Process of filling the high aspect ratio trenches by co-flowing ligands during thermal CVD

Patent metadata

Field	Value
Publication number	US-10128150-B2
Application number	US-201615083590-A
Country	US
Kind code	B2
Filing date	Mar 29, 2016
Priority date	Apr 3, 2015
Publication date	Nov 13, 2018
Grant date	Nov 13, 2018

Abstract

Implementations of the present disclosure generally relate to methods for forming thin films in high aspect ratio feature definitions. In one implementation, a method of processing a substrate in a process chamber is provided. The method comprises flowing a boron-containing precursor comprising a ligand into an interior processing volume of a process chamber, flowing a nitrogen-containing precursor comprising the ligand into the interior processing volume and thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate.

First claim

The invention claimed is:

1. A method of processing a substrate, comprising:
flowing a boron-containing precursor comprising an amino group into an interior processing volume of a process chamber, wherein the boron-containing precursor is selected from

 and combinations thereof;
flowing a nitrogen-containing precursor comprising a functional group that matches the amino group into the interior processing volume, wherein the nitrogen-containing precursor is selected from the group consisting of: HNR 2 , NR 3 , and combinations thereof; and
thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate, wherein R is a lower alkyl group containing from 1 to 5 carbon atoms.

2. The method of claim 1 , wherein the boron-containing precursor is selected from the group consisting of: dimethylamine borane, trimethylamine borane, triethylamine borane, and combinations thereof.

3. The method of claim 1 , wherein thermally decomposing the boron-containing precursor and the nitrogen-containing precursor comprises heating the boron-containing precursor and the nitrogen-containing precursor at a temperature of about 200 degrees Celsius to about 800 degrees Celsius.

4. The method of claim 3 , wherein thermally decomposing the boron-containing precursor and the nitrogen-containing precursor comprises heating the boron-containing precursor and the nitrogen-containing precursor at a temperature of about 300 degrees Celsius to about 550 degrees Celsius.

5. The method of claim 1 , wherein the high aspect ratio feature definition is selected from vias, trenches, lines, contact holes, through-holes and combinations thereof.

6. The method of claim 5 , wherein the high aspect ratio feature definition has a height to width ratio of at least about 5:1 or more.

7. The method of claim 1 , wherein R is selected from the group of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, and neopentyl.

8. A method of processing a substrate, comprising:
flowing a boron-containing precursor into an interior processing volume of a process chamber, wherein the boron-containing precursor is

flowing a nitrogen-containing precursor into the interior processing volume, wherein the nitrogen-containing precursor is HNR 2 ; and
thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate, wherein R is a lower alkyl group of 1 to 5 carbon atoms.

9. The method of claim 8 , wherein the boron-containing precursor is dimethylamine borane.

10. The method of claim 8 , wherein thermally decomposing the boron-containing precursor and the nitrogen-containing precursor comprises heating the boron-containing precursor and the nitrogen-containing precursor at a temperature of about 200 degrees Celsius to about 800 degrees Celsius.

11. The method of claim 10 , wherein thermally decomposing the boron-containing precursor and the nitrogen-containing precursor comprises heating the boron-containing precursor and the nitrogen-containing precursor at a temperature of about 300 degrees Celsius to about 550 degrees Celsius.

12. The method of claim 8 , wherein the high aspect ratio feature definition is selected from vias, trenches, lines, contact holes, through-holes and combinations thereof.

13. The method of claim 12 , wherein the high aspect ratio feature definition has a height to width ratio of at least about 5:1 or more.

14. The method of claim 8 , wherein R is selected from the group of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, and neopentyl.

15. A method of processing a substrate, comprising:
flowing a boron-containing precursor into an interior processing volume of a process chamber, wherein the boron-containing precursor is

flowing a nitrogen-containing precursor into the interior processing volume, wherein the nitrogen-containing precursor is NR 3 ; and
thermally decomposing the boron-containing precursor and the nitrogen-containing precursor in the interior processing volume to deposit a boron nitride layer over at least one or more sidewalls and a bottom surface of a high aspect ratio feature definition formed in and below a surface of a dielectric layer on the substrate, wherein R is a lower alkyl group of 1 to 5 carbon atoms.

16. The method of claim 15 , wherein the boron-containing precursor is selected from trimethylamine borane and triethylamine borane.

17. The method of claim 15 , wherein thermally decomposing the boron-containing precursor and the nitrogen-containing precursor comprises heating the boron-containing precursor and the nitrogen-containing precursor at a temperature of about 200 degrees Celsius to about 800 degrees Celsius.

18. The method of claim 17 , wherein thermally decomposing the boron-containing precursor and the nitrogen-containing precursor comprises heating the boron-containing precursor and the nitrogen-containing precursor at a temperature of about 300 degrees Celsius to about 550 degrees Celsius.

19. The method of claim 15 , wherein the high aspect ratio feature definition is selected from vias, trenches, lines, contact holes, through-holes and combinations thereof and has a height to width ratio of at least about 5:1 or more.

20. The method of claim 15 , wherein R is selected from the group of methyl, ethyl, propyl, isopropyl, butyl, isobutyl, tert-butyl, and neopentyl.

Assignees

• Applied Materials Inc

Inventors

• Manna Pramit
• Cheng Rui
• Chan Kelvin
• Mallick Abhijit Basu

Classifications

• H10P14/43 Primary

  Chemical deposition, e.g. chemical vapour deposition [CVD] · CPC title

• H10W20/0526

  by thermal treatment thereof · CPC title

• H10W20/056

  by filling conductive material into holes, grooves or trenches · CPC title

• H10W20/035 Primary

  combinations of barrier, adhesion or liner layers, e.g. multi-layered barrier layers · CPC title

• H01L21/76864

  Electricity · mapped topic