Stacked vias for vertical integration

Patent metadata

Field	Value
Publication number	US-10131534-B2
Application number	US-201113278080-A
Country	US
Kind code	B2
Filing date	Oct 20, 2011
Priority date	Oct 20, 2011
Publication date	Nov 20, 2018
Grant date	Nov 20, 2018

Abstract

This disclosure provides systems, methods and apparatus for a via structure. In one aspect, an apparatus includes a substrate and a first electromechanical systems device on a surface of the substrate. The first electromechanical systems device includes a first metal layer and a second metal layer. A first via structure can be included on the surface of the substrate. The first via structure includes the first metal layer, the second metal layer, and a third metal layer. The first metal layer of the first electromechanical systems device may be the same metal layer as the first metal layer of the first via structure.

First claim

What is claimed is:

1. An apparatus comprising:
a substrate;
a first electromechanical systems (EMS) device, the first EMS device including a first metal layer and a second metal layer;
a first via structure on the surface of the substrate, the first via structure including the first metal layer, the second metal layer, and a third metal layer, the second metal layer being disposed on the first metal layer and the third metal layer being disposed on the second metal layer at a central portion of the first via structure, wherein the first metal layer of the first EMS device is coupled to the first metal layer of the first via structure, wherein the second metal layer includes a planar portion and sloped portion and the third metal layer includes a planar portion and a sloped portion, and wherein the first metal layer of the first EMS device and the first metal layer of the first via structure are the same metal layers;
a first dielectric layer that includes a portion that contacts and is between a top surface of the first metal layer and a bottom surface of the sloped portion of the second metal layer;
a second dielectric layer that includes a portion that contacts and is between a top surface of the second metal layer and a bottom surface of the sloped portion of the third metal layer; and
an electronic component disposed over the first via structure and coupled to the third metal layer to thereby electrically connect the electronic component to the first EMS device,
wherein each of the first dielectric layer and the second dielectric layer is between about 10 nm to about 1 micron thick.

2. The apparatus of claim 1 , wherein the first EMS device includes a first pixel device.

3. The apparatus of claim 2 , further comprising:
an array of pixel devices, wherein the first pixel device is part of the array of pixel devices.

4. The apparatus of claim 2 , wherein the first pixel device includes an interferometric modulator.

5. The apparatus of claim 1 , wherein the first metal layer, the second metal layer, and the third metal layer of the first via structure are in electrical contact with one another at the central portion of the first via structure.

6. The apparatus of claim 1 , wherein the central portion of the first via structure has a substantially square shape.

7. The apparatus of claim 1 , further comprising:
a device being coupled to the first metal layer of the first via structure, thereby coupling the device to the first EMS device.

8. The apparatus of claim 7 , wherein the device includes a thin-film transistor device.

9. The apparatus of claim 1 , further comprising:
a plurality of via structures on the surface of the substrate, the plurality of via structures including the first via structure and a second via structure, the second via structure including the second metal layer and the third metal layer, the third metal layer being disposed on the second metal layer at a central portion of the second via structure.

10. The apparatus of claim 9 , wherein the second metal layer of the first EMS device is coupled to the second metal layer of the second via structure, and wherein the second metal layer of the first EMS device and the second metal layer of the second via structure are the same metal layers.

11. The apparatus of claim 9 , wherein the second metal layer and the third metal layer of the second via structure are in electrical contact with one another at the central portion of the second via structure.

12. The apparatus as recited in claim 1 , further comprising:
a display;
a processor that is configured to communicate with the display, the processor being configured to process image data; and
a memory device that is configured to communicate with the processor.

13. The apparatus as recited in claim 12 , further comprising:
a driver circuit configured to send at least one signal to the display; and
a controller configured to send at least a portion of the image data to the driver circuit.

14. The apparatus as recited in claim 12 , further comprising:
an image source module configured to send the image data to the processor, wherein the image source module includes at least one of a receiver, transceiver, and transmitter.

15. The apparatus as recited in claim 12 , further comprising:
an input device configured to receive input data and to communicate the input data to the processor.

16. An apparatus comprising:
a substrate;
a first electromechanical systems (EMS) device on a surface of the substrate, the first EMS device including a first metal layer and a second metal layer; and
a first via structure on the surface of the substrate, the first via structure including the first metal layer, the second metal layer, a third metal layer, and a fourth metal layer, the second metal layer being disposed on the first metal layer, the third metal layer being disposed on the second metal layer, and the fourth metal layer being disposed on the third metal layer at a central portion of the first via structure, wherein the second metal layer includes a planar portion and sloped portion and the third metal layer includes a planar portion and a sloped portion, wherein the first metal layer of the first EMS device is coupled to the first metal layer of the first via structure, and wherein the first metal layer of the first EMS device and the first metal layer of the first via structure are the same metal layers;
a first dielectric layer that includes a portion that contacts and is between a top surface of the first metal layer and a bottom surface of the sloped portion of the second metal layer;
a second dielectric layer that includes a portion that contacts and is between a top surface of the second metal layer and a bottom surface of the sloped portion of the third metal layer; and
an electronic component disposed over the first via structure and coupled to the third metal layer to thereby electrically connect the electronic component to the first EMS device,
wherein each of the first dielectric layer and the second dielectric layer is between about 10 nm to about 1 micron thick.

17. The apparatus of claim 16 , wherein the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer of the first via structure are in electrical contact with one another at the central portion of the first via structure.

18. The apparatus of claim 16 , further comprising:
a plurality of via structures, the plurality of via structures including the first via structure and a second via structure, the second via structure including the second metal layer, the third metal layer, and the fourth metal layer, the third metal layer being disposed on the second metal layer and the fourth metal layer being disposed on the third metal layer at a central portion of the second via structure.

19. The apparatus of claim 18 , wherein the second metal layer, the third metal layer, and the fourth metal layer of the second via structure are in electrical contact with one another at the central portion of the second via structure.

20. The apparatus of claim 1 , wherein the second metal layer includes a second sloped portion, the third metal layer includes a second sloped portion, a portion of the first dielectric layer is between a top surface of the first metal layer and a bottom surface of the second sloped portion of the second metal layer, and a portion of the second dielectric layer contacts and is between a top surface of the second metal layer and a bottom surface of the second sloped po

Assignees

• Pan Yaoling
• Zhou Lixia
• Snaptrack Inc

Inventors

• Pan Yaoling
• Zhou Lixia

Classifications

• B81C1/00246

  Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate · CPC title

• B81B7/0006 Primary

  Interconnects · CPC title