Method for directed self-assembly (DSA) of block copolymers
US-9129812-B2 · Sep 8, 2015 · US
US10126652B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10126652-B2 |
| Application number | US-201615269202-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 19, 2016 |
| Priority date | Sep 18, 2015 |
| Publication date | Nov 13, 2018 |
| Grant date | Nov 13, 2018 |
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This disclosure provides embodiments of an approach that enforces coexistence of multiple, aligned block copolymer morphologies within a single patterning layer.
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The invention claimed is: 1. A method for creating patterns on a surface of a substrate, comprising depositing a polymer brush onto the surface of the substrate; depositing a resist layer; forming grating patterns onto the resists; developing the grating patterns; etching to transfer the grating pattern to the polymer brush; depositing a block copolymer film onto to the substrate; and forming a pattern on the surface of the substrate, said pattern comprising multiple morphologies on a single patterning layer. 2. The method of claim 1 , wherein the block copolymer film comprises PS-PMMA (polystyrene-poly(methylmethacrylate)), PS-P2VP (polystyrene-b-2-vinylpyridine), PS-P4VP (polystyrene-b-4-vinylpyridine), PS-PEO (polystyrene-b-polyethylene oxide), or PS-PDMS (polystyrene-b-polydimethylsiloxane). 3. The method of claim 1 , wherein the block copolymer has an average molecular weight ranging approximately from about 5 kg/mol to about 500 kg/mol. 4. The method of claim 2 , wherein the block copolymer comprises more than 2 copolymers. 5. The method of claim 1 , wherein forming grating patterns onto the resists is achieved by electron beam lithography photolithography, ion beam lithography, laser lithography, interference lithography, or imprint lithography. 6. The method of claim 1 , further comprising: plasma cleaning the substrate before depositing the polymer brush. 7. The method of claim 1 , further comprising: annealing the block copolymer film. 8. The method of claim 1 , wherein the block copolymer film has a predetermined pattern. 9. The method of claim 8 , wherein the predetermined pattern comprises lines. 10. The method of claim 8 , wherein the predetermined pattern comprises ordered dots. 11. The method of claim 10 , wherein the dots are structured into hexagonal dot arrays. 12. The method of claim 8 , wherein the predetermined pattern comprises lines and ordered dots. 13. The method of claim 1 , wherein the grating patterns have a pitch between about 40 nm and about 60 nm. 14. The method of claim 13 , wherein the pitch is from 42 nm to 54 nm. 15. The method of claim 1 , wherein the method further comprises varying a prepattern linewidth, varying a duty cycle, or varying a prepattern pitch within two regions of a prepattern. 16. The method of claim 1 , wherein the multiple morphologies comprise dots and lines. 17. The method of claim 1 , wherein the multiple morphologies comprise alternating dot array and line array regions.
Treatment after imagewise removal, e.g. baking · CPC title
Finishing the coated layer, e.g. drying, baking, soaking · CPC title
Non-aqueous compositions · CPC title
Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation · CPC title
Coating on a rotating support, e.g. using a whirler or a spinner · CPC title
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