Signal enhancement by silk photonic crystals

US10126467B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10126467-B2
Application numberUS-201214363216-A
CountryUS
Kind codeB2
Filing dateDec 5, 2012
Priority dateDec 5, 2011
Publication dateNov 13, 2018
Grant dateNov 13, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

The present invention provides silk photonic crystals that can be used to enhance light-induced effects. Also disclosed are biocompatible, functionalized, all-protein inverse opals and related methods.

First claim

Opening claim text (preview).

What is claimed is: 1. An apparatus comprising: a silk photonic crystal, the crystal comprising nanoscale periodic structures that exhibit structural color when they are exposed to incident electromagnetic radiation; and a light responsive entity that responds when it is exposed to electromagnetic radiation, wherein the electromagnetic radiation elicits a light induced effect, wherein the light responsive entity is coupled to the silk photonic crystal, wherein the nanoscale periodic structures are arranged and constructed so that electromagnetic frequencies at the silk photonic crystal's band gap edge substantially overlap with those electromagnetic frequencies that elicit the light-induced effect in the light responsive entity, so that when the photonic crystal is exposed to incident radiation it exhibits structural color, the light-responsive entity is exposed to the exhibited structural color, the elicited light-induced effect in the light responsive entity is amplified and/or enhanced by the exhibited structural color. 2. The apparatus of claim 1 , wherein the silk photonic crystal is a silk inverse opal. 3. The apparatus of claim 2 , wherein the silk inverse opal has a lattice constant in a range of between about 200 nm and about 600 nm. 4. The apparatus of claim 2 , wherein the silk inverse opal has a face-centered cubic structure. 5. The apparatus of claim 2 , wherein the light responsive entity comprises a metallic layer on the silk inverse opal. 6. The apparatus of claim 5 , wherein the metallic layer is on an interior surface of the silk inverse opal. 7. The apparatus of claim 5 , wherein the metallic layer comprises a metal, wherein the metal is selected from the group consisting of transition metals, post-transition metals, alkali metals, alkaline earth metals, lanthanides, actinides and combinations thereof. 8. The apparatus of claim 5 , wherein the metallic layer is between about 40 nm and about 100 nm thick. 9. The apparatus of claim 1 , wherein the electromagnetic frequencies at the band gap edge are between about 450 nm and about 550 nm. 10. The apparatus of claim 1 , wherein the range of electromagnetic frequencies that induce a light-induced effect in the light responsive entity is from about 300 nm to about 600 nm. 11. The apparatus of claim 1 , wherein the light-induced effect is selected from the group consisting of absorption, excitation, emission, refraction, heating, chemical reaction, and combinations thereof. 12. The apparatus of claim 1 , wherein the light responsive entity is selected from the group consisting of: a plasmonic material, a photosensitizer, quantum dots, a fluorescent entity and combinations thereof. 13. The apparatus of claim 12 , wherein the photosensitizer is selected from the group consisting of porphyrins, chlorophylls, dyes and combinations thereof. 14. The apparatus of claim 12 , wherein the plasmonic materials comprise plasmonic nanoparticles. 15. The apparatus of claim 14 , wherein the plasmonic nanoparticles comprise metallic nanoparticles. 16. The apparatus of claim 15 , wherein the metallic nanoparticles are gold. 17. The apparatus of claim 12 , wherein the plasmonic materials comprise plasmonic crystals. 18. The apparatus of claim 12 , wherein the plasmonic materials comprise at least one metal or an alloy, or is doped with at least one metal or alloy. 19. The apparatus of claim 18 , wherein the at least one metal is a noble metal or non-noble metal. 20. The apparatus of claim 19 , wherein the noble metal is or comprises gold, silver, ruthenium, rhodium, palladium, osmium, iridium, platinum, or mercury. 21. The apparatus of claim 19 , wherein the non-noble metal is or comprises titanium, aluminum, nickel, fluorine, cerium, tin, bismuth, antimony, molybdenum, chromium, cobalt, zinc, tungsten, polonium, rhenium and copper. 22. The apparatus of claim 12 , wherein the plasmonic materials comprise an oxide or oxides of at least one noble or non-noble metal. 23. The apparatus of claim 12 , wherein the plasmonic materials comprise silica or silk fibroin doped with rare earth emitters, such as Pr+3, Er+3, or Nd+3. 24. The apparatus of claim 12 , wherein the plasmonic materials comprise an alloy or alloys of at least one noble or non-noble metal. 25. The apparatus of claim 12 , wherein the plasmonic materials comprise a nonhomogeneous mixture of metals. 26. A method of forming the apparatus of claim 1 , comprising: preparing a silk fibroin solution; inducing a plurality of spherical units to self-assemble into a lattice; applying the silk fibroin solution to the lattice such that the silk fibroin solution fills voids between the plurality spherical units; separately or as a part of the silk fibroin solution, applying a light responsive entity to the lattice; drying the silk fibroin solution into a silk film; and removing the plurality of spherical units. 27. The method of claim 26 , wherein the step of inducing comprises: casting a solution with the plurality of spherical units onto a silicon wafer, wherein the spherical units comprise poly(methyl methacrylate); and applying heat to the silicon wafer. 28. The method of claim 26 , wherein drying the silk fibroin solution into the silk film comprises: drying the silk fibroin solution for twenty four hours at room temperature. 29. The method of claim 26 , wherein removing the plurality of spherical units comprises: soaking the silk film and the lattice of the plurality of spherical units in a solvent. 30. The method of claim 26 , wherein the light responsive entity is selected from the group consisting of a plasmonic material, plasmonic nanoparticles, a photosensitizer, quantum dots, a fluorescent entity, a metallic layer on the lattice and combinations thereof. 31. The method of claim 26 , further comprising: immersing the silk film in a substance to alter the photonic band gap of the apparatus.

Assignees

Inventors

Classifications

  • Use of proteins, e.g. casein, gelatine or derivatives thereof, as moulding material · CPC title

  • Production of other optical elements not provided for in B29D11/00009- B29D11/0073 · CPC title

  • Nanoparticle, i.e. structure having three dimensions of 100 nm or less · CPC title

  • Nanooptics, e.g. quantum optics or photonic crystals · CPC title

  • Producing optical films · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10126467B2 cover?
The present invention provides silk photonic crystals that can be used to enhance light-induced effects. Also disclosed are biocompatible, functionalized, all-protein inverse opals and related methods.
Who is the assignee on this patent?
Univ Tufts
What technology area does this patent fall under?
Primary CPC classification G02B1/005. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Nov 13 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).