Method and system for providing a target design displaying high sensitivity to scanner focus change

Patent metadata

Field	Value
Publication number	US-9454072-B2
Application number	US-201314074412-A
Country	US
Kind code	B2
Filing date	Nov 7, 2013
Priority date	Nov 9, 2012
Publication date	Sep 27, 2016
Grant date	Sep 27, 2016

Abstract

A segmented mask includes a set of cell structures, wherein each cell structure includes a set of features having an unresolvable segmentation pitch along a first direction, wherein the unresolvable segmentation pitch along the first direction is smaller than the illumination of the lithography printing tool, wherein the plurality of cell structures have a pitch along a second direction perpendicular to the first direction, wherein the unresolvable segmentation pitch is suitable for generating a printed pattern for shifting the best focus position of the lithography tool by a selected amount to achieve a selected level of focus sensitivity.

First claim

What is claimed:

1. A lithography mask for producing printed patterns for causing a shift in best focus position of a lithography printing tool comprising:
a plurality of cell structures formed from a substantially opaque material, wherein each cell structure includes a set of features having an unresolvable segmentation pitch along a first direction, wherein the unresolvable segmentation pitch along the first direction is smaller than a minimal design rule pitch, wherein the plurality of cell structures have a pitch along a second direction perpendicular to the first direction, wherein the unresolvable segmentation pitch is suitable for generating a printed pattern for shifting the best focus position of the lithography tool by a selected amount to achieve a selected level of focus sensitivity.

2. The lithography mask of claim 1 , wherein the substantially opaque material includes chrome.

3. The lithography mask of claim 1 , wherein the plurality of cell structures includes a first cell structure and at least a second cell structure, wherein the first cell structure includes a set of features having a first segmentation pitch, wherein the second cell structure includes a set of features having a second segmentation pitch different than the first segmentation pitch.

4. The lithography mask of claim 1 , wherein the plurality of cell structures is configured to form a local focus-exposure matrix on a production wafer.

5. The lithography mask of claim 1 , wherein at least some of the plurality of cell structures include a symmetric assist feature.

6. The lithography mask of claim 1 , wherein at least some of the plurality of cell structures include an asymmetric assist feature.

7. A lithography mask for producing printed patterns for causing a shift in best focus position of a lithography printing tool comprising:
a first one-dimensional structure formed from a first set of sub-structures having a first pitch along a first direction; and
at least one additional one-dimensional structure formed from an additional set of sub-structures having a second pitch along the first direction, wherein the first one-dimensional structure is periodic along a second direction perpendicular to the first direction with a third pitch, wherein the at least one additional one-dimensional structure is periodic along the second direction perpendicular to the first direction with a fourth pitch, wherein at least one of the first pitch, the second pitch, the third pitch and the fourth pitch is unresolvable by illumination of the lithography printing tool.

8. The lithography mask of claim 7 , wherein the first one-dimensional structure and the at least one additional one-dimensional structure for a symmetric structure.

9. The lithography mask of claim 7 , wherein the first one-dimensional structure and the at least one additional one-dimensional structure for an asymmetric structure.

10. A lithography printing tool for printing patterns comprising:
a radiation source;
a mask support device configured to secure a segmented mask, wherein the segmented mask includes a plurality of cell structures formed from a substantially opaque material, wherein each cell structure includes a set of features having an unresolvable segmentation pitch, wherein the unresolvable segmentation pitch along a first direction is smaller than the wavelength of illumination of the lithography printing tool, wherein the plurality of cell structures have a pitch along a second direction perpendicular to the first direction, wherein the unresolvable segmentation pitch is suitable for generating a printed pattern for shifting the best focus position of the lithography tool by a selected amount to achieve a selected level of focus sensitivity; and
a set of projection optics configured to direct illumination transmitted by the mask onto a wafer.

11. The lithography printing tool of claim 10 , wherein the unresolvable segmentation pitch along the first direction is smaller than a minimal design rule pitch.

12. The lithography printing tool of claim 10 , wherein the substantially opaque material includes chrome.

13. The lithography tool of claim 10 , wherein the plurality of cell structures includes a first cell structure and at least a second cell structure, wherein the first cell structure includes a set of features having a first segmentation pitch, wherein the second cell structure includes a set of features having a second segmentation pitch different than the first segmentation pitch.

14. The lithography printing tool of claim 10 , wherein the plurality of cell structures is configured to form a local focus-exposure matrix on a production wafer.

15. The lithography printing tool of claim 10 , wherein at least some of the plurality of cell structures include a symmetric assist feature.

16. The lithography printing tool of claim 10 , wherein at least some of the plurality of cell structures include an asymmetric assist feature.

17. The lithography printing tool of claim 10 , wherein the radiation source comprises:
a light source configured to emit at least one of ultraviolet light, extreme ultraviolet light or deep ultraviolet light.

18. A lithography printing tool for printing patterns comprising:
a radiation source;
a mask support device configured to secure a segmented mask, wherein the segmented mask includes a first one-dimensional structure formed from a first set of sub-structures having a first pitch along a first direction; and at least one additional one-dimensional structure formed from an additional set of sub-structures having a second pitch along the first direction, wherein the first one-dimensional structure is periodic along a second direction perpendicular to the first direction with a third pitch, wherein the at least one additional one-dimensional structure is periodic along the second direction perpendicular to the first direction with a fourth pitch, wherein at least one of the first pitch, the second pitch, the third pitch and the fourth pitch is unresolvable by illumination of the lithography printing tool; and
a set of projection optics configured to direct illumination transmitted by the mask onto a wafer.

19. The lithography printing tool of claim 18 , wherein the first one-dimensional structure and the at least one additional one-dimensional structure form a symmetric structure.

20. The lithography printing tool of claim 18 , wherein the first one-dimensional structure and the at least one additional one-dimensional structure form an asymmetric structure.

21. The lithography printing tool of claim 18 , wherein the radiation source comprises:
a light source configured to emit at least one of ultraviolet light, extreme ultraviolet light or deep ultraviolet light.

Assignees

• Kla Tencor Corp

Inventors

• Levinski Vladimir
• Feler Yoel
• Kandel Daniel

Classifications

• G01B11/14

  for measuring distance or clearance between spaced objects or spaced apertures (G01B11/26 takes precedence; rangefinders G01C3/00) · CPC title

• G03F7/70641

  Focus · CPC title

• G03F1/70

  Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging · CPC title

• G03F7/70683

  Mark designs · CPC title

• G03F1/38 Primary

  Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof · CPC title