On-chip capacitors with floating islands

US10147783B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10147783-B2
Application numberUS-201715463465-A
CountryUS
Kind codeB2
Filing dateMar 20, 2017
Priority dateMar 20, 2017
Publication dateDec 4, 2018
Grant dateDec 4, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Structures for an on-chip capacitor and methods of forming an on-chip capacitor. A metal terminal is formed that has a side edge. Metal fingers are formed that have a parallel arrangement. Floating islands comprised of a metal are formed and are electrically isolated from the metal fingers. Each of the metal fingers has an end and extends from the side edge of the metal terminal toward the end. Each of the floating islands is arranged in a spaced relationship with the end of a respective one of the metal fingers.

First claim

Opening claim text (preview).

What is claimed is: 1. A structure for a capacitor, the structure comprising: a dielectric layer; a first metal terminal having a side edge; a second metal terminal having a side edge; a first plurality of metal fingers having a parallel arrangement between the side edge of the first terminal and the side edge of the second terminal, each of the first plurality of metal fingers having an end and extending from the side edge of the first metal terminal toward the side edge of the second metal terminal; a second plurality of metal fingers having a parallel arrangement between the side edge of the first terminal and the side edge of the second terminal, the second plurality of metal fingers interdigitated with the first plurality of metal fingers in a comb arrangement, and each of the second plurality of metal fingers extending from the side edge of the second metal terminal toward the side edge of the first metal terminal; and a first plurality of floating islands each comprised of metal and electrically isolated by the dielectric layer from the first plurality of metal fingers, the first metal terminal, and the second metal terminal, each of the first plurality of floating islands arranged between the end of a respective one of the first plurality of metal fingers and the side edge of the second metal terminal. 2. The structure of claim 1 wherein each of the second plurality of metal fingers has an end, and further comprising: a second plurality of floating islands each comprised of metal and electrically isolated from the second plurality of metal fingers, each of the second plurality of floating islands arranged in a spaced relationship with the end of a respective one of the second plurality of metal fingers. 3. The structure of claim 2 wherein each of the second plurality of floating islands is arranged between the end of a respective one of the second plurality of metal fingers and the side edge of the first metal terminal. 4. The structure of claim 1 wherein the first plurality of metal fingers and the second plurality of metal fingers have a side-to-side arrangement with a first spacing, and the first plurality of floating islands are spaced from the side edge of the second metal terminal with the first spacing. 5. The structure of claim 4 further comprising: a second plurality of floating islands each comprised of metal and electrically isolated from the second plurality of metal fingers, wherein the second plurality of floating islands are spaced from the side edge of the first metal terminal with the first spacing. 6. The structure of claim 5 wherein the first plurality of floating islands are spaced from the respective ends of the first metal fingers with a second spacing greater than the first spacing, and the second plurality of floating islands are spaced from the respective ends of the second metal fingers with the second spacing. 7. The structure of claim 4 wherein the first plurality of floating islands are spaced from the respective ends of the first metal fingers with a second spacing greater than the first spacing. 8. The structure of claim 1 wherein the first plurality of metal fingers, the second plurality of metal fingers, the first terminal, and the second terminal are arranged in the same metallization level. 9. A method of forming a structure for a capacitor, the method comprising: forming a first metal terminal having a side edge; forming a second metal terminal having a side edge; forming a first plurality of metal fingers having a parallel arrangement between the side edge of the first terminal and the side edge of the second terminal; forming a second plurality of metal fingers having a parallel arrangement between the side edge of the first terminal and the side edge of the second terminal; and forming a first plurality of floating islands each comprised of metal and electrically isolated by a dielectric layer from the first plurality of metal fingers, the first metal terminal, and the second metal terminal, wherein each of the first plurality of metal fingers has an end and extends from the side edge of the first metal terminal toward the second metal terminal, the second plurality of metal fingers are interdigitated with the first plurality of metal fingers in a comb arrangement, each of the second plurality of metal fingers extends from the side edge of the second metal terminal toward the side edge of the first metal terminal, and each of the first plurality of floating islands is arranged between the end of a respective one of the first plurality of metal fingers and the side edge of the second metal terminal. 10. The method of claim 9 wherein forming the first plurality of floating islands each comprised of metal and electrically isolated by the dielectric layer from the first plurality of metal fingers, the first metal terminal, and the second metal terminal comprises: forming a hardmask layer on a dielectric layer; forming a plurality of mandrels on the hardmask layer; and cutting the plurality of mandrels to divide each mandrel into a long segment and a short segment, wherein each of the first plurality of metal fingers is formed at the location of the long segment of one of the plurality of mandrels and each of the first plurality of floating islands is formed at the location of the short segment of one of the plurality of mandrels. 11. The method of claim 9 wherein forming the first plurality of floating islands each comprised of metal and electrically isolated by the dielectric layer from the first plurality of metal fingers, the first metal terminal, and the second metal terminal comprises: forming a hardmask layer on a dielectric layer; forming a plurality of mandrels on the hardmask layer; removing the hardmask at selected locations between the mandrels to define cuts in the hardmask; and forming sidewall spacers adjacent to the mandrels, wherein the sidewall spacers on adjacent mandrels are separated by a section of the hardmask divided by one of the cuts into a long segment and a short segment, each of the first plurality of metal fingers is formed at the location of the long segment of one of the plurality of sections of the hardmask and each of the first plurality of floating islands is formed at the location of the short segment of one of the plurality of mandrels. 12. The method of claim 9 wherein each of the second plurality of metal fingers has an end, and further comprising: forming a second plurality of floating islands each comprised of metal and electrically isolated from the second plurality of metal fingers, each of the second plurality of floating islands arranged in a spaced relationship with the end of a respective one of the second plurality of metal fingers. 13. The method of claim 9 wherein each of the second plurality of floating islands is arranged between the end of a respective one of the second plurality of metal fingers and the side edge of the first metal terminal. 14. The method of claim 9 wherein the first plurality of metal fingers and the second plurality of metal fingers have a side-to-side arrangement with a first spacing, and the first plurality of floating islands are spaced from the side edge of the second metal terminal with the first spacing. 15. The method of claim 14 wherein the first plurality of floating islands are spaced from the respective ends of the first metal fingers with a second spacing greater than the first spacing. 16. The method of claim 9 wherein the first plurality of metal fingers, the second plurality of metal fingers, the first terminal, and the second t

Assignees

Inventors

Classifications

  • Packaging processes not covered by the other groups of this subclass · CPC title

  • H10W72/50Primary

    Bond wires · CPC title

  • H01L28/88Primary

    Electricity · mapped topic

  • having horizontal extensions · CPC title

  • H10D1/043Primary

    using patterning processes to form electrode extensions, e.g. etching · CPC title

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What does patent US10147783B2 cover?
Structures for an on-chip capacitor and methods of forming an on-chip capacitor. A metal terminal is formed that has a side edge. Metal fingers are formed that have a parallel arrangement. Floating islands comprised of a metal are formed and are electrically isolated from the metal fingers. Each of the metal fingers has an end and extends from the side edge of the metal terminal toward the end.…
Who is the assignee on this patent?
Globalfoundries Inc
What technology area does this patent fall under?
Primary CPC classification H10W72/50. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 04 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 2 related publications on this page (citations in our corpus or others sharing the same primary CPC).