Photosensitive resin composition and method for forming quantum dot pattern using the same

Patent metadata

Field	Value
Publication number	US-10108089-B2
Application number	US-201414437047-A
Country	US
Kind code	B2
Filing date	Jun 23, 2014
Priority date	Dec 30, 2013
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

The present disclosure provides a photosensitive resin composition and a method for forming a quantum dot pattern using the same. The photosensitive resin composition includes quantum dots which are dispersed in the photosensitive resin composition and each has a modification layer. The method for forming a quantum dot pattern includes coating, exposing and developing a photoresist to obtain the quantum dot pattern, wherein the photoresist is the above-mentioned photosensitive resin composition.

First claim

What is claimed is:

1. A photosensitive resin composition, comprising quantum dots which are dispersed in the photosensitive resin composition and each has a modification layer, wherein the modification layer is an organic ligand layer, an inorganic compound layer or a polymer layer, the organic ligand is sodium dithiocarbamate proline, cysteamine, glutathione, cysteine or L-cysteine salt, the inorganic compound is sodium citrate, the polymer is polyacrylic acid or polyethylene glycol, and
wherein the photosensitive resin composition comprises: 5 wt % to 45 wt % of alkali soluble resin, 0.5 wt % to 18 wt % of a photosensitive resin or monomer containing vinyl unsaturated double-bond, 3 wt % to 15 wt % of the quantum dots having the modification layer, 0.1 wt % to 3 wt % of a photoinitiator, 40 wt % to 85 wt % of a solvent, 0.1 wt % to 7 wt % of a silane coupling agent, and 0.1 wt % to 1 wt % of an additive.

2. The photosensitive resin composition according to claim 1 , wherein the quantum dots consist of semiconductor material A(II)B(VI) from Group II-VI or semiconductor material C(III)D(V) from Group III-V, the semiconductor material A(II)B(VI) includes compounds formed with elements Zn, Cd, Hg in Group II and elements S, Se and Te in Group VI, the semiconductor material C(III)D(V) includes compounds formed with elements B, Al, Ga and In in Group III and elements N, P, As and Sb in Group V.

3. The photosensitive resin composition according to claim 1 , wherein the quantum dots have a size of 1 nm to 10 nm and consist of semiconductor material A(II)B(VI) from Group II-VI or semiconductor material C(III)D(V) from Group III-V, the semiconductor material A(II)B(VI) includes compounds formed with elements Zn, Cd, Hg in Group II and elements S, Se and Te in Group VI, the semiconductor material C(III)D(V) includes compounds formed with elements B, Al, Ga and In in Group III and elements N, P, As and Sb in Group V.

4. The photosensitive resin composition according to claim 1 , wherein the photosensitive resin or monomer containing vinyl unsaturated double-bond is at least two selected from the group consisting of 1,6-hexanediol diacrylate, tripropanediol diacrylate, tetrapropanediol diacrylate, trimethylolpropane triacrylate, trimethylolpropane ethoxylate triacrylate, pentaerythritol tetraacrylate, tritrimethylolpropane tetraacrylate and dipentaerythritol pentaacrylate.

5. The photosensitive resin composition according to claim 1 , wherein the alkali soluble resin is aromatic (meth) acrylic acid half ester or a copolymer of styrene-maleic anhydride.

6. The photosensitive resin composition according to claim 1 , wherein the photoinitiator is at least one selected from the group consisting of: benzoyl, benzoyl methylether, benzoyl ethylether, benzoyl isopropyl ether, benzoyl butyl ether, (2,4,6-trimethylbenzoyl)diphenyl phosphine oxide, 2,2′-bis(2-dichlorophenyl)-4,4′,5,5′-tetraphenyl-1,2′-biimidazole, 2-ethyl anthraquinone, dibenzoyl, camphorquinone, methyl benzoylformate, 4-hydroxyphenyl dimethylsulfonium p-toluenesulfonate, triphenylsulfonium hexafluoroantimonate, dipenyliodonium hexafluoroantimonate, benzoyl toluenesulfonate, 2-hydroxy-2-methyl-1-phenylpropyl-1-ketone, diethoxy acetophenol, 2-methyl -2-morpholino-1-(4-methyl thiophenyl), 2-hydroxy-2-methyl-1-[4-(methylethylene)phenyl]propyl-1-ketone, 2,4-bis(trichloromethane)-6-(4-methoxyphenyl)-1,3,5-triazine, 2,4-bis(trichloromethyl)-6-piperonyl-1,3,5-triazine, 2,4-bis(trichloromethane)-6-[2-(5-methylfuran)-vinyl]-1,3,5-triazine and 2-phenyl benzyl-2-dimethylamine-1-(4-morpholine benzyl phenyl)butanone.

