Getter, MEMS device and method of forming the same

Patent metadata

Field	Value
Publication number	US-10155214-B2
Application number	US-201414252835-A
Country	US
Kind code	B2
Filing date	Apr 15, 2014
Priority date	Apr 15, 2014
Publication date	Dec 18, 2018
Grant date	Dec 18, 2018

Abstract

A getter is provided. The getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum. A MEMS device is provided. The MEMS device includes a substrate and a getter over the substrate. The getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum. A method of forming a MEMS device is provided. The method includes the following operations: providing a substrate; and providing a getter over the substrate, wherein the getter consists essentially of from about 0% to 50% of titanium, from about 0% to 50% zirconium, and from about 5% to 50% of tantalum, and wherein all of the percentages are atomic percentages.

First claim

What is claimed is:

1. A MEMS device, comprising:
a substrate including a top surface, a cavity extending downward from the top surface, and a vertical side surface and a horizontal bottom surface bounding the cavity; and
a getter overlying the vertical side surface and the horizontal bottom surface, the getter consisting essentially of
from a non-zero amount up to about 50% of titanium,
from a non-zero amount up to about 50% zirconium, and
from about 5% to 50% of tantalum,
all of the percentages being atomic percentages; and

a eutectic material overlying the substrate's top surface from a top end of the side surface.

2. A MEMS device, comprising:
a substrate including a cavity extending downward from a top surface, a horizontal bottom surface bounding the cavity and a vertical side surface bounding the cavity;
a getter overlying the horizontal bottom surface of the cavity, wherein the getter includes
from about 10% to 50% of titanium,
from about 10% to 50% zirconium, and
from about 5% to 50% of tantalum,
all of the percentages being atomic percentages; and

a eutectic material overlying the substrate's top surface from a top end of the side surface.

3. A method of forming a MEMS device, comprising:
providing a substrate that includes a top surface, a cavity extending downward from the top surface, and a vertical side surface bounding the cavity; and
providing a getter overlying the vertical side surface of the cavity, wherein the getter consists essentially of
from a non-zero amount up to about 50% of titanium,
from a non-zero amount up to about 50% zirconium, and
from about 5% to 50% of tantalum, and
wherein all of the percentages are atomic percentages, and

providing a eutectic material overlying the substrate's top surface from a top end of the side surface.

4. The device of claim 1 , wherein titanium is from about 33.3%, zirconium is from about 33.3%, and tantalum is from about 33.3%, in terms of atomic percentages of the getter.

5. The device of claim 1 , wherein titanium is from about 50%, zirconium is from about 20%, and tantalum is from about 30%, in terms of atomic percentages of the getter.

6. The device of claim 1 , wherein titanium is from about 10% to 40%, and the zirconium is from about 10% to 40%, in terms of atomic percentages of the getter.

7. The device of claim 1 , wherein the getter overlies the side surface from the top end of the side surface to a bottom end of the side surface as well as the horizontal bottom surface.

8. The device of claim 6 , wherein titanium is from about 10% to 20% in terms of atomic percentages of the getter.

9. The device of claim 6 , wherein titanium is from about 20% to 30% in terms of atomic percentages of the getter.

10. The device of claim 6 , wherein titanium is from about 30% to 40% in terms of atomic percentages of the getter.

11. The device of claim 6 , wherein zirconium is from about 10% to 20% in terms of atomic percentages of the getter.

12. The device of claim 6 , wherein zirconium is from about 20% to 30% in terms of atomic percentages of the getter.

13. The device of claim 6 , wherein zirconium is from about 30% to 40% in terms of atomic percentages of the getter.

14. The device of claim 6 , wherein zirconium is from about 15% to 35% in terms of atomic percentages of the getter.

15. The device of claim 6 , wherein tantalum is from about 5% to 40% in terms of atomic percentages of the getter.

16. The device of claim 6 , wherein titanium is from about 47.5%, zirconium is from about 47.5%, and tantalum is from about 5%, in terms of atomic percentages of the getter.

17. The method of claim 6 , further comprising:
using the eutectic material for wafer bonding.

18. The device of claim 2 , wherein the getter overlies the side surface from a top end of the side surface to a bottom end of the side surface as well as the horizontal bottom surface.

19. The device of claim 18 , wherein:
the getter is lining both the vertical side surface and the horizontal bottom surface; and
the getter consists essentially of 33.3% titanium, 33.3% zirconium, and 33.3% tantalum, in terms of atomic percentages of the getter.

20. The method of claim 3 , wherein titanium is from about 10% to 40%, and the zirconium is from about 10% to 40%, in terms of atomic percentages of the getter.

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Liang Chin-Wei
• Tsai Cheng-Yuan
• Cheng Chun-Wen
• Tsai Chia-Shiung

Classifications

• B01J20/02 Primary

  comprising inorganic material · CPC title

• C22C16/00

  Alloys based on zirconium · CPC title

• C22C30/00

  Alloys containing less than 50% by weight of each constituent · CPC title

• B81B7/0038

  using materials for controlling the level of pressure, contaminants or moisture inside of the package, e.g. getters · CPC title

• C22C14/00

  Alloys based on titanium · CPC title