Materials, electronic systems and modes for active and passive transience

Patent metadata

Field	Value
Publication number	US-10154592-B2
Application number	US-201414251259-A
Country	US
Kind code	B2
Filing date	Apr 11, 2014
Priority date	Apr 12, 2013
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

The invention provides transient devices, including active and passive devices that electrically and/or physically transform upon application of at least one internal and/or external stimulus. Materials, modeling tools, manufacturing approaches, device designs and system level embodiments of transient electronics are provided.

First claim

We claim:

1. A transient electronic device comprising:
a substrate; and
one or more active or passive electronic device components supported by said substrate, wherein said one or more active or passive electronic device components independently comprise a selectively transformable material;
wherein at least partial transformation of said one or more active or passive electronic device components provides a programmable transformation of the transient electronic device in response to an external or internal stimulus and at a pre-selected time or at a pre-selected rate, wherein said programmable transformation provides a change in function of the transient electronic device from a first condition to a second condition;
wherein said one or more active or passive electronic device components are independently characterized by an electrical dissolution rate (EDR) higher than a corrosion rate of said selectively transformable material, and wherein said EDR is selected to provide a pre-selected transience profile in response to said external or internal stimulus.

2. The device of claim 1 , wherein said one or more active or passive electronic device components comprise one or more inorganic semiconductor components, one or more metallic conductor components or one or more inorganic semiconductor components and one or more metallic conductor components.

3. The device of claim 2 , wherein the one or more metallic conductor components are individually selected from Mg, Mg alloy and Zn, and the EDR is selected from the range of 0.5-3 μm/hour.

4. The device of claim 2 , wherein the one or more metallic conductor components are individually selected from W, Mo and Fe, and the EDR is selected from the range of 10 −4 -0.02 μm/hour.

5. The device of claim 2 , wherein said EDR of said active or passive electronic device components is dependent upon a deposition technique for forming said one or more inorganic semiconductor components or said one or more metallic conductor components, wherein said deposition technique is selected from the group consisting of physical vapor deposition, chemical vapor deposition, sputtering, epitaxial growth, atomic layer deposition, electrochemical deposition, molecular beam epitaxy, pulsed laser deposition, and metal-organic vapor phase epitaxy.

6. The device of claim 2 , wherein said one or more metallic conductor components independently comprises Mg, Zn, W, Mo or an alloy thereof.

7. The device of claim 2 , wherein said one or more metallic conductor components independently comprises an alloy of Mg with one or more additional materials selected from the group consisting of Al, Ag, Ca, Li, Mn, Si, Sn, Y, Zn, and Zr, wherein said one or more additional materials of said alloy has a concentration equal to or less than 10% by weight.

8. The device of claim 2 , wherein said one or more inorganic semiconductor components or said one or more metallic conductor components independently comprises one or more thin film structures, wherein said one or more inorganic semiconductor components or said one or more metallic conductor components each independently has a thickness selected from the range of 1 nm to 100 μm.

9. The device of claim 2 , wherein each of said one or more inorganic semiconductor components independently comprises Si, Ga, GaAs, ZnO or any combination of these.

10. The device of claim 1 , wherein the EDR of said active or passive electronic device components is selected from the range of 0.1 nm/day to 10 μm/s.

11. The device of claim 1 , wherein the EDR of said active or passive electronic device components is selected from the range of 0.01 nm/day to 100 μm/s.

12. The device of claim 1 , wherein the EDR of said active or passive electronic device components is at least 10 times higher than the corrosion rate of said selectively transformable material.

13. The device of claim 1 , wherein the EDR of said active or passive electronic device components is at least 2 times higher than the rate of change in thickness.

14. The device of claim 1 , wherein one or more of said active or passive electronic device components has a pre-transformation density selected from the range of 0.1 g/cm 3 to 25 g/cm 3 , a pre-transformation porosity selected from the range of 0.01% to 99.9%, a pre-transformation degree of crystallinity selected from the range of 0.01% to 99.9%, or a pre-transformation dopant concentration selected from the range of 10 10 /cm 3 to 10 25 /cm 3 .

15. The device of claim 1 , wherein said pre-selected transience profile is characterized by (i) a decrease in average thickness of said active or passive electronic device components at a rate selected over the range of 0.01 nm/day to 100 microns s −1 , (ii) a decrease in electrical conductivity of said one or more inorganic semiconductor components or said one or more metallic conductor components at a rate selected over the range of 10 10 S·m −1 s −1 to 1 S·m −1 s −1 , (iii) a change in morphology of said one or more inorganic semiconductor components or said one or more metallic conductor components, said change in morphology selected from the group consisting of pitting, flaking, cracking and uniform degradation, (iv) a decrease in density of said one or more inorganic semiconductor components or said one or more metallic conductor components at a rate selected over the range of 0.001%/day to 100%/ms, or (v) an increase in porosity of said one or more inorganic semiconductor components or said one or more metallic conductor components at a rate selected over the range of 0.001%/day to 100%/ms.

16. The device of claim 1 , wherein said substrate independently comprises a selectively transformable material.

17. The device of claim 1 , further comprising one or more dielectric components supported by said substrate, wherein said one or more dielectric components independently comprise a selectively transformable material.

18. The device of claim 17 , wherein each of said one or more dielectric components comprises one or more thin film structures, wherein each of said one or more dielectric components has a thickness selected from the range of 1 nm to 1000 μm.

19. The device of claim 17 , wherein said one or more dielectric components comprise one or more materials selected from the group consisting of Si, SiO 2 , MgO, silk, collagen, gelatin, PVA and PLGA.

20. The device of claim 1 , further comprising an encapsulating material at least partially encapsulating one or more of said active or passive electronic device components, wherein said encapsulating material independently comprises a selectively transformable material that is at least partially removed in response to said external or internal stimulus to expose underlying active or passive electronic device components.

21. The device of claim 20 , wherein said encapsulating material comprises a material selected from the group consisting of MgO, silk, collagen, gelatin, PLGA, polyvinylalcohol (PVA), PLA, Si, SiO2, polyanhydrides (polyesters), polyhydroxyalkanates (PHAs) and polyphosphates.

22. The device of claim 1 , wherein said transient electronic device is a communication system, a photonic device, a sensor, an optoelectronic device, a biomedical device, a temperature sensor, a photodetector, a photovoltaic device, a strain gauge, an imaging system, a wireless transmitter, an antenna, a battery, an actuator, an energy storage system, a nanoelectromechanical system or a microelectromechanical system.

23. The device of claim 1 , f

Assignees

• Univ Illinois

Inventors

• Rogers John A
• Lee Chi Hwan
• Yin Lan
• Huang Xian
• Leal Cecilia Maria Das Neves Barbosa
• Harburg Daniel Vincent

Classifications

• H10P50/287

  by chemical means · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/69215

  the material being a silicon oxide, e.g. SiO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title