7. The photosensitive resin composition according to claim 1 , wherein the solvent is at least one selected from the group consisting of: formic acid, acetic acid, chloroform, acetone, butanone, fatty alcohol and ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monopropyl ether, ethylene glycol monobutyl ether, diethylene glycol diethyl ether acetic acetate, methyl ethyl ketone, methyl isobutyl ketone, monomethyl ether glycol ester, gamma-butyrolactone, methylacetic-3-ethyl ether, butyl carbitol, butyl carbitol acetate, propanediol monomethyl ether, propanediol monomethyl ether acetate, cyclohexane, xylene and isopropyl alcohol.

8. The photosensitive resin composition according to claim 1 , wherein the additive is a dispersant or a flatting agent.

9. The photosensitive resin composition according to claim 1 , wherein the quantum dots are red quantum dots, yellow quantum dots, orange quantum dots, green quantum dots, blue quantum dots or a combination thereof.

10. A method for forming a quantum dot pattern, comprising:
coating, exposing and developing a photoresist to obtain the quantum dot pattern, wherein the photoresist is the photosensitive resin composition according to claim 1 .

11. A photosensitive resin composition, comprising quantum dots which are dispersed in the photosensitive resin composition and each has a modification layer, wherein the modification layer is an inorganic compound layer and the inorganic compound layer is sodium citrate, and the quantum dots have a size of 1 nm to 10 nm and consist of semiconductor material C(III)D(V) formed with elements B, Al, Ga and In in Group III and element N in Group V.

12. A method for forming a quantum dot pattern, comprising:
coating, exposing and developing a photoresist to obtain the quantum dot pattern, wherein the photoresist is the photosensitive resin composition according to claim 11 .

13. A photosensitive resin composition, comprising quantum dots which are dispersed in the photosensitive resin composition and each has a modification layer, wherein the modification layer is an organic ligand layer, an inorganic compound layer or a polymer layer, the organic ligand is sodium dithiocarbamate proline, cysteamine, glutathione, cysteine, L-cysteine salt or 3-mercapto-1,2-propanediol, the quantum dots have a size of 1 nm to 10 nm and consist of semiconductor material A(II)B(VI) from Group II-VI or semiconductor material C(III)D(V) from Group III-V, the semiconductor material A(II)B(VI) includes compounds formed with elements Zn, Cd, Hg in Group II and elements S, Se and Te in Group VI, the semiconductor material C(III)D(V) includes compounds formed with elements B, Al, Ga and In in Group III and elements P, As and Sb in Group V;
wherein the photosensitive resin composition comprises: 5 wt % to 45 wt % of alkali soluble resin, 0.5 wt % to 18 wt % of a photosensitive resin or monomer containing vinyl unsaturated double-bond, 3 wt % to 15 wt % of the quantum dots having the modification layer, 0.1 wt % to 3 wt % of a photoinitiator, 40 wt % to 85 wt % of a solvent, 0.1 wt % to 7 wt % of a silane coupling agent, and 0.1 wt % to 1 wt % of an additive.

14. The photosensitive resin composition according to claim 13 , wherein the photosensitive resin or monomer containing vinyl unsaturated double-bond is at least two selected from the group consisting of 1,6-hexanediol diacrylate, tripropanediol diacrylate, tetrapropanediol diacrylate, trimethylolpropane triacrylate, trimethylolpropane ethoxylate triacrylate, pentaerythritol tetraacrylate, tritrimethylolpropane tetraacrylate and dipentaerythritol pentaacrylate.

15. The photosensitive resin composition according to claim 13 , wherein the alkali soluble resin is aromatic (meth) acrylic acid half ester or a copolymer of styrene-maleic anhydride.

16. The photosensitive resin composition according to claim 13 , wherein the photoinitiator is at least one selected from the group consisting of: benzoyl, benzoyl methylether, benzoyl ethylether,

Assignees

• Boe Technology Group Co Ltd

Inventors

• Gu Jingxia
• Shu Shi
• Zhang Feng
• Hui Guanbao

Classifications

• G03F7/20

  Exposure; Apparatus therefor (photographic printing apparatus for making copies G03B27/00) · CPC title

• G03F7/0048

  characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents · CPC title

• G03F7/30

  Imagewise removal using liquid means · CPC title

• G03F7/031 Primary

  Organic compounds not covered by group G03F7/029 · CPC title

• G03F7/032

  with binders · CPC title