Reverse-conducting semiconductor device

Patent metadata

Field	Value
Publication number	US-10109725-B2
Application number	US-201715630491-A
Country	US
Kind code	B2
Filing date	Jun 22, 2017
Priority date	Dec 23, 2014
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

A reverse-conducting MOS device is provided having an active cell region and a termination region. Between a first and second main side. The active cell region comprises a plurality of MOS cells with a base layer of a second conductivity type. On the first main side a bar of the second conductivity type, which has a higher maximum doping concentration than the base layer, is arranged between the active cell region and the termination region, wherein the bar is electrically connected to the first main electrode. On the first main side in the termination region a variable-lateral-doping layer of the second conductivity type is arranged. A protection layer of the second conductivity type is arranged in the variable-lateral-doping layer, which protection layer has a higher maximum doping concentration than the maximum doping concentration of the variable-lateral-doping layer in a region attached to the protection layer.

First claim

The invention claimed is:

1. A reverse-conducting MOS device, comprising:
a first main electrode on a first main side and a second main electrode on a second main side opposite to the first main side, the reverse-conducting MOS device has an active cell region and a termination region laterally surrounding the active cell region up to an edge of the reverse-conducting MOS device,
wherein the active cell region comprises a plurality of MOS cells, each of which comprises between the first main and second main side a source layer of a first conductivity type, a base layer of a second conductivity type, which is different from the first conductivity type, a drift layer of the first conductivity type and a first layer of the first conductivity type, which is higher doped than the drift layer, wherein in each MOS cell a gate electrode is arranged on the first main side,
wherein on the first main side a bar of the second conductivity type, which has a higher maximum doping concentration than the base layer, is arranged between the active cell region and the termination region and encloses the active cell region in a plane parallel to the first main side, wherein the bar is electrically connected to the first main electrode,
wherein on the first main side in the termination region a variable-lateral-doping layer of the second conductivity type is arranged, in which for all depths in the variable-lateral-doping layer the doping concentration decreases towards the edge of the reverse-conducting MOS device, which variable-lateral-doping layer is connected to the bar,
wherein on the first main side a protection layer of the second conductivity type is arranged in the variable-lateral-doping layer, which protection layer has a higher maximum doping concentration than the maximum doping concentration of the variable-lateral-doping layer in a region attached to the protection layer.

2. The reverse-conducting MOS device according to claim 1 , wherein the bar is electrically connected to the first main electrode via the base layer or directly at a bar contact area which is at most 10% of the maximum area of the bar.

3. The reverse-conducting MOS device according to claim 2 , wherein the protection layer comprises at least one ring-shaped region surrounding the active cell region, and the protection layer has a maximum doping concentration, which it at least 10 times higher than the maximum doping concentration of the variable-lateral-doping layer in a region attached to the protection layer.

4. The reverse-conducting MOS device according to claim 3 , wherein the protection layer has a maximum doping concentration of at most 5*10 18 cm −3 , and the bar and the protection layer have at least one of the same maximum doping concentration and the same thickness.

5. The reverse-conducting MOS device according to claim 4 , wherein the bar has a width between 10 to 200 μm, and the protection layer has a width of at most 20 μm.

6. The reverse-conducting MOS device according to claim 5 , wherein the protection layer comprises a plurality of protection zones, which surround the active cell region, in particular such that the distance between two neighbored protection zones is at most 50 μm.

7. The reverse-conducting MOS device according to claim 6 , wherein the width of successively following protection regions decreases in a direction towards the edge of the reverse-conducting MOS device.

8. The reverse-conducting MOS device according to claim 1 , wherein the protection layer comprises at least one ring-shaped region surrounding the active cell region.

9. The reverse-conducting MOS device according to claim 1 , wherein the protection layer has a maximum doping concentration, which it at least 10 times higher than the maximum doping concentration of the variable-lateral-doping layer in a region attached to the protection layer.

10. The reverse-conducting MOS device according to claim 1 , wherein the protection layer has a maximum doping concentration of at most 5*10 18 cm −3 .

11. The reverse-conducting MOS device according to claim 1 , wherein the bar and the protection layer have at least one of the same maximum doping concentration and the same thickness.

12. The reverse-conducting MOS device according to claim 1 , wherein the bar has a width between 10 to 200 μm.

13. The reverse-conducting MOS device according to claim 1 , wherein the protection layer has a width of at most 20 μm.

14. The reverse-conducting MOS device according to claim 1 , wherein the protection layer comprises a plurality of protection zones, which surround the active cell region, in particular such that the distance between two neighbored protection zones is at most 50 μm.

15. The reverse-conducting MOS device according to claim 1 , wherein the protection layer is a variable-lateral-doping layer, in which for all depths in the protection layer the doping concentration decreases towards the edge of the reverse-conducting MOS device.

16. The reverse-conducting MOS device according to claim 1 , wherein the protection layer comprises at least two ring-shaped regions and the distance between two neighboured protection regions is between 1 to 30 μm.

17. The reverse-conducting MOS device according to claim 1 , wherein the width of successively following protection regions decreases in a direction towards the edge of the reverse-conducting MOS device.

18. The reverse-conducting MOS device according to claim 1 , wherein the protection layer comprises at least three ring-shaped regions and in that the distance between successively following protection regions increases in a direction towards the edge of the reverse-conducting MOS device.

19. The reverse-conducting MOS device according to claim 1 , wherein the termination region is covered by a semi-insulating layer.

20. The reverse-conducting MOS device according to claim 1 , wherein the reverse-conducting MOS device is a MOSFET or a reverse-conducting insulated gate bipolar transistor or a Bimode Insulated Gate Transistor.

Assignees

• Abb Schweiz Ag

Inventors

• Storasta Liutauras
• Corvasce Chiara
• Le Gallo Manuel
• Rahimo Munaf
• Kopta Arnost

Classifications

• H01L29/0865

  Electricity · mapped topic

• H01L29/063

  Electricity · mapped topic

• H01L29/7823

  Electricity · mapped topic

• H01L29/7395 Primary

  Electricity · mapped topic

• H01L29/1095

  Electricity · mapped topic