RF module

Patent metadata

Field	Value
Publication number	US-10128204-B2
Application number	US-201715730466-A
Country	US
Kind code	B2
Filing date	Oct 11, 2017
Priority date	Oct 14, 2016
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

In accordance with an embodiment, an RF module includes a bulk semiconductor substrate with at least one integrated RF component integrated in a first main surface region of the bulk semiconductor substrate; an insulator structure surrounding a side surface region of the bulk semiconductor substrate; a wiring layer stack including at least one structured metallization layer embedded into an insulation material, the wiring layer stack being arranged on the first main surface region of the bulk semiconductor substrate and a first main surface region of the insulator structure; and a carrier structure at a second main surface region of the insulator structure, wherein the carrier structure and the insulator structure include different materials.

First claim

What is claimed is:

1. An RF module comprising:
a bulk semiconductor substrate with at least one integrated RF component integrated in a first main surface region of the bulk semiconductor substrate wherein the bulk semiconductor substrate furthermore comprises a second main surface region and a side surface region;
an insulator structure surrounding the side surface region of the bulk semiconductor substrate, wherein the insulator structure comprises a first main surface region and second main surface region;
a wiring layer stack comprising at least one structured metallization layer embedded into an insulation material, the wiring layer stack being arranged on the first main surface region of the bulk semiconductor substrate and the first main surface region of the insulator structure, wherein the first main surface region of the bulk semiconductor substrate adjoins the first main surface region of the insulator structure; and
a carrier structure at the second main surface region of the insulator structure, wherein the carrier structure and the insulator structure comprise different materials.

2. The RF module as claimed in claim 1 , wherein the first main surface region of the insulator structure is formed flush with the first main surface region of the bulk semiconductor substrate.

3. The RF module as claimed in claim 1 , wherein the insulator structure is furthermore arranged at the second main surface region of the bulk semiconductor substrate.

4. The RF module as claimed in claim 1 , wherein the insulator structure comprises:
a first material layer surrounding the side surface region of the bulk semiconductor substrate; and
a second material layer arranged between the first material layer and the carrier structure and also arranged between the second main surface region of the bulk semiconductor substrate and the carrier structure.

5. The RF module as claimed in claim 4 , wherein the first material layer and the second material layer comprise different materials or material compositions.

6. The RF module as claimed in claim 1 , wherein the insulator structure comprises a material layer surrounding the side surface region and surrounding the second main surface region of the bulk semiconductor substrate.

7. The RF module as claimed in claim 1 , wherein the insulator structure is formed as a continuous layer comprising an insulation material.

8. The RF module as claimed in claim 1 , wherein the insulator structure comprises a structured insulation material comprising at least one supporting element between the wiring layer stack and the carrier structure.

9. The RF module as claimed in claim 1 , wherein the insulator structure comprises at least one electrically insulating material from a group of materials, wherein the group of materials comprises benzocyclobutene, polymer-based boron material, glass solder, glass frit, silicon dioxide, silicon nitride, carbon, doped glass materials, epoxy-based composite materials, PMMA, WBA, polyimide and PDMS.

10. The RF module as claimed in claim 1 , wherein:
the structured metallization layer comprises an RF wiring structure; and
at least a proportion of 80% of the RF wiring structure of the wiring layer stack is arranged above the insulator structure.

11. The RF module as claimed in claim 1 , wherein at least one passive circuit element is arranged in the wiring layer stack.

12. The RF module as claimed in claim 11 , wherein at least an areal proportion of 60% of the at least one passive circuit element is arranged above the insulator structure.

13. The RF module as claimed in claim 1 , wherein a logic block is arranged at the bulk semiconductor substrate and forms an integrated RF circuit arrangement with the at least one integrated RF component assigned to the logic block.

14. The RF module as claimed in claim 1 , wherein the carrier structure comprises an isolating or a semi-isolating carrier material.

15. The RF module as claimed in claim 1 , wherein the carrier structure is formed as a stiffening element for the RF module.

16. The RF module as claimed in claim 1 , wherein:
the bulk semiconductor substrate has a thickness of between 5 and 50 μm;
the insulator structure has a thickness of between 5 and 100 μm;
the wiring layer stack has a thickness of between 5 and 50 μm; and
the carrier structure has a thickness of between 50 and 300 μm.

17. The RF module as claimed in claim 1 , further comprising a plurality of bulk semiconductor substrates surrounded by the insulator structure in each case at the side surface regions and the second main surface regions.

18. The RF module as claimed in claim 17 , comprising a plurality of bulk semiconductor substrates surrounded by the insulator structure in each case at the side surface regions and the second main surface regions.

19. An RF module comprising:
a first, second and third layer structure arranged one above another in a stack, wherein:
the first layer structure comprises a bulk semiconductor substrate with at least one RF component integrated therein, and an insulator structure regionally surrounding the bulk semiconductor substrate,
the second layer structure comprises a wiring layer stack comprising at least one structured metallization layer embedded in an insulation material, the wiring layer stack being arranged at the bulk semiconductor substrate and the insulator structure adjoining the bulk semiconductor substrate, and
the third layer structure comprises a carrier structure, wherein the carrier structure and the insulator structure comprise different materials.

20. The RF module as claimed in claim 19 , wherein:
the at least one RF component is integrated in a first main surface region of the bulk semiconductor substrate;
the bulk semiconductor substrate furthermore comprises a second main surface region and a side surface region;
the insulator structure surrounds the side surface region of the bulk semiconductor substrate and is arranged at the second main surface region of the bulk semiconductor substrate; and
the insulator structure furthermore comprises a first and second, opposite main surface region.

21. The RF module as claimed in claim 20 , wherein the insulator structure comprises a first material layer surrounding the side surface region of the bulk semiconductor substrate, and a second material layer arranged between the first material layer and the carrier structure and also between the second main surface region of the bulk semiconductor substrate and the carrier structure.

22. The RF module as claimed in claim 20 , wherein the insulator structure comprises a material layer surrounding the side surface region and also surrounding the second main surface region of the bulk semiconductor substrate.

23. The RF module as claimed in claim 19 , wherein:
the structured metallization layer comprises an RF wiring structure; and
at least a proportion of 60% of the RF wiring structure of the wiring layer stack is arranged above the insulator structure.

24. The RF module as claimed in claim 19 , wherein:
passive circuit elements are arranged in the wiring layer stack; and
at least an areal proportion of 60% of the passive circuit elements is arranged above the insulator structure.

25. The RF module as claimed in claim 19 , wherein a logic block is arranged at the bulk semiconductor substrate and forms an integrated RF circuit arrangement with the at least one RF component assigned

Assignees

• Infineon Technologies Ag

Inventors

• Ahrens Carsten
• Umminger Katharina
• Von Koblinski Carsten

Classifications

• H10P72/7434

  used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate · CPC title

• H10P72/743

  used as a support during manufacture of interconnect decals or build up layers · CPC title

• H10P72/74

  using temporarily an auxiliary support · CPC title

• H10W90/734

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/726

  between a chip and a stacked lead frame, conducting package substrate or heat sink · CPC title