Semiconductor device

US10121719B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10121719-B2
Application numberUS-201715456755-A
CountryUS
Kind codeB2
Filing dateMar 13, 2017
Priority dateJul 15, 2016
Publication dateNov 6, 2018
Grant dateNov 6, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Provided is a technique for enhancing heat dissipation properties in dissipating heat generated in an electrode to a heatsink without impairing bonding properties between the electrode and a wire. In a semiconductor device, a portion of an electrode within an inner region defined by a case, at one surface, i.e., the lower surface with respect to a position in which a wire is connected, a resin portion is provided, the resin portion extending from an inner wall of the case to an upper-surface side of the heatsink. Additionally, in the portion of the electrode within the inner region defined by the case, at one surface, i.e., the lower surface with respect to a position in which the wire is not connected, a thermal conductor is provided, the thermal conductor having higher heat conductivity than the resin portion.

First claim

Opening claim text (preview).

What is claimed is: 1. A semiconductor device comprising: a heatsink; an insulating substrate disposed above said heatsink; a semiconductor element disposed above said insulating substrate; a case made of resin, said case enclosing an upper-surface side of said heatsink, said insulating substrate, and said semiconductor element; and an electrode including a portion within an inner region defined by said case, said electrode being electrically connected to said semiconductor element at one surface of said portion through a wire, wherein in said portion of said electrode within said inner region defined by said case, at another surface with respect to a position in which said wire is connected, a resin portion is provided, said resin portion extending from an inner wall of said case to said upper-surface side of said heatsink and from an end of said electrode within said inner region defined by said case towards said inner wall of said case, and wherein in said portion of said electrode within said inner region defined by said case, at another surface with respect to a position in which said wire is not connected, a heat conductor is provided in direct contact with said electrode, said heat conductor having higher thermal conductivity than said resin portion. 2. A semiconductor device comprising: a heatsink; an insulating substrate disposed above said heatsink; a semiconductor element disposed above said insulating substrate; a case made of resin, said case enclosing an upper-surface side of said heatsink, said insulating substrate, and said semiconductor element; and an electrode including a portion within an inner region defined by said case, said electrode being electrically connected to said semiconductor element at one surface of said portion through a wire, wherein another surface of said portion of said electrode within said inner region defined by said case is an uneven surface having a predetermined pattern that includes an annular protrusion or recess, linear two-way protrusions or recesses that intersect with each other, or protrusions or recesses that have vertexes and are triangular in a side view, and wherein at said uneven surface, a resin portion is provided, said resin portion extending from an inner wall of said case to said upper-surface side of said heatsink and having an uneven portion fitted in said uneven surface. 3. The semiconductor device according to claim 2 , wherein said electrode comprises a main electrode. 4. A semiconductor device comprising: an insulating substrate whose lower part has a heat dissipation portion; a semiconductor element disposed above said insulating substrate; a case made of resin, said case enclosing an upper-surface side of said insulating substrate and said semiconductor element; and an electrode including a portion within an inner region defined by said case, said electrode being electrically connected to said semiconductor element at one surface of said portion through a wire, wherein in said portion of said electrode within said inner region defined by said case, at another surface with respect to a position in which said wire is connected, a resin portion is provided, said resin portion extending from an inner wall of said case to said upper-surface side of said insulating substrate and from an end of said electrode within said inner region defined by said case towards said inner wall of said case, and wherein in said portion of said electrode within said inner region defined by said case, at another surface with respect to a position in which said wire is not connected, a heat conductor is provided in direct contact with said electrode, said heat conductor having higher thermal conductivity than said resin portion. 5. A semiconductor device comprising: an insulating substrate whose lower part has a heat dissipation portion; a semiconductor element disposed above said insulating substrate; a case made of resin, said case enclosing an upper-surface side of said insulating substrate and said semiconductor element; and an electrode including a portion within an inner region defined by said case, said electrode being electrically connected to said semiconductor element at one surface of said portion through a wire, wherein another surface of said portion of said electrode within said inner region defined by said case is an uneven surface having a predetermined pattern that includes an annular protrusion or recess, linear two-way protrusions or recesses that intersect with each other, or protrusions or recesses that have vertexes and are triangular in a side view, and wherein at said uneven surface, a resin portion is provided, said resin portion extending from an inner wall of said case to said upper-surface side of said insulating substrate and having an uneven portion fitted in said uneven surface.

Assignees

Inventors

Classifications

  • changes in dispositions · CPC title

  • Dispositions of multiple bond wires · CPC title

  • H10W76/15Primary

    Containers comprising an insulating or insulated base · CPC title

  • Bond wires · CPC title

  • Interconnections or connectors in packages · CPC title

Patent family

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External sources

Frequently asked questions

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What does patent US10121719B2 cover?
Provided is a technique for enhancing heat dissipation properties in dissipating heat generated in an electrode to a heatsink without impairing bonding properties between the electrode and a wire. In a semiconductor device, a portion of an electrode within an inner region defined by a case, at one surface, i.e., the lower surface with respect to a position in which a wire is connected, a resin …
Who is the assignee on this patent?
Mitsubishi Electric Corp
What technology area does this patent fall under?
Primary CPC classification H10W76/15. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 06 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 1 related publication on this page (citations in our corpus or others sharing the same primary CPC).