Vacuum carrier module, method of using and process of making the same

US10137603B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10137603-B2
Application numberUS-201715805752-A
CountryUS
Kind codeB2
Filing dateNov 7, 2017
Priority dateNov 26, 2013
Publication dateNov 27, 2018
Grant dateNov 27, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A vacuum carrier module includes a substrate having at least one hole and an edge region. There is at least one support on a top surface of the substrate. Further, a gel film is adhered to the edge region of the substrate. The at least one hole fluidly connects a reservoir located above the top surface of the substrate. A method of using a vacuum carrier module includes planarizing a gel film by passing an alignment material through a hole in a substrate to contact a first surface of the gel film, positioning at least one chip on a second surface of the gel film opposite the first surface. The method further includes encasing the at least one chip in a molding material and applying a vacuum to the first surface of the gel film.

First claim

Opening claim text (preview).

What is claimed is: 1. A method of using a vacuum carrier module, the method comprising: planarizing a gel film by flowing an alignment material through a hole in a substrate to contact a first surface of the gel film, wherein the gel film is adhered to an edge region of the substrate; positioning at least one chip on a second surface of the gel film opposite the first surface; encasing the at least one chip in a molding material; and after encasing the at least one chip, applying a vacuum to the first surface of the gel film. 2. The method of claim 1 , wherein a plurality of supports physically separates the gel film from the substrate while flowing the alignment material through the hole. 3. The method of claim 2 , wherein applying the vacuum to the first surface of the gel film conforms the gel film along sidewalls of the plurality of supports. 4. The method of claim 1 , wherein planarizing the gel film comprises passing the alignment material through the hole at a pressure less than an adhesive strength between the gel film and the substrate. 5. The method of claim 1 , wherein encasing the at least one chip comprises applying the molding material which is non-reactive with the gel film. 6. The method of claim 1 , further comprising removing the encased at least one chip from the gel film. 7. The method of claim 1 , wherein applying the vacuum to the first surface of the gel film physically separates at least a portion of the gel film from the encased at least one chip. 8. A method comprising: disposing a gel film over a substrate; flowing an alignment material into a reservoir disposed between the gel film and the substrate, wherein flowing the alignment material into the reservoir planarizes a surface of the gel film opposite the substrate; after flowing the alignment material into the reservoir, placing a semiconductor die on the gel film; and packaging the semiconductor die while the semiconductor die is disposed on the gel film. 9. The method of claim 8 , wherein the alignment material comprises compressed dry air (CDA), N 2 , an inert gas, silicone oil, or a combination thereof. 10. The method of claim 8 , wherein flowing the alignment material comprises flowing the alignment material at an upward pressure lower than an adhesive strength between the gel film and the substrate. 11. The method of claim 8 , further comprising increasing an upward pressure exerted by the alignment material in response to placing the semiconductor die on the gel film. 12. The method of claim 8 , wherein packaging the semiconductor die comprises encapsulating the semiconductor die in a molding material. 13. The method of claim 12 , further comprising maintaining a continuous upward pressure exerted by the alignment material from flowing the alignment material into the reservoir through curing the molding material. 14. The method of claim 8 further comprising after packaging the semiconductor die, applying a negative pressure to a surface of the gel film opposite the packaged semiconductor die, wherein applying the negative pressure releases the gel film from the packaged semiconductor die. 15. The method of claim 14 , wherein the gel film is physically supported by a plurality of supports disposed between the substrate and the gel film, and wherein the plurality of supports at least partially prevent the gel film from being pulled into a hole extending through the substrate while applying the negative pressure to the surface of the gel film opposite the packaged semiconductor die. 16. A method comprising: physically supporting a gel film over a substrate using a plurality of supports disposed between the gel film and the substrate; flowing an alignment material into a reservoir between the gel film and the substrate; packaging a semiconductor die on the gel film to form a device package while the alignment material is in the reservoir; and applying a vacuum to remove at least a portion of the alignment material from the reservoir, wherein applying the vacuum reduces a surface area of an interface between the device package and the gel film by conforming the gel film along sidewalls of the plurality of supports. 17. The method of claim 16 , wherein flowing the alignment material into the reservoir planarizes a surface of the gel film opposite the substrate. 18. The method of claim 16 , wherein flowing the alignment material comprises adjusting an upward pressure exerted by the alignment material on the gel film in response to a weight applied to a surface of the gel film opposite the substrate. 19. The method of claim 18 , wherein adjusting the upward pressure exerted by the alignment material comprises increasing the upward pressure exerted by the alignment material in response to placing the semiconductor die on the gel film. 20. The method of claim 18 , wherein the alignment material comprises an inert gas, silicone oil, or a combination thereof, and wherein the gel film comprises silicone or a polymer based compound.

Assignees

Inventors

Classifications

  • batch processes · CPC title

  • Manufacture or treatment · CPC title

  • Intermittently feeding endless articles, e.g. transfer films, to the mould (B29C45/14262 takes precedence) · CPC title

  • connected to or mounted on a carrier, e.g. lead frame · CPC title

  • Perforating lamina · CPC title

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What does patent US10137603B2 cover?
A vacuum carrier module includes a substrate having at least one hole and an edge region. There is at least one support on a top surface of the substrate. Further, a gel film is adhered to the edge region of the substrate. The at least one hole fluidly connects a reservoir located above the top surface of the substrate. A method of using a vacuum carrier module includes planarizing a gel film b…
Who is the assignee on this patent?
Taiwan Semiconductor Mfg Co Ltd
What technology area does this patent fall under?
Primary CPC classification B29C33/3842. Mapped technology areas include Operations & Transport.
When was this patent published?
Publication date Tue Nov 27 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).