Through silicon via based photovoltaic cell

Patent metadata

Field	Value
Publication number	US-10158034-B2
Application number	US-201415127207-A
Country	US
Kind code	B2
Filing date	Jun 27, 2014
Priority date	Jun 27, 2014
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

An embodiment includes an apparatus comprising: a first photovoltaic cell; a first through silicon via (TSV) included in the first photovoltaic cell and passing through at least a portion of a doped silicon substrate, the first TSV comprising (a)(i) a first sidewall, which is doped oppositely to the doped silicon substrate, and (a)(ii) a first contact substantially filling the first TSV; and a second TSV included in the first photovoltaic cell and passing through at least another portion of the doped silicon substrate, the second TSV comprising (b)(i) a second sidewall, which comprises the doped silicon substrate, and (b)(ii) a second contact substantially filling the second TSV; wherein the first and second contacts each include a conductive material that is substantially transparent. Other embodiments are described herein.

First claim

What is claimed is:

1. An apparatus comprising:
a first photovoltaic cell;
a first through silicon via (TSV) included in the first photovoltaic cell and passing through at least a portion of a doped silicon substrate, the first TSV comprising (a)(i) a first sidewall, which is doped oppositely to the doped silicon substrate, and (a)(ii) a first contact substantially filling the first TSV; and
a second TSV included in the first photovoltaic cell and passing through at least another portion of the doped silicon substrate, the second TSV comprising (b)(i) a second sidewall, which comprises the doped silicon substrate, and (b)(ii) a second contact substantially filling the second TSV;
wherein the first and second contacts each include a conductive material that is substantially transparent;
wherein the first sidewall contacts the doped silicon substrate at an interface that includes a PN junction;
wherein the PN junction is at least 50 μm long.

2. The apparatus of claim 1 , wherein a first bottom surface of the first contact couples to a first reflective metal portion and a second bottom surface of the second contact couples to a second reflective metal portion, the first and second reflective metal portions configured to reflect light into the first and second TSVs.

3. The apparatus of claim 2 , wherein the first reflective metal portion directly contacts a bottom surface of the doped silicon substrate.

4. The apparatus of claim 2 , wherein the first contact is an anode, the second contact is a cathode, the doped silicon substrate is p doped, and the first sidewall is n doped.

5. The apparatus of claim 1 , wherein a first bottom portion of the first contact is narrower than a first top portion of the first contact.

6. The apparatus of claim 1 , comprising:
a second photovoltaic cell;
an additional TSV included in the second photovoltaic cell and passing through at least a portion of the doped silicon substrate, the additional TSV comprising (c)(i) an additional sidewall, which is doped oppositely to the doped silicon substrate, and (c)(ii) an additional contact substantially filling the additional TSV; and
wherein the second TSV is included in both the first and second photovoltaic cells;
wherein the additional contact includes the conductive material.

7. The apparatus of claim 1 , comprising:
a second photovoltaic cell;
an additional TSV included in the second photovoltaic cell and passing through at least another portion of the doped silicon substrate, the additional TSV comprising (c)(i) an additional sidewall, which comprises the doped silicon substrate, and (c)(ii) an additional contact substantially filling the additional TSV; and
wherein the first TSV is included in both the first and second photovoltaic cells;
wherein the additional contact includes the conductive material.

8. The apparatus of claim 1 , wherein the PN junction extends from a top of the first sidewall to a bottom of the first sidewall and the first sidewall extends from a top of the doped silicon substrate to a bottom of the doped silicon substrate.

9. The apparatus of claim of claim 1 , wherein the PN junction extends below a device layer formed at a top portion of the doped silicon substrate.

10. The apparatus of claim of claim 1 , wherein a first bottom portion of the first contact is broader than a first top portion of the first contact.

11. The apparatus of claim 1 , wherein the first photovoltaic cell is included on a system on a chip (SOC) and electrically couples to at least one of a battery and a transistor, the at least one of the battery and the transistor being located outside the first photovoltaic cell but on the SOC.

12. The apparatus of claim 1 , wherein a top of the first contact is uncovered and configured to pass light into the TSV.

13. An apparatus comprising:
a first via, included in a first photovoltaic cell and extending from a top surface of a doped substrate to a bottom surface of the doped substrate, comprising (a)(i) a first sidewall oppositely doped to the doped substrate, and (a)(ii) a first contact substantially filling the first via; and
a second via, included in the first photovoltaic cell and extending from the top surface to the bottom surface, comprising (b)(i) a second sidewall comprising the doped substrate, and (b)(ii) a second contact substantially filling the second via;
an additional via, included in a second photovoltaic cell and extending from the top surface to the bottom surface, comprising (c)(i) an additional sidewall oppositely doped to the doped substrate, and (c)(ii) an additional contact substantially filling the additional via;
wherein (d)(i) the first and second contacts each include a transparent conductive material, (d)(ii) the second via is included in both the first and second photovoltaic cells; and (d)(iii) the additional contact includes the transparent conductive material.

14. The apparatus of claim 13 , wherein bottoms of the first and second contacts couple to a reflective metal that directly contacts a bottom surface of the doped substrate.

15. The apparatus of claim 13 , wherein the first sidewall contacts the doped substrate at an interface that includes a PN junction that extends from a top of the doped substrate to a bottom of the doped substrate.

16. A method comprising:
forming a reflective metal in direct contact with a bottom surface of a doped substrate;
patterning the reflective metal into portions not contacting each other;
forming first and second vias, to be included in a first photovoltaic cell, which each extend from a top surface of the doped substrate to a bottom surface of the doped substrate;
doping a first sidewall of the first via in a manner oppositely doped to the doped substrate; and
forming first and second contacts substantially filling the first and second vias and coupled to the reflective metal;
wherein the first and second contacts each include a conductive material that is substantially transparent;
wherein the first sidewall and the doped silicon substrate comprise a PN junction that is at least 50 μm long.

17. The method of claim 16 , wherein the first sidewall contacts the doped substrate at an interface that includes the PN junction and the PN junction extends from a top of the doped substrate to a bottom of the doped substrate.

18. The method of claim 17 , comprising:
forming an additional via, to be included in a second first photovoltaic cell, which extends from the top surface to the bottom surface;
doping an additional sidewall of the additional via in a manner oppositely doped to the doped substrate; and
forming an additional contact substantially filling the additional via and coupled to the reflective media;
wherein the second via is included in both the first and second photovoltaic cells and the additional contact includes the transparent conductive material.

19. The method of claim 17 , wherein the first contact is an anode, the second contact is a cathode, the doped substrate is p doped, and the first sidewall is n doped.

20. The apparatus of claim 1 , wherein the second sidewall is doped at a concentration level of dopant and the doped silicon substrate is substantially doped at the concentration level of dopant.

21. The apparatus of claim 1 , wherein:
the first contact extends above the doped silicon substrate; and
the first contact does not extend below the doped silicon substrate.

Assignees

• Intel Corp

Inventors

• Phoa Kinyip
• Nidhi Nidhi
• Jan Chia-Hong
• Hafez Walid M
• Chen yi wei

Classifications

• Y02E10/52

  PV systems with concentrators · CPC title

• H01L31/1884

  Electricity · mapped topic

• H01L31/068

  Electricity · mapped topic

• H01L31/028

  Electricity · mapped topic

• H02S40/38

  Energy storage means, e.g. batteries, structurally associated with PV modules · CPC title