Cleaning method of semiconductor wafer

Patent metadata

Field	Value
Publication number	US-10121649-B2
Application number	US-59270609-A
Country	US
Kind code	B2
Filing date	Dec 1, 2009
Priority date	Dec 4, 2008
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

A wax removal method uniformly removes wax adhering to a wafer surface and reduces the problems of re-adhesion of particles and filter clogging of a cleaning bath during cleaning. The method uses cleaning liquid which contains microbubbles.

First claim

What is claimed is:

1. A cleaning method of removing wax which is adhered to a semiconductor wafer surface, by using a cleaning liquid, the cleaning method comprising:
introducing a gas to the cleaning liquid by using a microbubble generating device in order to generate microbubbles in the cleaning liquid, and immersing a semiconductor wafer in the cleaning liquid which contains the microbubbles generated by the gas to clean a surface of the semiconductor wafer, wherein wax adhering to the surface of the semiconductor wafer is uniformly removed while dissolving the wax in the cleaning liquid without exfoliating the wax as a solid material,
wherein the cleaning liquid is an aqueous liquid containing an alkaline component and a surfactant component, wherein the alkaline component is quaternary ammonium hydroxide, and wherein surfactant component is limited to surfactants selected from the group consisting of tetraalkylammonium salts, alkylpyridinium salts, and amine salts.

2. The cleaning method of claim 1 , wherein the semiconductor wafer is a silicon wafer.

3. The cleaning method of claim 1 , wherein the microbubbles are formed by introducing into the cleaning liquid at least one or more gases selected from the group consisting of air, hydrogen, helium, nitrogen, oxygen, argon, and mixtures thereof.

4. The method of claim 1 , wherein a nozzle of a microbubble generating device is positioned in a cleaning container to supply microbubbles.

5. The cleaning method of claim 4 , wherein the nozzle is positioned at a bottom or side location of the cleaning container.

6. The cleaning method of claim 1 , wherein ultrasonic waves are introduced into the cleaning liquid.

7. The cleaning method of claim 1 , wherein the wafer is a bare wafer having no microelectronic devices fabricated thereon.

8. The cleaning method of claim 1 , wherein the microbubbles are air microbubbles.

9. The cleaning method of claim 1 , wherein the wax is present as a contiguous coating on an entire surface of the wafer.

10. A cleaning method of removing wax which is adhered to a semiconductor wafer surface, by using a cleaning liquid, the cleaning method comprising:
introducing a gas to the cleaning liquid by using a microbubble generating device in order to generate microbubbles in the cleaning liquid, and immersing a semiconductor wafer in the cleaning liquid which contains the microbubbles generated by the gas to clean a surface of the semiconductor wafer, wherein wax adhering to the surface of the semiconductor wafer is uniformly removed while dissolving the wax in the cleaning liquid without exfoliating the wax as a solid material;
wherein the cleaning liquid comprises an alkaline component and a surfactant component wherein the surfactant component is limited to surfactants selected from the group consisting of tetraalkylammonium salts, alkylpyridinium salts, and amine salts and wherein the alkaline component comprises at least one tetraalkylammonium hydroxide.

Assignees

• Haibara Teruo
• Siltronic Ag

Inventors

• Haibara Teruo

Classifications

• H10P70/15 Primary

  by wet cleaning only (H10P70/52 takes precedence) · CPC title

• H10P70/56 Primary

  Cleaning of wafer backside · CPC title

• H10P50/00 Primary

  Etching of wafers, substrates or parts of devices · CPC title

• B08B3/003

  Cleaning involving contact with foam · CPC title

• B08B3/102

  with means for agitating the liquid (by agitating the container B08B3/042, B08B3/044, B08B3/045, B08B3/06) · CPC title