Resist underlayer film-forming composition containing polymer which contains nitrogen-containing ring compound

Patent metadata

Field	Value
Publication number	US-10113083-B2
Application number	US-201414910787-A
Country	US
Kind code	B2
Filing date	Aug 1, 2014
Priority date	Aug 8, 2013
Publication date	Oct 30, 2018
Grant date	Oct 30, 2018

Abstract

The present invention provides a resist underlayer film that has a wide focus position range within which a good resist shape can be obtained. A resist underlayer film-forming composition for lithography comprising a linear polymer that is obtained by a reaction of a diepoxy group-containing compound (A) with a dicarboxyl group-containing compound (B). The linear polymer has structures of the following formulae (1), (2), and (3) derived from the diepoxy group-containing compound (A) or the dicarboxyl group-containing compound (B):

The linear polymer preferably contains a polymer obtained by a reaction of two diepoxy group-containing compounds (A) each having structures of Formulae (1) and (2) with a dicarboxyl group-containing compound (B) having a structure of Formula (3), or a polymer obtained by a reaction of a diepoxy group-containing compound (A) having a structure of Formula (1) with two dicarboxyl group-containing compounds (B) each having structures of Formulae (2) and (3).

First claim

The invention claimed is:

1. A resist underlayer film-forming composition for lithography comprising a linear polymer that is obtained by a reaction of a diepoxy group-containing compound (A) with a dicarboxyl group-containing compound (B), wherein the linear polymer has structures of the following formulae (1), (2), and (3) derived from the diepoxy group-containing compound (A) or the dicarboxyl group-containing compound (B):

in Formula (1), X 1 is a group of Formula (4), (5), or (6):

wherein each of R 1 , R 2 , R 3 , and R 4 is a hydrogen atom, a C 1-6 alkyl group, a C 3-6 alkenyl group, benzyl group, or phenyl group, the phenyl group may be substituted by a group selected from the group consisting of a C 1-6 alkyl group, a halogen atom, a C 1-6 alkoxy group, a nitro group, a cyano group, a hydroxyl group, and a C 1-6 alkylthio group, and R 1 and R 2 or R 3 and R 4 may be bonded to each other to form a C 3-6 ring; and R 5 is a C 1-6 alkyl group, a C 3-6 alkenyl group, benzyl group, or phenyl group, and the phenyl group may be substituted by a group selected from the group consisting of a C 1-6 alkyl group, a halogen atom, a C 1-6 alkoxy group, a nitro group; a cyano group, a hydroxyl group, and a C 1-6 alkylthio group; and
Ar in Formula (2) is an aromatic C 6-20 fused ring, and the ring may be substituted by a group selected from the group consisting of a C 1-6 alkyl group, a halogen atom, a C 1-6 alkoxy group, a nitro group, a cyano group, a hydroxyl group, and a C 1-6 alkylthio group, wherein
the linear polymer is a polymer obtained by a reaction of two diepoxy group-containing compounds (A), one having the structure of Formula (1) and the other having the structure of Formula (2), with a dicarboxyl group-containing compound (B) having a structure of Formula (3); or
the linear polymer is a polymer obtained by a reaction of a diepoxy group-containing compound (A) having a structure of Formula (1) with two dicarboxyl group-containing compounds (B), one having the structure of Formula (2), and the other having the structure of Formula (3).

2. The resist underlayer film-forming composition according to claim 1 , wherein X 1 in Formula (1) is a group of Formula (4) or (6).

3. The resist underlayer film-forming composition according to claim 1 , wherein Ar in Formula (2) is a benzene ring or a naphthalene ring.

4. The resist underlayer film-forming composition according to claim 1 , further comprising a crosslinkable compound.

5. The resist underlayer film-forming composition according to claim 1 , further comprising an acid and/or an acid generator.

6. A resist underlayer film obtained by applying the resist underlayer film-forming composition as claimed in claim 1 to a semiconductor substrate, followed by baking.

7. The resist underlayer film-forming composition according to claim 1 , wherein a solid content of the composition is 0.1 to 70% by mass.

8. The resist underlayer film-forming composition according to claim 1 , wherein at least one of the two diepoxy group-containing compounds (A) is selected from the following formulae:

9. The resist underlayer film-forming composition according to claim 1 , wherein at least one of the dicarboxyl group-containing compounds (B) is selected from the following formulae:

10. The resist underlayer film-forming composition according to claim 1 , wherein a molar ratio of the diepoxy group-containing compound having the structure of Formula (1) to the diepoxy group-containing compound having the structure of Formula (2) is in a range of from 1:0.1 to 0.6.

11. The resist underlayer film-forming composition according to claim 1 , wherein a molar ratio of the dicarboxyl group-containing compound having the structure of Formula (2) to the dicarboxyl group-containing compound having the structure of Formula (3) is in a range of from 1:1 to 9.

12. A method for producing a semiconductor device comprising:
applying the resist underlayer film-forming composition as claimed in claim 1 to a semiconductor substrate, followed by baking to form a resist underlayer film;
forming a photoresist film on the resist underlayer film;
forming a resist pattern by exposure and development;
etching the resist underlayer film according to the formed resist pattern; and
processing the semiconductor substrate according to the patterned resist underlayer film.

Assignees

• Nissan Chemical Ind Ltd

Inventors

• Ohnishi Ryuji
• Mizuochi Ryuta
• Nishita Tokio
• Sakaida Yasushi
• Sakamoto Rikimaru

Classifications

• H10P76/2043

  using an anti-reflective coating · CPC title

• C08G63/58

  Cyclic ethers (C08G59/00 takes precedence); Cyclic carbonates; Cyclic sulfites {; Cyclic orthoesters} · CPC title

• G03F7/091 Primary

  characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement · CPC title

• C08G59/26

  heterocyclic · CPC title

• C08G59/226

  Mixtures of di-epoxy compounds · CPC title