Vapor phase growth apparatus, storage container, and vapor phase growth method

Patent metadata

Field	Value
Publication number	US-10109483-B2
Application number	US-201514930975-A
Country	US
Kind code	B2
Filing date	Nov 3, 2015
Priority date	Nov 7, 2014
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

A vapor phase growth apparatus according to one embodiment includes a reaction chamber, a storage container storing organic metal, a thermostatic bath storing a liquid with a temperature higher than a room temperature and holding the storage container immersed in the liquid, a carrier gas supply path connected to the storage container and supplying a carrier gas to the storage container, an organic-metal-containing gas transportation path connected to the storage container and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas, and a diluent gas transportation path connected to the organic-metal-containing gas transportation path at a position below a liquid level of the liquid in the thermostatic bath and transporting a diluent gas for diluting the organic-metal-containing gas.

First claim

What is claimed is:

1. A vapor phase growth apparatus comprising:
a reaction chamber;
a storage container storing organic metal and including:
a container portion capable of storing the organic metal,
a first pipe connecting an inside and an outside of the container portion and having a first valve provided outside the container portion,
a second pipe connecting the inside and the outside of the container portion and having a second valve provided outside the container portion, and
a third pipe having a third valve provided outside the container portion and connected to the second pipe inside the container portion, the third pipe being not connected to the first pipe;

a thermostatic bath storing a liquid with a temperature higher than a room temperature and equal to or lower than 60° C. and holding the storage container immersed in the liquid, the third pipe connected to the second pipe at a position below a liquid level of the liquid in the thermostatic bath;
a carrier gas supply path connected to the first pipe and supplying a carrier gas to the storage container;
an organic-metal-containing gas transportation path connected to the second pipe and the reaction chamber, the organic-metal-containing gas transportation path transporting an organic-metal-containing gas to the reaction chamber, the organic-metal-containing gas including the organic metal generated by bubbling or sublimation with the carrier gas; and
a diluent gas transportation path connected to the third pipe and transporting a diluent gas for diluting the organic-metal-containing gas.

2. The vapor phase growth apparatus according to claim 1 ,
wherein the liquid is pure water or a fluorine-based fluid.

3. The vapor phase growth apparatus according to claim 1 ,
wherein the organic metal is trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TMI), or bis(cyclopentadienyl)magnesium (Cp 2 Mg).

4. The vapor phase growth apparatus according to claim 1 ,
wherein the temperature of the liquid is equal to or higher than 30° C.

5. The vapor phase growth apparatus according to claim 1 ,
wherein the carrier gas is a hydrogen gas.

6. A storage container comprising:
a container portion capable of storing organic metal for vapor phase growth;
a first pipe connecting the inside and outside of the container portion and having a first valve provided outside the container portion;
a second pipe connecting the inside and the outside of the container portion and having a second valve provided outside the container portion; and
a third pipe having a third valve provided outside the container portion and connected to the second pipe inside the container portion, the third pipe being not connected to the first pipe.

7. The storage container according to claim 6 ,
wherein the first valve, the second valve, and the third valve are manual valves.

8. The storage container according to claim 6 ,
wherein the organic metal is trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TMI), or bis(cyclopentadienyl)magnesium (Cp 2 Mg).

9. A vapor phase growth method by using the vapor phase growth apparatus of claim 1 , the method comprising:
loading a substrate into a reaction chamber of the vapor phase growth apparatus;
bubbling or sublimating organic metal stored in the storage container of the vapor phase growth apparatus with a carrier gas to generate an organic-metal-containing gas, the storage container being immersed in a liquid with a predetermined temperature higher than a room temperature and equal to or lower than 60° C., the liquid being stored in the thermostatic bath of the vapor phase growth apparatus;
diluting the organic-metal-containing gas with a diluent gas at a position below a liquid level of the liquid by the diluent gas transportation path of the vapor phase growth apparatus; and
supplying the diluted organic-metal-containing gas by the organic-metal-containing gas transportation path of the vapor phase growth apparatus to the reaction chamber to form a semiconductor film on a surface of the substrate.

10. The vapor phase growth method according to claim 9 ,
wherein the liquid is pure water or a fluorine-based fluid.

11. The vapor phase growth method according to claim 9 ,
wherein the organic metal is trimethylgallium (TMG), trimethylaluminum (TMA), trimethylindium (TMI), or bis(cyclopentadienyl)magnesium (Cp 2 Mg).

12. The vapor phase growth method according to claim 9 ,
wherein the temperature of the liquid is equal to or higher than 30° C.

13. The vapor phase growth method according to claim 9 ,
wherein the carrier gas is a hydrogen gas.

Assignees

• Nuflare Technology Inc

Inventors

• Takahashi Hideshi
• Sato Yuusuke

Classifications

• H10P14/3444

  P-type · CPC title

• H10P14/3416

  Nitrides · CPC title

• H10P14/24 Primary

  using chemical vapour deposition [CVD] · CPC title

• H01L21/0262 Primary

  Electricity · mapped topic

• C30B25/14

  Feed and outlet means for the gases; Modifying the flow of the reactive gases · CPC title