Thin film transistor array substrate, method for fabricating the same and display device

Patent metadata

Field	Value
Publication number	US-10128272-B2
Application number	US-201414421279-A
Country	US
Kind code	B2
Filing date	Apr 28, 2014
Priority date	Jan 8, 2014
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

Disclosed are a TFT array substrate, a method for fabricating the same and a display device. The TFT array substrate includes a plurality of pixel units, each of the plurality of pixel units includes a common electrode ( 9 ). The common electrode ( 9 ), is comb-shaped, and includes a plurality of strip electrodes and a plurality of slits. Each of the strip electrodes is configured for reflecting light incident on the strip electrode, and each of the slits is configured for transmitting light incident on the slit. As the comb-shaped common electrode with both a reflective region and a transmissive region is formed through a single patterning process, the fabrication process is simplified and the fabrication cost and difficulty are reduced.

First claim

What is claimed is:

1. A TFT array substrate, comprising: a plurality of pixel units, each of the plurality of pixel units comprising a common electrode, wherein the common electrode is comb-shaped, and the common electrode comprises a plurality of strip electrodes and a plurality of slits, wherein each of the strip electrodes is configured for reflecting light incident on the strip electrode, and each of the slits is configured for transmitting light incident on the slit, and all of the plurality of strip electrodes and the plurality of slits are extended in one and the same direction in each pixel unit;
wherein the TFT array substrate further comprises a plurality of gate signal lines and a plurality of data signal lines disposed as intersecting each other, the slits are disposed obliquely as having an angle with the gate signal lines, and the angle is greater than 0 and smaller than 90 degrees.

2. The TFT array substrate of claim 1 , wherein a material of the strip electrodes is a metal with a resistivity equal to or less than 50 Ω/cm2 and has reflective property.

3. The TFT array substrate of claim 2 , wherein the material of the strip electrodes is aluminum or titanium.

4. The TFT array substrate of claim 1 , wherein the plurality of strip electrodes are of a same width.

5. The TFT array substrate of claim 1 , wherein the plurality of slits are of a same width.

6. The TFT array substrate of claim 1 , wherein a ratio between a total area of the plurality of strip electrodes and that of the plurality of slits is 3:5.

7. A display device, comprising the TFT array substrate of claim 1 .

8. A method for fabricating a TFT array substrate, wherein the TFT array substrate comprises a comb-shaped common electrode, the method comprising:
forming a pattern of the comb-shaped common electrode through a single patterning process, wherein the comb-shaped common electrode comprises a plurality of strip electrodes and a plurality of slits, each of the strip electrodes is configured for reflecting light incident on the strip electrode, and each of the slits is configured for transmitting light incident on the slit;
wherein all of the plurality of strip electrodes and the plurality of slits are extended in one and the same direction in each pixel unit;
the method further comprising forming a plurality of gate signal lines and a plurality of data signal lines disposed as intersecting each other, wherein the slits are disposed obliquely as having an angle with the gate signal lines, and the angle is greater than 0 and smaller than 90 degrees.

9. The method of claim 8 , further comprising:
providing a base substrate;
forming a gate electrode on the base substrate;
forming a gate insulation layer, an active layer and an etch stop layer on the base substrate having the gate electrode formed thereon;
forming a source/drain electrode on the base substrate having the etch stop layer formed thereon;
forming a pixel electrode on the base substrate having the source/drain electrode formed thereon; and
forming an insulation protection layer on the base substrate having the pixel electrode formed there on;
wherein the common electrode is formed on the insulation protection layer.

Assignees

• Boe Technology Group Co Ltd
• Beijing Boe Optoelectronics Tech Co Ltd

Inventors

• Zhang Jiaxiang
• Guo Jian
• Jiang Xiaohui
• Yan Changjiang

Classifications

• H01L27/124 Primary

  Electricity · mapped topic

• G02F2001/134318

  Physics · mapped topic

• G02F1/134363

  for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS] · CPC title

• H01L21/84

  Electricity · mapped topic

• G02F1/133555 Primary

  Transflectors · CPC title