at least one selected from the group consisting of potassium hydroxide, potassium acetate, potassium carbonate, potassium phosphate, ammonia, tetramethylammonium hydroxide, triethylamine, ethanolamine and 1-amino-2-propanol.

6. A cleaning solution which comprises 0.002 to 50% by mass of hydrogen peroxide, 0.001 to 1% by mass of an alkaline earth metal compound, an alkali, and water, wherein a pH value of the cleaning solution is 8 to 13.8.

7. The cleaning solution according to claim 6 , wherein the alkaline earth metal compound is at least one selected from the group consisting of a calcium compound, a strontium compound and a barium compound.

8. The cleaning solution according to claim 6 , wherein a content of the alkali is 0.1 to 20% by mass.

9. The cleaning solution according to claim 6 , wherein the alkali is at least one selected from the group consisting of potassium hydroxide, potassium acetate, potassium carbonate, potassium phosphate, ammonia, tetramethylammonium hydroxide, triethylamine, ethanolamine and 1-amino-2-propanol.

10. The cleaning method according to claim 1 , wherein a pH value of the cleaning solution is 8.5 to 13.5.

11. The cleaning method according to claim 1 , wherein said cleaning solution comprises 0.1 to 50% by mass of said hydrogen peroxide, 0.003 to 1% by mass of said alkaline earth metal compound, and a content of said alkali is 0.5 to 20% by mass.

12. The cleaning method according to claim 1 , wherein the material that contains 10 atomic % or more of tantalum is at least one substance selected from the group consisting of tantalum oxide, tantalum nitride and tantalum, the alkaline earth metal compound is at least one selected from the group consisting of a calcium compound, a strontium compound and a barium compound, and the alkali is at least one selected from the group consisting of potassium hydroxide, potassium acetate, potassium carbonate, potassium phosphate, ammonia, tetramethylammonium hydroxide, triethylamine, ethanolamine and 1-amino-2-propanol.

13. The cleaning method according to claim 1 , wherein the cleaning solution is contacted with said semiconductor element at a temperature of 20 to 80° C. for a time period of 0.3 to 120 minutes.

14. The cleaning solution according to claim 6 , wherein a pH value of the cleaning solution is 8.5 to 13.5.

15. The cleaning solution according to claim 6 , wherein said cleaning solution comprises 0.1 to 50% by mass of said hydrogen peroxide, 0.003 to 1% by mass of said alkaline earth metal compound, and a content of said alkali is 0.5 to 20% by mass.

16. The cleaning solution according to claim 6 , wherein the alkaline earth metal compound is at least one selected from the group consisting of a calcium compound, a strontium compound and a barium compound, and the alkali is at least one selected from the group consisting of potassium hydroxide, potassium acetate, potassium carbonate, potassium phosphate, ammonia, tetramethylammonium hydroxide, triethylamine, ethanolamine and 1-amino-2-propanol.

Assignees

• Mitsubishi Gas Chemical Co

Inventors

• OIE Toshiyuki
• Shimada Kenji

Classifications

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• H10P50/287

  by chemical means · CPC title

• H10P70/234 Primary

  the processing being the formation of vias or contact holes · CPC title

• H10P52/00

  Grinding, lapping or polishing of wafers, substrates or parts of devices · CPC title

• H10P70/15

  by wet cleaning only (H10P70/52 takes precedence) · CPC title