Lithographic patterning

US10126652B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10126652-B2
Application numberUS-201615269202-A
CountryUS
Kind codeB2
Filing dateSep 19, 2016
Priority dateSep 18, 2015
Publication dateNov 13, 2018
Grant dateNov 13, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

This disclosure provides embodiments of an approach that enforces coexistence of multiple, aligned block copolymer morphologies within a single patterning layer.

First claim

Opening claim text (preview).

The invention claimed is: 1. A method for creating patterns on a surface of a substrate, comprising depositing a polymer brush onto the surface of the substrate; depositing a resist layer; forming grating patterns onto the resists; developing the grating patterns; etching to transfer the grating pattern to the polymer brush; depositing a block copolymer film onto to the substrate; and forming a pattern on the surface of the substrate, said pattern comprising multiple morphologies on a single patterning layer. 2. The method of claim 1 , wherein the block copolymer film comprises PS-PMMA (polystyrene-poly(methylmethacrylate)), PS-P2VP (polystyrene-b-2-vinylpyridine), PS-P4VP (polystyrene-b-4-vinylpyridine), PS-PEO (polystyrene-b-polyethylene oxide), or PS-PDMS (polystyrene-b-polydimethylsiloxane). 3. The method of claim 1 , wherein the block copolymer has an average molecular weight ranging approximately from about 5 kg/mol to about 500 kg/mol. 4. The method of claim 2 , wherein the block copolymer comprises more than 2 copolymers. 5. The method of claim 1 , wherein forming grating patterns onto the resists is achieved by electron beam lithography photolithography, ion beam lithography, laser lithography, interference lithography, or imprint lithography. 6. The method of claim 1 , further comprising: plasma cleaning the substrate before depositing the polymer brush. 7. The method of claim 1 , further comprising: annealing the block copolymer film. 8. The method of claim 1 , wherein the block copolymer film has a predetermined pattern. 9. The method of claim 8 , wherein the predetermined pattern comprises lines. 10. The method of claim 8 , wherein the predetermined pattern comprises ordered dots. 11. The method of claim 10 , wherein the dots are structured into hexagonal dot arrays. 12. The method of claim 8 , wherein the predetermined pattern comprises lines and ordered dots. 13. The method of claim 1 , wherein the grating patterns have a pitch between about 40 nm and about 60 nm. 14. The method of claim 13 , wherein the pitch is from 42 nm to 54 nm. 15. The method of claim 1 , wherein the method further comprises varying a prepattern linewidth, varying a duty cycle, or varying a prepattern pitch within two regions of a prepattern. 16. The method of claim 1 , wherein the multiple morphologies comprise dots and lines. 17. The method of claim 1 , wherein the multiple morphologies comprise alternating dot array and line array regions.

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Classifications

  • Treatment after imagewise removal, e.g. baking · CPC title

  • Finishing the coated layer, e.g. drying, baking, soaking · CPC title

  • Non-aqueous compositions · CPC title

  • G03F7/2037Primary

    Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation · CPC title

  • Coating on a rotating support, e.g. using a whirler or a spinner · CPC title

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Frequently asked questions

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What does patent US10126652B2 cover?
This disclosure provides embodiments of an approach that enforces coexistence of multiple, aligned block copolymer morphologies within a single patterning layer.
Who is the assignee on this patent?
Brookhaven Science Ass Llc
What technology area does this patent fall under?
Primary CPC classification G03F7/2037. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 13 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).