RF ion source with dynamic volume control

Patent metadata

Field	Value
Publication number	US-10134568-B2
Application number	US-201815863326-A
Country	US
Kind code	B2
Filing date	Jan 5, 2018
Priority date	Nov 2, 2016
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

Provided herein are approaches for dynamically modifying plasma volume in an ion source chamber by positioning an end plate and radio frequency (RF) antenna at a selected axial location. In one approach, an ion source includes a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall, and an RF antenna adjacent a plasma within the plasma chamber, wherein the RF antenna is configured to provide RF energy to the plasma. The ion source may further include an end plate disposed within the plasma chamber, adjacent the first end wall, the end plate actuated along the longitudinal axis between a first position and a second position to adjust a volume of the plasma. By providing an actuable end plate and RF antenna, plasma characteristics may be dynamically controlled to affect ion source characteristics, such as composition of ion species, including metastable neutrals.

First claim

The invention claimed is:

1. An ion source comprising:
a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall; and
an end plate disposed within the plasma chamber, the end plate actuated along the longitudinal axis between a first position and a second position to adjust a volume of a plasma, wherein the end plate includes an internal fluid passageway operable to deliver a gas into the plasma chamber.

2. The ion source of claim 1 , further comprising a radio frequency (RF) energy source operable to provide RF energy to the plasma.

3. The ion source of claim 2 , wherein the RF energy source is an RF antenna, and wherein the RF antenna is disposed adjacent an RF window of the plasma chamber.

4. The ion source of claim 1 , further comprising a voltage source coupled to the end plate.

5. The ion source of claim 1 , the internal fluid passageway comprising a plurality of fluid passageways.

6. The ion source of claim 5 , the internal fluid passageway comprising a central orifice fluidly connected with the plurality of fluid passageways.

7. The ion source of claim 6 , wherein the end plate comprises:
a first section disposed within the plasma chamber, the first section extending to a sidewall of the plasma chamber, wherein the first section contains the plurality of fluid passageways; and
a second section coupled to the first section, the second section extending outside of the plasma chamber, wherein the second section contains the central orifice.

8. The ion source of claim 7 , further comprising an exit aperture formed through a first end wall of the plasma chamber, the exit aperture disposed along the longitudinal axis.

9. The ion source of claim 7 , further comprising a vacuum feedthrough coupling the second section of the end plate to a second end wall of the plasma chamber.

10. A plasma chamber comprising:
a housing comprising a side wall, a first end wall, and a second end wall, wherein the second end wall includes an exit aperture for delivering an ion beam from the plasma chamber; and
an end plate disposed within the plasma chamber, the end plate actuated along a longitudinal axis between a first position and a second position to adjust a volume of a plasma, wherein the end plate includes an internal fluid passageway operable to deliver a gas into the plasma chamber.

11. The plasma chamber of claim 10 , wherein the end plate is electrically coupled to a voltage source.

12. The plasma chamber of claim 10 , further comprising a radio frequency (RF) energy source operable to provide RF energy to the plasma.

13. The plasma chamber claim 12 , wherein the RF antenna is disposed within the end plate.

14. The plasma chamber of claim 10 , the internal fluid passageway comprising:
a plurality of fluid passageways; and
a central orifice fluidly connected with the plurality of fluid passageways.

15. The plasma chamber of claim 14 , wherein the end plate comprises:
a first section disposed within the plasma chamber, the first section having a first surface exposed to plasma within the plasma chamber, a second surface opposite the first surface, the second surface unexposed to the plasma within the plasma chamber, and first and second ends adjacent the side wall of the plasma chamber; and
a second section coupled to the first section, the second section extending outside of the plasma chamber.

16. The plasma chamber of claim 15 , wherein the plurality of fluid passageways is disposed within the first section of the end plate, and wherein the central orifice is disposed within the second section of the end plate.

17. A method for adjusting a volume of plasma within a plasma chamber, the method comprising:
providing a plasma chamber having a longitudinal axis extending between a first end wall and a second end wall;
providing an end plate within the plasma chamber, the end plate actuable along the longitudinal axis between a first position and a second position to adjust a volume of the plasma; and
introducing a gas to the plasma chamber through an internal fluid passageway formed through the end plate.

18. The method of claim 17 , further comprising applying a voltage to the end plate.

19. The method of claim 17 , further comprising actuating the end plate and the RF antenna towards the second end wall to increase a density of the plasma, the second end wall including an exit aperture for delivering an ion beam from the plasma chamber.

20. The method of claim 17 , further comprising:
delivering the gas through a central orifice located within a first section of the end plate; and
delivering the gas from the central orifice to a plurality of fluid passageways located within a second section of the end plate.

Assignees

• Varian Semiconductor Equipment Ass Inc

Inventors

• Koo Bon-Woong
• Hwang Yong-Seok
• Chung Kyong-Jae

Classifications

• H01J37/32412 Primary

  Plasma immersion ion implantation · CPC title

• H01J37/32669

  Particular magnets or magnet arrangements for controlling the discharge · CPC title

• H01J2237/327

  Arrangements for generating the plasma · CPC title

• H01J27/16 Primary

  using high-frequency excitation, e.g. microwave excitation · CPC title

• H01J37/08

  Ion sources; Ion guns · CPC title