Radio frequency (RF) devices

Patent metadata

Field	Value
Publication number	US-10147698-B2
Application number	US-201715717456-A
Country	US
Kind code	B2
Filing date	Sep 27, 2017
Priority date	Sep 29, 2014
Publication date	Dec 4, 2018
Grant date	Dec 4, 2018

Abstract

A packaged RF device is provided that utilizes flexible circuit leads. The RF device includes at least one integrated circuit (IC) die configured to implement the RF device. The IC die is contained inside a package. In accordance with the embodiments described herein, a flexible circuit is implemented as a lead. Specifically, the flexible circuit lead is coupled to the at least one IC die inside the package and extends to outside the package, the flexible circuit lead thus providing an electrical connection to the at least one IC die inside the package.

First claim

What is claimed is:

1. A radio-frequency (RF) device comprising:
an integrated circuit (IC) die, the IC die including at least one RF amplifier to implement the RF device;
a package containing the IC die; and
a flexible circuit lead coupled to the IC die inside the package, the flexible circuit lead extending from inside the package to outside the package, the flexible circuit lead comprising at least one flexible base layer and at least one conductor, the flexible circuit lead providing an electrical connection to the at least one RF amplifier on the IC die, wherein the at least one conductor forms at least one passive device in a filter, with the filter electrically connected to the RF amplifier inside the package and through the flexible circuit lead.

2. The RF device of claim 1 wherein the at least one passive device formed with the least one conductor comprises a spiral inductor.

3. The RF device of claim 1 wherein the at least one passive device formed with the least one conductor comprises an inductor and a capacitor.

4. The RF device of claim 1 wherein the filter further includes at least one lumped passive element mounted on the flexible circuit lead.

5. The RF device of claim 1 wherein the at least one conductor in the flexible circuit lead further forms a transmission line in the flexible circuit lead such that the transmission line is electrically connected to the RF amplifier, and wherein the transmission line is formed to include a plurality of gaps spaced across the transmission line, the plurality of gaps formed to balance current flow across the transmission line.

6. The RF device of claim 1 wherein the at least one conductor further forms at least part of a distributed impedance matching circuit in the flexible circuit lead such that the distributed impedance matching circuit is electrically connected to the RF amplifier.

7. The RF device of claim 1 wherein the flexible circuit lead is electrically connected to the IC die inside the package with at least one wirebond.

8. The RF device of claim 1 wherein the flexible circuit lead is directly connected to the IC die inside the package.

9. A radio-frequency (RF) device comprising:
an integrated circuit (IC) die, the IC die including at least one RF amplifier to implement the RF device;
a package containing the IC die; and
a flexible circuit lead coupled to the IC die inside the package, the flexible circuit lead extending from inside the package to outside the package, the flexible circuit lead comprising at least one flexible base layer and at least one conductor, the flexible circuit lead providing an electrical connection to the at least one RF amplifier on the IC die wherein the at least one conductor forms at least one passive device in a distributed impedance matching circuit in the flexible circuit lead, with the distributed impedance matching circuit electrically connected to the RF amplifier inside the package and through the flexible circuit lead.

10. The RF device of claim 9 wherein the distributed impedance matching circuit includes a tapered impedance transformer formed in the at least one conductor in the flexible circuit lead.

11. The RF device of claim 9 wherein the at least one passive device formed with the least one conductor comprises a spiral inductor.

12. The RF device of claim 9 wherein the at least one conductor in the flexible circuit lead further forms a filter in the flexible circuit lead such that the filter is electrically connected to the RF amplifier.

13. The RF device of claim 9 wherein the distributed impedance matching circuit further includes at least one lumped passive element mounted on the flexible circuit lead.

14. The RF device of claim 9 wherein the flexible circuit lead is electrically connected to the IC die inside the package with at least one wirebond.

15. The RF device of claim 9 wherein the flexible circuit lead is directly connected to the IC die inside the package.

16. A radio-frequency (RF) device comprising:
an integrated circuit (IC) die, the IC die including at least one RF amplifier to implement the RF device;
a package containing the IC die; and
a flexible circuit lead coupled to the IC die inside the package, the flexible circuit lead extending from inside the package to outside the package, the flexible circuit lead comprising at least one flexible base layer and at least one conductor, the flexible circuit lead providing an electrical connection to the at least one RF amplifier on the IC die wherein the at least one conductor forms at least one spiral inductor, with the at least one spiral inductor electrically connected to the RF amplifier inside the package and through the flexible circuit lead.

17. The RF device of claim 16 wherein the at least one spiral inductor comprises an arrangement of a plurality of spiral inductors formed from the at least one conductor.

18. The RF device of claim 16 further comprising at least one lumped passive element mounted on the flexible circuit lead.

19. The RF device of claim 16 wherein the flexible circuit lead is physically connected to the IC die inside the package.

20. The RF device of claim 16 wherein the flexible circuit lead is electrically connected to the IC die inside the package with at least one wirebond.

Assignees

• Nxp Usa Inc

Inventors

• Viswanathan Lakshminarayan
• Watts Michael

Classifications

• H10W90/765

  between a chip and a laterally-adjacent insulating package substrate, interposer or RDL · CPC title

• H10W90/755

  between a chip and a laterally-adjacent insulating package substrate, interpose or RDL · CPC title

• H10W90/753

  between laterally-adjacent chips · CPC title

• H10W90/736

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title

• H10W90/726

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title