Resistor and method for manufacturing resistor

Patent metadata

Field	Value
Publication number	US-10121574-B2
Application number	US-201615544126-A
Country	US
Kind code	B2
Filing date	Jan 27, 2016
Priority date	Jan 28, 2015
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

The resistor includes a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate, metal terminals electrically joined to the metal electrodes, and an Al member formed on the second surface side of the ceramic substrate, wherein the ceramic substrate and the Al member are joined using an Al—Si-based brazing filler metal, the metal electrodes and the metal terminals are joined to each other using a solder, and a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of −30 μm/50 mm to 700 μm/50 mm.

First claim

The invention claimed is:

1. A resistor comprising:
a chip resistive element which includes a resistive element and metal electrodes and which is formed on first surface of a ceramic substrate;
metal terminals electrically joined to the metal electrodes; and
an Al member formed on second surface side of the ceramic substrate,
wherein the ceramic substrate and the Al member are joined to each other using an Al—Si-based brazing filler metal,
the metal electrodes and the metal terminals are joined to each other using a solder, and
a degree of bending of an opposite surface of the Al member opposite to a surface on the ceramic substrate side is in a range of −30 μm/50 mm to 700 μm/50 mm,
wherein a thickness of the ceramic substrate is in a range of 0.3 mm to 1.0 mm,
wherein a thickness of the Al member is in a range of 3.0 mm to 10.0 mm, and
wherein a thickness of the metal electrodes is in a range of 2 μm or more and 3 μm or less.

2. The resistor according to claim 1 ,
wherein the Al member is a laminate of a buffer layer made of Al having a purity of 99.98% by mass or more and a heat sink and the buffer layer and the second surface of the ceramic substrate are joined to each other using an Al—Si-based brazing filler metal.

3. The resistor according to claim 2 ,
wherein a thickness of the buffer layer is in a range of 0.4 mm to 2.5 mm.

4. The resistor according to claim 1 ,
wherein the chip resistive element, the metal electrodes, and the metal terminals are at least partially covered with an insulating sealing resin and the sealing resin is a resin having a coefficient of thermal expansion in a range of 8 ppm/° C. to 20 ppm/° C.

5. A method for manufacturing a resistor with which the resistor according to claim 1 is manufactured, comprising:
a joining step of disposing an Al—Si-based brazing filler metal between the ceramic substrate and the Al member, heating the ceramic substrate and the Al member under pressure in a lamination direction, and joining the ceramic substrate and the Al member to each other using the brazing filler metal, thereby forming a joined body;
a bending correction step of correcting bending of the Al member; and
a terminal-joining step of joining metal electrodes to metal terminals,
wherein a thickness of the ceramic substrate is in a range of 0.3 mm to 1.0 mm,
wherein a thickness of the Al member is in a range of 3.0 mm to 10.0 mm, and
wherein a thickness of the metal electrodes is in a range of 2 μm or more and 3 μm or less.

6. The method for manufacturing a resistor according to claim 5 ,
wherein the bending correction step is a step of carrying out cold correction in which a correction jig having a predetermined curvature is brought into contact with the Al member side of the joined body and the joined body is pressed from the ceramic substrate side.

7. The method for manufacturing a resistor according to claim 5 ,
wherein the bending correction step is a step of carrying out pressure cooling correction in which the joined body is sandwiched by flat correction jigs respectively disposed on the Al member side and the ceramic substrate side and is cooled to at least 0° or lower and is then returned to room temperature.

8. The method for manufacturing a resistor according to claim 5 ,
wherein the bending correction step is a step of disposing a correction jig having a predetermined curvature on the Al member side prior to the joining step.

9. The method for manufacturing a resistor according to claim 5 , further comprising:
a sealing resin-forming step of disposing a mold so as to surround a circumference of the chip resistive element and loading a softened sealing resin to an inside of the mold.

10. The resistor according to claim 1 ,
wherein the resistive element is consisting of Ta—Si or RuO 2 .

11. The resistor according to claim 1 ,
wherein the metal electrodes are selected from a group consisting of Cu, a Cu alloy, Al, and Ag.

Assignees

• Mitsubishi Materials Corp

Inventors

• Nagase Toshiyuki
• Komasaki Masahito

Classifications

• H01C1/012

  the base extending along and imparting rigidity or reinforcement to the resistive element (H01C1/016 takes precedence; the resistive element being formed in two or more coils or loops as a spiral, helical or toroidal winding H01C3/18, H01C3/20; the resistive element being formed as one or more layers or coatings on a base H01C7/00) · CPC title

• H01C17/006

  adapted for manufacturing resistor chips · CPC title

• H01C1/144 Primary

  the terminals or tapping points being welded or soldered · CPC title

• H01C1/084 Primary

  using self-cooling, e.g. fins, heat sinks · CPC title

• H01C7/003

  Thick film resistors · CPC title