Method for treating a semiconductor device

Patent metadata

Field	Value
Publication number	US-10137480-B2
Application number	US-201615387591-A
Country	US
Kind code	B2
Filing date	Dec 21, 2016
Priority date	Mar 26, 2015
Publication date	Nov 27, 2018
Grant date	Nov 27, 2018

Abstract

A method of treating a sensor array including a plurality of sensors and an isolation structure, where a sensor of the plurality of sensors has a sensor pad exposed at a surface of the sensor array and the isolation structure is disposed between the sensor pad and sensor pads of other sensors of the plurality of sensors, comprises exposing the sensor pad and the isolation structure to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier; applying an acid solution including an organic acid and a second non-aqueous carrier to the sensor pad; and rinsing the acid solution from the sensor pad and the isolation structure.

First claim

What is claimed is:

1. A method of treating a sensor array, the sensor array including a plurality of sensors and an isolation structure, a sensor of the plurality of sensors having a sensor pad exposed at a surface of the sensor array, wherein the exposed surface of the sensor pad defines a bottom surface of the isolation structure, the method comprising:
exposing the exposed surface of the sensor pad to a non-aqueous organo-silicon solution including an organo-silicon compound and a first non-aqueous carrier;
applying an acid solution including an organic acid and a second non-aqueous carrier to the exposed surface of the sensor pad; and
rinsing the acid solution from the exposed surface of the sensor pad.

2. The method of claim 1 , wherein a portion of the organo-silicon compound remains on the isolation structure.

3. The method of claim 1 , wherein the organo-silicon compound includes a silane functionalized with an aryl, polyaryl, alkyl, alkoxy, halo, or cyano moiety, or any combination thereof.

4. The method of claim 1 , wherein the organo-silicon compound includes a polysiloxane including aryl, dialkyl or alkylhydro units, or combinations thereof.

5. The method of claim 1 , wherein the organo-silicon compound includes a polysiloxane including hydrophilic, polar, or amphiphilic units, or combinations thereof.

6. The method of claim 1 , wherein the organo-silicon compound includes a silazane.

7. The method of claim 1 , wherein the organo-silicon compound has a molecular weight in a range of 50 Da to 10000 Da.

8. The method of claim 1 , wherein the non-aqueous organo-silicon solution includes the organo-silicon compound in an amount of 0.001% to 10.0% by weight.

9. The method of claim 1 , wherein the organic acid includes sulfonic acid.

10. The method of claim 1 , wherein the first non-aqueous carrier is an alkane having between 6 and 24 carbons.

11. The method of claim 1 , further comprising heating the sensor pad and the non-aqueous organo-silicon solution while exposing the sensor pad to the non-aqueous organo-silicon solution.

12. The method of claim 1 , further comprising exposing at least the sensor pad to a basic solution.

13. The method of claim 3 , wherein the silane is selected from the group consisting of phenyldimethylchlorosilane, tert-butylchlorodiiphenylsilane, chlorotripropylsilane, (N,N-dimethylamino) trimethyl-silane, tris(trimethylsilyl)silane, triethylchlorosilane, 3-cyanopropyldimethylchloro-silane, chlorotriethylsilane, 1,2-bis(chlorodimethylsiyl)ethane, trimethylsilyltrifluoronesulfonate, trioctylsilane, dodecyldimethylchlorosilane, chlorodimethylthexylsilane, trimethylchlorosilane, chloro(chloromethyl) dimethylsilane, thexyldimethylchlorosilane, triisopropylchlorosilane, trimethylmethoxysilane, trimethylchlorosilane, chlorotriisopropylsilane, acetoxytrimethylsilane, and a combination thereof.

14. The method of claim 4 , wherein the aryl unit includes a phenylalkyl siloxyl unit.

15. The method of claim 4 , wherein the dialkyl unit or the alkylhydro unit includes an alkyl moiety selected from methyl, ethyl, propyl, butyl moieties, and a combination thereof.

16. The method of claim 9 , wherein the sulfonic acid includes dodecyl benzene sulfonic acid.

17. The method of claim 12 , wherein the basic solution includes between 0.005M and 1.5M sodium hydroxide.

18. The method of claim 15 , wherein the polysiloxane includes a siloxane selected from the group consisting of an alkyl terminated polydimethylsiloxane, a hydride-terminated polydimethylsiloxane, a monovinyl terminated polydimethylsiloxane, dichloro-tetramethyldisiloxane, hexamethyltrisiloxane, polymethylhydrosiloxane, tris(trimethylsilyloxy)silane, octamethyltrisiloxane, and a combination thereof.

Assignees

• Life Technologies Corp

Inventors

• Ball James A
• Waggoner Phil
• Parker Scott

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• B05D5/12

  to obtain a coating with specific electrical properties · CPC title

• G01N27/4148

  Integrated circuits therefor, e.g. fabricated by CMOS processing · CPC title

• C11D1/22

  derived from aromatic compounds · CPC title

• G01N27/414

  Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS · CPC title