Correlated electron material devices using dopant species diffused from nearby structures

Patent metadata

Field	Value
Publication number	US-10134986-B2
Application number	US-201615201932-A
Country	US
Kind code	B2
Filing date	Jul 5, 2016
Priority date	Jul 5, 2016
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

Subject matter disclosed herein may relate to fabrication of correlated electron materials used, for example, to perform a switching function. In embodiments, a correlated electron material may be doped using dopant species derived from one or more precursors utilized to fabricate nearby structures such as, for example, a conductive substrate or a conductive overlay.

First claim

What is claimed is:

1. A method of constructing a switching device, comprising:
forming a conductive substrate using one or more precursors;
forming a correlated electron material film over the conductive substrate; and
doping the correlated electron material film via diffusing a first dopant species, the first dopant being derived from the one or more precursors, into the correlated electron material film.

2. The method of claim 1 , further comprising annealing the conductive substrate to decompose the one or more precursors to supply the first dopant species.

3. The method of claim 2 , wherein forming the conductive substrate comprises using an atomic layer deposition process, chemical vapor deposition, plasma chemical vapor deposition, sputter deposition, physical vapor deposition, hot wire chemical vapor deposition, laser enhanced chemical vapor deposition, laser enhanced atomic layer deposition, or rapid thermal chemical vapor deposition, or any combination thereof.

4. The method of claim 1 , wherein forming the correlated electron material film over the conductive substrate comprises forming a nickel oxide film.

5. The method of claim 1 , wherein forming the conductive substrate comprises forming a conductive substrate of titanium nitride, tantalum nitride, tungsten nitride, or any combination thereof.

6. The method of claim 1 , wherein the first dopant species comprises carbon, chlorine, nitrogen, fluorine, cyanide (CN), nitrosyl (NO), ammonia (NH3), oxynitride molecules (NxOy, wherein x and y comprise whole numbers, and wherein x>0 and y>0 and at least x or y comprise values >0), or molecules of the form CxHyNz (wherein x>0, y>0, z>0, and wherein at least x, y, or z comprise values >0), or any combination thereof.

7. The method of claim 1 , wherein the first dopant species comprises a material that brings about a P-type correlated electron material film.

8. The method of claim 1 , further comprising forming a conductive overlay over the correlated electron material film.

9. The method of claim 8 , further comprising doping the correlated electron material film by diffusing a second dopant species, the second dopant being derived from one or more precursors used in forming the conductive overlay, into the correlated electron material film.

10. A method of fabricating a switching device, comprising:
forming a correlated electron material film over a conductive substrate;
forming a conductive overlay over the correlated electron material film; and
doping the correlated electron material film with one or more dopant species derived from one or more precursors utilized in formation of the conductive substrate or the conductive overlay, or a combination thereof.

11. The method of claim 10 , wherein the doping comprises annealing the conductive substrate and the conductive overlay to diffuse the one or more dopant species into the correlated electron material film.

12. The method of claim 11 , wherein the annealing comprises diffusing carbon, chlorine, nitrogen, fluorine, cyanide (CN), nitrosyl (NO), ammonia (NH3), oxynitride molecules (NxOy, wherein x and y comprise whole numbers, and wherein x>0 and y>0 and at least x or y comprise values >0), and molecules of the form CxHyNz (wherein x>0, y>0, z>0, and wherein at least x, y, or z comprise values >0), or any combination thereof.

13. The method of claim 10 , wherein the one or more dopant species comprises a material that decreases electrical conductivity of the conductive substrate or the conductive overlay, or a combination thereof.

14. The method of claim 13 , further comprising the one or more dopant species filling oxygen vacancies in an electron back-donating material of the correlated electron material film.

Assignees

• Advanced Risc Mach Ltd
• Advanced Risc Mach Ltd

Inventors

• Reid Kimberly Gay
• Shifren Lucian

Classifications

• H01L45/04

  Electricity · mapped topic

• H01L45/1658

  Electricity · mapped topic

• H01L49/003 Primary

  Electricity · mapped topic

• H01L45/146

  Electricity · mapped topic

• H01L45/16

  Electricity · mapped topic