Devices with quantum dots

Patent metadata

Field	Value
Publication number	US-10109983-B2
Application number	US-201615140588-A
Country	US
Kind code	B2
Filing date	Apr 28, 2016
Priority date	Apr 28, 2016
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

An example method of manufacturing a semiconductor device. A first wafer may be provided that includes a first layer that contains quantum dots. A second wafer may be provided that includes a buried dielectric layer and a second layer on the buried dielectric layer. An interface layer may be formed on at least one of the first layer and the second layer, where the interface layer may be an insulator, a transparent electrical conductor, or a polymer. The first wafer may be bonded to the second wafer by way of the interface layer.

First claim

What is claimed is:

1. A method of manufacturing a semiconductor device, comprising:
providing a first wafer that includes a first layer that contains quantum dots;
providing a second wafer that includes a buried dielectric layer and a second layer on the buried dielectric layer;
forming an interface layer on at least one of the first layer and the second layer;
bonding the first wafer to the second wafer by way of the interface layer,
forming a laser in the bonded first and second wafers by forming metallic contacts in proximity to a region of the first layer that contains the quantum dots such that electrical carriers are injectable from the metallic contacts into the region to cause the quantum dots to emit light; and
creating a capacitor that is to tune the laser, the capacitor comprising a portion of a cladding layer of the first layer, a portion of the interface layer, and a portion of the second layer,
wherein the interface layer is one of: an insulator and a polymer.

2. The method of claim 1 , further comprising:
prior to the forming of the interface layer, patterning the second layer into a waveguide for the laser.

3. The method of claim 1 ,
wherein the interface layer is a dielectric material.

4. The method of claim 1 ,
wherein, upon the bonding of the first wafer to the second wafer, the interface layer completely covers the second layer.

5. The method of claim 1 , wherein the first layer includes an active layer that contains the quantum dots and the cladding layer on the active layer.

6. The method of claim 5 ,
wherein creating the capacitor includes forming a first electrical contact with the cladding layer of the first layer and forming a second electrical contact with the second layer.

7. The method of claim 6 ,
wherein the first electrical contact is one of the metallic contacts of the laser.

Assignees

• Hewlett Packard Entpr Dev Lp

Inventors

• Liang Di
• Kurczveil Geza
• Beausoleil Raymond G
• Fiorentino Marco

Classifications

• H01S5/0216

  using an intermediate compound, e.g. a glue or solder · CPC title

• H01S5/0424

  lateral current injection · CPC title

• H01S5/0218

  Substrates comprising semiconducting materials from other groups of the Periodic Table than the materials of the active layer · CPC title

• H01S5/021

  Silicon based substrates · CPC title

• H01S5/0261

  Non-optical elements, e.g. laser driver components, heaters (H01S5/0265 takes precedence) · CPC title