Mtj structure having vertical magnetic anisotropy
US-2016359102-A1 · Dec 8, 2016 · US
Spin orbit torque magnetic memory device
US10127956B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10127956-B2 |
| Application number | US-201715655212-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 20, 2017 |
| Priority date | May 13, 2015 |
| Publication date | Nov 13, 2018 |
| Grant date | Nov 13, 2018 |
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Abstract
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A magnetic memory device may include tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked, a conductive line structure configured to supply an in-plane current to the unit cells and to include an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy, and a voltage applying unit configured to independently apply a selection voltage to each of the tunnel junction unit cells. Each of the tunnel junction unit cells may have a magnetization direction that is selectively changed by the in-plane current and the selection voltage.
First claim
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What is claimed is: 1. A magnetic memory device, comprising: tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked; a conductive line structure configured to supply an in-plane current and connected to the unit cells, the conductive line structure comprising an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, which is provided adjacent to the antiferromagnetic layer and has an in-plane magnetic anisotropy; and a voltage applying unit configured to independently apply a selection voltage to each of the tunnel junction unit cells, wherein each of the tunnel junction unit cells has a magnetization direction that is selectively changed by the in-plane current and the selection voltage; wherein the in-plane current flows through both the antiferromagnetic layer of the conductive line structure and the ferromagnetic layer of conductive line structure; wherein the antiferromagnetic layer of the conductive line structure and the ferromagnetic layer of conductive line structure are elongated to the conductive line structure; and wherein the conductive line structure is configured to induce a horizontal exchange bias field in the free magnetic layer, and the in-plane current flowing through the conductive line structure produces a spin-orbit spin torque. 2. The magnetic memory device of claim 1 , wherein the pinned magnetic layer and the free magnetic layer are formed of at least one ferromagnetic materials selected from a group consisting of Fe, Co, Ni, B, Si, Zr, Pt, Tb, Pd, Cu, and W. 3. The magnetic memory device of claim 1 , wherein the insulating layer is formed of a material selected from AlOx, MgO, TaOx, ZrOx, and mixtures thereof. 4. The magnetic memory device of claim 1 , wherein each of the antiferromagnetic and ferromagnetic layers included in the conductive line structure is formed of at least one of metallic materials selected from a group consisting of Co, Fe, Ni, Cu, Ta, Pt, W, Hf, Ir, Rh, Pd, Gd, Bi, Ir, and Mn. 5. The magnetic memory device of claim 1 , wherein the antiferromagnetic layer is formed of a material having a ferrimagnetic property and is provided to be in surface contact with the free magnetic layer. 6. The magnetic memory device of claim 1 , wherein the free magnetic layer has perpendicular magnetic anisotropy (PMA). 7. The magnetic memory device of claim 1 , wherein the antiferromagnetic layer and the ferromagnetic layer are provided to be in surface contact with each other. 8. The magnetic memory device of claim 1 , wherein the ferromagnetic layer is configured to induce a horizontal exchange bias in the antiferromagnetic layer, through a thermal annealing process under a horizontal magnetic field.
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- What does patent US10127956B2 cover?
- A magnetic memory device may include tunnel junction unit cells, each including a pinned magnetic layer, an insulating layer, and a free magnetic layer which are sequentially stacked, a conductive line structure configured to supply an in-plane current to the unit cells and to include an antiferromagnetic layer, which is provided adjacent to the free magnetic layer, and a ferromagnetic layer, w…
- Who is the assignee on this patent?
- Univ Korea Res & Bus Found
- What technology area does this patent fall under?
- Primary CPC classification G11C11/02. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 13 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).