Laterally adjustable return path magnet assembly and methods

Patent metadata

Field	Value
Publication number	US-10151023-B2
Application number	US-201615193507-A
Country	US
Kind code	B2
Filing date	Jun 27, 2016
Priority date	Jun 27, 2016
Publication date	Dec 11, 2018
Grant date	Dec 11, 2018

Abstract

The invention provides a sputter deposition assembly that includes a sputtering chamber, a sputtering target, and a magnet assembly. The magnet assembly includes a two-part magnetic backing plate that includes first and second plate segments, of which at least one is laterally adjustable. Also provided are methods of operating the sputter deposition assembly.

First claim

What is claimed is:

1. A sputter deposition assembly comprising a sputtering chamber, a sputtering target, and a magnet assembly, the magnet assembly being mounted adjacent to a rear surface of the sputtering target, the magnet assembly comprising a magnetic backing plate and spaced-apart first and second permanent magnets, the first and second permanent magnets being mounted in fixed positions relative to the sputtering target, the first and second permanent magnets each having a proximal end and a distal end, the distal end being further from the sputtering target than is the proximal end, the first and second permanent magnets having magnetic field orientations opposite of each other and oriented such that a north pole of the first permanent magnet faces toward the sputtering target, whereas a north pole of the second permanent magnet faces away from the sputtering target, the magnet assembly creating a magnetic field comprising field lines that extend from the proximal end of the first permanent magnet, through the sputtering target, along an arc located in front of the sputtering target, back through the sputtering target, into the proximal end of the second permanent magnet, through the second permanent magnet, along a return path, and to the distal end of the first permanent magnet, the return path passing through the magnetic backing plate of the magnet assembly, the magnetic backing plate comprising two tapered wedge plates, the two tapered wedge plates being movable selectively toward or away from each other, such that when the two tapered wedge plates move toward each other a composite thickness of the magnetic backing plate increases, whereas when the two tapered wedge plates move away from each other the composite thickness of the magnetic backing plate decreases.

2. The sputter deposition assembly of claim 1 wherein the sputter deposition assembly is configured such that a component of the magnetic field parallel to an adjacent front surface of the sputtering target changes in strength in response to movement of the two tapered wedge plates selectively toward or away from each other.

3. The sputter deposition assembly of claim 1 wherein neither of the two tapered wedge plates is a permanent magnet, the two tapered wedge plates each being formed of ferromagnetic or ferrimagnetic material.

4. The sputter deposition assembly of claim 1 wherein each of the two tapered wedge plates has a slanted camming surface, the two tapered wedge plates being carried alongside each other such that the two slanted camming surfaces slide against each other in response to the two tapered wedge plates moving toward or away from each other.

5. The sputter deposition assembly of claim 1 wherein the two tapered wedge plates have substantially the same width, and each of the tapered wedge plates has opposed first and second side ends, the magnetic backing plate having first and second configurations, the first configuration characterized by the two tapered wedge plates being carried alongside each other such that the first side ends of the two tapered wedge plates are substantially flush with each other while the second side ends of the two tapered wedge plates are substantially flush with each other, the second configuration characterized by the two tapered wedge plates being carried alongside each other such that the first side ends of the two tapered wedge plates are spaced apart from each other while the second side ends of the two tapered wedge plates are spaced apart from each other, the composite thickness of the magnetic backing plate being greater when in the first configuration than when in the second configuration.

6. The sputter deposition assembly of claim 1 wherein the magnet assembly is mounted adjacent to the rear surface of the sputtering target such that one of the two tapered wedge plates is movable laterally relative to the other of the two tapered wedge plates.

7. The sputter deposition assembly of claim 1 wherein a first of the two tapered wedge plates is mounted in a fixed position relative to the two permanent magnets whereas a second of the two tapered plates is mounted so as to be movable selectively toward or away from said first tapered wedge plate, said first tapered wedge plate having opposed first and second side end regions, the first side end region of said first tapered wedge plate being mounted against the distal end of the first permanent magnet, the second side end region of said first tapered wedge plate being mounted against the distal end of the second permanent magnet.

8. The sputter deposition assembly of claim 1 further comprising a cooling plate that defines a cooling channel through which water is configured to flow during sputtering, the cooling plate being carried alongside the rear surface of the sputtering target such that the cooling channel is located between the first and second permanent magnets.

9. A sputter deposition assembly comprising a sputtering chamber, a sputtering target, and a magnet assembly, the magnet assembly being mounted adjacent to a rear surface of the sputtering target, the magnet assembly comprising a magnetic backing plate and spaced-apart first and second permanent magnets, the first and second permanent magnets each having a proximal end and a distal end, the distal end being further from the sputtering target than is the proximal end, the magnet assembly creating a magnetic field comprising field lines that extend from the proximal end of the first permanent magnet, through the sputtering target, along an arc located in front of the sputtering target, back through the sputtering target, into the proximal end of the second permanent magnet, through the second permanent magnet, along a return path, and to the distal end of the first permanent magnet, the return path passing through the magnetic backing plate of the magnet assembly, the magnetic backing plate comprising first and second plate segments, the first plate segment having a first channel, the second plate segment having a first tongue, the first and second plate segments being moveable selectively toward or away from each other such that the first tongue moves further into the first channel in response to movement of the first and second plate segments toward each other whereas the first tongue retracts away from the first channel in response to movement of the first and second plate segments away from each other, one or both of the first and second plate segments being movable in a direction parallel to the sputtering target, the first and second permanent magnets being mounted in fixed positions relative to the sputtering target.

10. The sputter deposition assembly of claim 9 wherein the sputter deposition assembly is configured such that a component of the magnetic field parallel to an adjacent front surface of the sputtering target changes in strength in response to movement of the first and second plate segments selectively toward or away from each other.

11. The sputter deposition assembly of claim 9 wherein neither of the first and second plate segments is a permanent magnet, the first and second plate segments each being formed of ferromagnetic or ferrimagnetic material.

12. The sputter deposition assembly of claim 9 wherein the first plate segment is mounted in a fixed position relative to the two permanent magnets, whereas the second plate segment is mounted so as to be movable selectively toward or away from the first plate segment.

13. The sputter deposition assembly of claim 9 wherein the first tongue has a leading end and a base end, the first tongue having a tapered configuration such that it becomes increasingly narrow in moving from the b

Assignees

• Cardinal Cg Co

Inventors

• Hartig Klaus H W

Classifications

• H01J37/3435

  Target holders (includes backing plates and endblocks) · CPC title

• H01J37/3455

  Movable magnets · CPC title

• C23C14/351

  using a magnetic field in close vicinity to the substrate · CPC title

• H01J37/3405

  Magnetron sputtering · CPC title

• C23C14/35

  by application of a magnetic field, e.g. magnetron sputtering {(C23C14/3457 takes precedence)} · CPC title