Photosensor substrate

Patent metadata

Field	Value
Publication number	US-10141357-B2
Application number	US-201615565256-A
Country	US
Kind code	B2
Filing date	Apr 5, 2016
Priority date	Apr 10, 2015
Publication date	Nov 27, 2018
Grant date	Nov 27, 2018

Abstract

A photosensor substrate achieves TFT property stabilization and further improvement in sensor performance. The photosensor substrate includes a substrate 7 , a photoelectric transducer 4 , and a transistor 2 . The transistor 2 includes a semiconductor layer 22 , a drain electrode 23 and a source electrode 21 facing each other in a direction parallel to a plane of the substrate with the semiconductor layer 22 interposed therebetween, a gate insulating film 15 covering the semiconductor layer 22 , the drain electrode 23 , and the source electrode 21 , and a gate electrode 24 facing the semiconductor layer 22 with the gate insulating film 15 interposed therebetween. The photoelectric transducer 4 includes a lower electrode 41 connected to the drain electrode 23 via a contact hole CH 1 provided in the gate insulating film 15 , a semiconductor film 42 , and an upper electrode 43.

First claim

The invention claimed is:

1. A photosensor substrate comprising:
a substrate;
a plurality of photoelectric transducers disposed on the substrate; and
transistors connected to the photoelectric transducers, respectively; wherein
the transistors each include
a semiconductor layer supported by the substrate,
a drain electrode and a source electrode facing each other in a direction parallel to a plane of the substrate, with the semiconductor layer interposed therebetween,
a gate insulating film covering the semiconductor layer, the drain electrode, and the source electrode, and
a gate electrode facing the semiconductor layer with the gate insulating film interposed therebetween, and
the photoelectric transducers each include
a lower electrode connected to the drain electrode or the source electrode via a contact hole provided in the gate insulating film,
a semiconductor film in contact with the lower electrode, and
an upper electrode facing the lower electrode with the semiconductor film interposed therebetween,
wherein the gate electrode of the transistor and the lower electrode of the photoelectric transducer are disposed at an identical layer level and made of an identical material.

2. The photosensor substrate according to claim 1 , wherein the semiconductor layer of the transistor has a surface close to the substrate and in contact with an end of the source electrode and an end of the drain electrode.

3. The photosensor substrate according to claim 1 , wherein
the transistor further includes an insulating layer provided on a surface far from the substrate, of the semiconductor layer, and
the insulating layer is in contact with an end of the source electrode and an end of the drain electrode.

4. The photosensor substrate according to claim 1 , further comprising
an interlayer insulating film provided farther from the substrate than the gate insulating film, and covering the gate electrode, wherein
the lower electrode of the photoelectric transducer is provided on a surface far from the substrate, of the interlayer insulating film.

5. The photosensor substrate according to claim 4 , further comprising an extended gate electrode disposed at an identical layer level with the lower electrode and connected to the gate electrode via a contact hole provided in the interlayer insulating film.

6. The photosensor substrate according to claim 4 , wherein the photoelectric transducer extends to face the gate electrode with the interlayer insulating film interposed therebetween.

7. The photosensor substrate according to claim 1 , further comprising a light shielding film provided between the substrate and the transistor.

8. The photosensor substrate according to claim 1 , wherein the semiconductor layer of the transistor includes an oxide semiconductor.

9. The photosensor substrate according to claim 1 , wherein the gate electrode overlaps with an entire portion of the semiconductor layer when viewed along a normal line of the substrate.

Assignees

• Sharp Kk

Inventors

• Miyamoto Tadayoshi

Classifications

• G01T1/241

  Electrode arrangements, e.g. continuous or parallel strips or the like · CPC title

• G01T7/00

  Details of radiation-measuring instruments · CPC title

• H01L27/14616

  Electricity · mapped topic

• H01L31/10

  Electricity · mapped topic

• H01L27/14614 Primary

  Electricity · mapped topic