Method for determining a process window for a lithographic process, associated apparatuses and a computer program

Patent metadata

Field	Value
Publication number	US-10133191-B2
Application number	US-201515325716-A
Country	US
Kind code	B2
Filing date	Jul 15, 2015
Priority date	Jul 21, 2014
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

A method of determining a process window for a lithographic process, the process window describing a degree of acceptable variation in at least one processing parameter during the lithographic process. The method includes obtaining a set of output parameter values derived from measurements performed at a plurality of locations on a substrate, following pattern transfer to the substrate using a lithographic process, and obtaining a corresponding set of actual processing parameter values that includes an actual value of a processing parameter of the lithographic process during the pattern transfer at each of the plurality of locations. The process window is determined from the output parameter values and the actual processing parameter values. This process window may be used to improve the selection of the processing parameter at which a subsequent lithographic process is performed.

First claim

The invention claimed is:

1. A method of determining a process window for a lithographic process configured to process a portion of a design layout onto a substrate, the method comprising:
determining an output parameter value for each structure of a plurality of structures on the substrate, each output parameter value being associated with a corresponding initial processing parameter value at which the lithographic process is set for producing the structure onto the substrate, the plurality of structures being processed using a range of initial processing parameter values,
determining, for each structure of the plurality of structures, an actual processing parameter value at which the structure is processed, and
determining, by a hardware computer system, the process window by replacing the initial processing parameter value by the actual processing parameter value for each of the associated output parameter values and by determining at which actual processing parameter value the output parameter value meets or crosses a threshold.

2. The method of claim 1 , wherein the output parameter value determined from the structure includes one or more selected from: dimension, critical dimension, sidewall angle, image log-slope, temperature, pattern placement, overlay, resist height and/or defectivity.

3. The method of claim 1 , further comprising:
associating each output parameter value with a corresponding initial further processing parameter value at which the lithographic process is set for producing the structure onto the substrate, the initial further processing parameter value being a different parameter compared to the initial processing parameter value,
determining, for each structure of the plurality of structures, an actual further processing parameter value at which the structure is processed, and
wherein determining the process window further comprises replacing the initial further processing parameter value by the actual further processing parameter value and further comprises determining at which actual further processing parameter value the output parameter value meets or crosses the threshold or a further threshold.

4. The method of claim 3 , wherein the initial processing parameter value and the initial further processing parameter value are independent parameter values of the lithographic process.

5. The method of claim 3 , wherein each structure of the plurality of structures comprises a unique combination of the initial processing parameter value and the initial further processing parameter value.

6. The method of claim 3 , wherein the initial further processing parameter value is a feed forward parameter value set at a lithographic processing tool for performing at least a part of the lithographic process, and wherein the actual further processing parameter value is a measured parameter value comprising an actual measurement performed on the substrate comprising the structures produced using the initial further processing parameter.

7. The method of claim 6 , wherein measurement of the actual further processing parameter value is performed by the lithographic processing tool, or wherein measurement of the actual further processing parameter value is measured by a metrology tool separate from the lithographic processing tool.

8. The method of claim 3 , wherein at least some structure of the plurality of structures comprises a measurement structure for measuring the actual further processing parameter value.

9. The method of claim 3 , wherein the initial further processing parameter value set at the lithographic processing tool for processing the current substrate is calibrated using the actual further processing parameter value measured from the previously processed substrate.

10. The method of claim 1 , wherein the initial processing parameter value is one or more selected from: focus, dose, pattern placement, overlay, radiation bandwidth, radiation wavelength, aberrations and/or system dynamics.

11. The method of claim 1 , wherein the initial processing parameter value is a feed forward parameter value set at a lithographic processing tool for performing at least a part of the lithographic process, and wherein the actual processing parameter value is a measured parameter value comprising an actual measurement performed on the substrate comprising the structures produced using the initial processing parameter.

12. The method of claim 11 , wherein the actual processing parameter value is determined using the actual measurement and/or using logged data resulting from a previous measurement.

13. The method of claim 11 , wherein measurement of the actual processing parameter value is performed by the lithographic processing tool, or wherein measurement of the actual processing parameter value is measured by a metrology tool separate from the lithographic processing tool.

14. The method of claim 11 , wherein the initial processing parameter value at a specific location on the substrate results from interpolation of a neighboring initial processing parameter value, and/or wherein the actual processing parameter at the specific location on the substrate results from interpolation of a neighboring actual processing parameter value.

15. The method of claim 1 , wherein at least some structure of the plurality of structures comprises a measurement structure for measuring the actual processing parameter value.

16. The method of claim 1 , wherein the initial processing parameter value set at the lithographic processing tool for processing a current substrate is calibrated using the actual processing parameter value measured from a previously processed substrate.

17. The method of claim 1 , further comprising:
determining a trend-line through data points associated with combinations of actual processing parameter values and output parameter values,
determining an offset and/or scaling of individual data points or groups of data-points relative to the trend-line, and
correcting the individual data-points or groups of data-points using the determined offset and/or scaling,
wherein the determining the trend-line, the determining the offset and/or scaling and the correcting are iteratively performed until a termination condition is satisfied.

18. A non-transitory computer program product comprising instructions configured to cause a computer to at least:
determine an output parameter value for each structure of a plurality of structures on a substrate, each output parameter value being associated with a corresponding initial processing parameter value at which a lithographic process is set for producing the structure onto the substrate, the plurality of structures being processed using a range of initial processing parameter values,
determine, for each structure of the plurality of structures, an actual processing parameter value at which the structure is processed, and
determine a process window for the lithographic process by replacing the initial processing parameter value by the actual processing parameter value for each of the associated output parameter values and by determining at which actual processing parameter value the output parameter value meets or crosses a threshold.

19. A method of calibrating a lithographic model configured to simulate at least a part of a lithographic process for processing a portion of a design layout onto a substrate, the method comprising:
determining an output parameter value for each structure of a plurality of structures on a test substrate, the test substrate being processed using the lithographic

Assignees

• Asml Netherlands Bv

Inventors

• Tel Wim Tjibbo
• Staals Frank
• Hinnen Paul Christiaan
• Jungblut Reiner Maria

Classifications

• G03F7/70641

  Focus · CPC title

• G03F7/705

  Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions · CPC title

• G03F7/70516 Primary

  Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors · CPC title

• G03F7/70633

  Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching · CPC title

• G03F7/70625

  Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness · CPC title