Controlling photo acid diffusion in lithography processes

Patent metadata

Field	Value
Publication number	US-10108093-B2
Application number	US-201715782425-A
Country	US
Kind code	B2
Filing date	Oct 12, 2017
Priority date	Jul 10, 2014
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

Methods and apparatuses for minimizing line edge/width roughness in lines formed by photolithography are provided. The random diffusion of acid generated by a photoacid generator during a lithography process contributes to line edge/width roughness. Methods disclosed herein apply an electric field, a magnetic field, and/or a standing wave during photolithography processes. The field and/or standing wave application controls the diffusion of the acids generated by the photoacid generator along the line and spacing direction, preventing the line edge/width roughness that results from random diffusion. Apparatuses for carrying out the aforementioned methods are also disclosed herein.

First claim

What is claimed is:

1. A method of processing a substrate, the method comprising:
applying a photoresist layer comprising a photoacid generator to a substrate;
exposing portions of the photoresist layer to electromagnetic radiation to form substantially parallel lines of material in the photoresist layer having different chemical properties than the portions of the photoresist layer not exposed to the electromagnetic radiation;
heating the substrate after exposing the substrate; and
applying an electric field to the photoresist layer of the substrate in a direction parallel to the direction of the lines with an electrode assembly positioned proximate to the substrate, the electrode assembly comprising a plurality of individually addressable electrodes, each individually addressable electrode comprising one or more antennas, wherein the electric field is applied during the heating.

2. The method of claim 1 , wherein the electrode assembly is on a surface of a substrate support on which the substrate is positioned.

3. The method of claim 1 , wherein the electrode assembly is integrated with a substrate support on which the substrate is positioned.

4. The method of claim 1 , wherein applying the electric field comprises varying the polarities of three or more individually addressable electrodes included in the plurality of individually addressable electrodes as a function of time.

5. The method of claim 1 , wherein applying the electric field comprises driving a first set of electrodes included in the plurality of individually addressable electrodes according to a first pattern, and driving a second set of electrodes included in the plurality of individually addressable electrodes according to a second pattern.

6. The method of claim 1 , wherein each individually addressable electrode included in the plurality of individually addressable electrodes comprises one or more antennas, and the antennas associated with the plurality of individually addressable electrodes are substantially parallel to each other.

7. The method of claim 6 , wherein the plurality of individually addressable electrodes includes about 8 to about 80 individually addressable electrodes.

8. The method of claim 7 , wherein the electric field is generated by applying a voltage of between about 500V and 100 kV from a pulsed DC power source having a frequency of between about 10 Hz and 1 MHz to at least one independently addressable electrode, a duty cycle of the pulsed DC power is between about 5% and about 95%, and a rise and fall time of the pulsed DC power is between about 1 ns about 1000 ns;
wherein the substrate is heated to a temperature of between about 70° C. and about 160° C.; and
wherein a temperature of the antennas of the independently addressable electrodes are controlled to substantially match the temperature of the substrate.

9. A method of processing a substrate, the method comprising:
applying a photoresist layer comprising a photoacid generator to a substrate;
exposing portions of the photoresist layer to electromagnetic radiation to form substantially parallel lines of material in the photoresist layer having different chemical properties than the portions of the photoresist layer not exposed to the electromagnetic radiation;
heating the substrate after exposing the substrate; and
applying an electric field to the photoresist layer of the substrate in a direction parallel to the direction of the lines with an electrode assembly positioned proximate to the substrate, the electrode assembly comprising a plurality of individually addressable electrodes, the plurality of individually addressable electrodes includes about 8 to about 80 individually addressable electrodes, each individually addressable electrode comprising one or more antennas, wherein the electric field is applied during the heating.

10. The method of claim 9 , wherein the electric field is generated by applying a voltage of between about 500V and 100 kV from a pulsed DC power source having a frequency of between about 10 Hz and 1 MHz to at least one independently addressable electrode, a duty cycle of the pulsed DC power is between about 5% and about 95%, and a rise and fall time of the pulsed DC power is between about 1 ns about 1000 ns;
wherein the substrate is heated to a temperature of between about 70° C. and about 160° C.; and
wherein the temperature of the antennas of the independently addressable electrodes are controlled to substantially match the temperature of the substrate.

11. The method of claim 9 , wherein the electric field is generated by applying a voltage of between about 500V and 100 kV from a pulsed DC power source having a frequency of between about 10 Hz and 1 MHz to at least one independently addressable electrode.

12. The method of claim 11 , wherein a duty cycle of the pulsed DC power is between about 5% and about 95%.

13. The method of claim 12 , wherein a rise and fall time of the pulsed DC power is between about 1 ns about 1000 ns.

14. The method of claim 13 , wherein the substrate is heated to a temperature of between about 70° C. and about 160° C.

15. The method of claim 13 , wherein a temperature of the antennas of the independently addressable electrodes are controlled to substantially match a temperature of the substrate.

16. A method of processing a substrate, the method comprising:
applying a photoresist layer comprising a photoacid generator to a substrate;
exposing portions of the photoresist layer to electromagnetic radiation to form substantially parallel lines of material in the photoresist layer having different chemical properties than the portions of the photoresist layer not exposed to the electromagnetic radiation;
heating the substrate to a temperature of between about 70° C. and about 160° C. after exposing the substrate; and
applying an electric field to the photoresist layer of the substrate in a direction parallel to the direction of the lines with an electrode assembly positioned proximate to the substrate, the electrode assembly comprising a plurality of individually addressable electrodes, each individually addressable electrode comprising one or more antennas, wherein the electric field is applied during the heating.

17. The method of claim 16 , wherein a temperature of the antennas of the independently addressable electrodes are controlled to substantially match the temperature of the substrate.

18. The method of claim 16 , wherein the electric field is generated by applying a voltage of between about 500V and 100 kV from a pulsed DC power source.

19. The method of claim 18 , wherein the pulsed DC power source has a frequency of between about 10 Hz and 1 MHz.

20. The method of claim 18 , wherein a rise and fall time of the pulsed DC power is between about 1 ns about 1000 ns.

Assignees

• Applied Materials Inc

Inventors

• Xie Peng
• Godet Ludovic
• Bencher Christopher

Classifications

• G03F7/0045

  with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors · CPC title

• G03F7/38 Primary

  Treatment before imagewise removal, e.g. prebaking {(G03F7/265 takes precedence)} · CPC title

• G03F7/26

  Processing photosensitive materials; Apparatus therefor (G03F7/12 - G03F7/24 take precedence) · CPC title