Semiconductor device and mounting structure of semiconductor device

Patent metadata

Field	Value
Publication number	US-10153424-B2
Application number	US-201715671925-A
Country	US
Kind code	B2
Filing date	Aug 8, 2017
Priority date	Aug 22, 2016
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor element, a plurality of terminals, and a sealing resin. The semiconductor element has a front surface and a back surface. The front surface and the back surface face in opposite directions to each other in a thickness direction of the semiconductor element. The plurality of terminals are disposed at a distance from the semiconductor element and are electrically connected to the front surface. The sealing resin has a first surface facing in a same direction as the direction in which the front surface faces. Each of the plurality of terminals has a main surface exposed from the first surface.

First claim

What is claimed is:

1. A semiconductor device comprising:
a semiconductor element that has a front surface and a back surface, the front surface and the back surface facing in opposite directions to each other in a thickness direction of the semiconductor element;
a plurality of terminals that are disposed at a distance from the semiconductor element and are electrically connected to the front surface; and
a sealing resin that has a first surface facing in a same direction as the direction in which the front surface faces, each of the plurality of terminals having a main surface and a bottom surface that face in opposite directions to each other, the main surface being exposed from the first surface,
wherein one of the terminals includes a surface that is connected to the main surface and the bottom surface, that faces the sealing resin, and that includes a curved portion.

2. The semiconductor device according to claim 1 ,
wherein the main surface is flush with the first surface.

3. The semiconductor device according to claim 1 ,
wherein one of the plurality of terminals includes a main surface conductive layer covering the main surface.

4. The semiconductor device according to claim 3 , further comprising:
a heat dissipation layer that contacts the back surface,
wherein the sealing resin has a second surface that faces in an opposite direction to the direction in which the first surface faces, and
the heat dissipation layer is exposed from the second surface.

5. The semiconductor device according to claim 4 ,
wherein the heat dissipation layer has electrical conductivity.

6. The semiconductor device according to claim 4 ,
wherein the heat dissipation layer and the semiconductor element each have a periphery, and
the periphery of the heat dissipation layer has a section located inside the periphery of the semiconductor element, when viewed in the thickness direction of the semiconductor element.

7. The semiconductor device according to claim 4 ,
wherein the heat dissipation layer has an exposed surface exposed from the sealing resin, the exposed surface being flush with the second surface.

8. A semiconductor device comprising:
a semiconductor element that has a front surface and a back surface, the front surface and the back surface facing in opposite directions to each other in a thickness direction of the semiconductor element;
a plurality of terminals that are disposed at a distance from the semiconductor element and are electrically connected to the front surface; and
a sealing resin that has a first surface facing in a same direction as the direction in which the front surface faces, each of the plurality of terminals having a main surface exposed from the first surface,
wherein one of the plurality of terminals includes a main surface conductive layer covering the main surface,
the semiconductor device further comprises a heat dissipation layer that contacts the back surface,
the sealing resin has a second surface that faces in an opposite direction to the direction in which the first surface faces,
the heat dissipation layer is exposed from the second surface,
one of the plurality of terminals has a first side surface and a second side surface, the first side surface facing an outside of the semiconductor device in a first direction orthogonal to the thickness direction of the semiconductor element, and the second side surface facing the outside in a second direction orthogonal to both the thickness direction of the semiconductor element and the first direction,
the sealing resin has a third surface facing in the first direction and a fourth surface facing in the second direction,
the first side surface is flush with the third surface, and
the second side surface is flush with the fourth surface.

9. The semiconductor device according to claim 8 ,
wherein each of the plurality of terminals has a base part and a projecting part, the base part having a bottom surface facing in a same direction as the back surface, and the projecting part projecting from the base part toward the first surface and having the main surface.

10. The semiconductor device according to claim 9 ,
wherein one of the plurality of terminals is provided with a recessed part, the recessed part being recessed from both the bottom surface and the second side surface, and passing through the one of the plurality of terminals in the first direction, and
the sealing resin opposes the recessed part.

11. The semiconductor device according to claim 9 ,
wherein the projecting part has a first curved surface, the first curved surface being at a distance from the second side surface in the second direction and intersecting the main surface, and
the base part has a second curved surface, the second curved surface being at a distance from the second side surface in the second direction, and connected to the first curved surface.

12. The semiconductor device according to claim 11 ,
wherein the first curved surface and the second curved surface are continuously connected to each other, and
one of the plurality of terminals includes a point of inflection located at a boundary between the first curved surface and the second curved surface that intersect the first side surface.

13. The semiconductor device according to claim 12 , further comprising a wire that electrically connects the front surface and the first curved surface to each other.

14. The semiconductor device according to claim 13 ,
wherein one of the plurality of terminals includes an internal conductive layer covering the first curved surface and the second curved surface.

15. The semiconductor device according to claim 9 , further comprising an insulation film that contacts the second surface and has insulating properties,
wherein the bottom surface of the base parts and the exposed surface of the heat dissipation layer are covered by the insulation film.

16. The semiconductor device according to claim 15 ,
wherein one of the plurality of terminals includes an external conductive layer that covers the first side surface, the second side surface, and the main surface conductive layer.

17. The semiconductor device according to claim 16 ,
wherein the external conductive layer includes an alloy containing Sn.

18. The semiconductor device according to claim 9 ,
wherein the semiconductor element is a Hall element,
both the first side surface and the second side surface contact a corner where the first direction and the second direction intersect, when viewed in the thickness direction of the semiconductor element.

19. A mounting structure of a semiconductor device, comprising:
the semiconductor device according to claim 16 ;
a wiring board on which the semiconductor device is mounted; and
a conductive joining layer that joins the semiconductor device to the wiring board,
wherein the insulation film opposes the wiring board, and the conductive joining layer contacts the external conductive layer.

20. A mounting structure of a semiconductor device, comprising:
the semiconductor device according to claim 18 ,
a wiring board on which the semiconductor device is mounted; and
a conductive joining layer that joins the semiconductor device to the wiring board,
wherein the first surface opposes the wiring board, and the conductive joining layer contacts the external conductive layer.

21. A semiconductor device comprising:
a semiconductor element;
a first electrical conductor spaced apart from the semiconducto

Assignees

• Rohm Co Ltd

Inventors

• Mizuta Shinsei
• Kigoshi Satohiro
• Masaki Takaaki

Classifications

• H10P72/7436

  used to support a device or a wafer when forming electrical connections thereto · CPC title

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10W76/167

  the container walls comprising an aperture, e.g. for pressure control · CPC title

• H10W76/10

  Containers or parts thereof · CPC title

• H10W74/00

  Encapsulations, e.g. protective coatings · CPC title