Electronic circuit for compensating a sensitivity drift of a hall effect element due to stress

Patent metadata

Field	Value
Publication number	US-10107873-B2
Application number	US-201615066331-A
Country	US
Kind code	B2
Filing date	Mar 10, 2016
Priority date	Mar 10, 2016
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

The present disclosure is directed to an electronic circuit having a Hall effect element and a resistor bridge, all disposed over a common semiconductor substrate. The resistor bridge includes a first set of resistive elements having a first vertical epitaxial resistor and a first lateral epitaxial resistor coupled in series, and a second set of resistive elements having a second vertical epitaxial resistor and a second lateral epitaxial resistor coupled in series. The first set of resistive elements and the second set of resistive elements can be coupled in parallel. The resistor bridge can be configured to sense a stress value of the Hall effect element.

First claim

What is claimed:

1. An electronic circuit comprising:
a semiconductor substrate,
a resistor bridge disposed upon the semiconductor substrate, the resistor bridge comprising:
a first set of resistive elements having a first vertical epitaxial resistor and a first lateral epitaxial resistor coupled in series; and
a second set of resistive elements having a second vertical epitaxial resistor and a second lateral epitaxial resistor coupled in series; and

an epitaxial layer disposed over the surface of the semiconductor substrate, the epitaxial layer having a first surface distal from the semiconductor substrate and a second surface proximate to the semiconductor substrate, wherein the first and second vertical epitaxial resistors each comprise:
respective first and second pickups implanted upon and diffused into the first surface of the epitaxial layer; and
a respective buried structure disposed under the first surface of the epitaxial layer and under the first and second pickups, wherein each respective first buried structure has a density of atoms that results in a respective first low resistance path with a respective first resistance lower than a resistance of the epitaxial layer, wherein a respective current passes from the first pickup, through a respective first region of the epitaxial layer, through the respective first buried structure, and through a respective second region of the epitaxial layer to the second pickup, wherein the respective current passes through the respective first and second regions of the epitaxial layer in a direction substantially perpendicular to the first surface of the epitaxial layer, and wherein the respective buried structure has a respective first length dimension and a respective first width dimension, the respective first length dimension parallel to the respective first surface of the epitaxial layer,

wherein the first set of resistive elements and the second set of resistive elements are coupled in parallel, and wherein the resistor bridge is operable to generate a differential signal responsive to a stress of the semiconductor substrate.

2. The electronic circuit of claim 1 , wherein each resistive element of the first and second sets of resistive elements have the same temperature coefficient.

3. The electronic circuit of claim 2 , wherein a stress coefficient of the first vertical epitaxial resistor is equal to a stress coefficient of the second vertical epitaxial resistor.

4. The electronic circuit of claim 3 , wherein a stress coefficient of the first lateral epitaxial resistors is equal to a stress coefficient of the second lateral epitaxial resistor.

5. The electronic circuit of claim 4 , wherein stress coefficients of the first and second vertical epitaxial resistors are different from stress coefficients of the first and second lateral epitaxial resistors.

6. The electronic circuit of claim 1 ,
wherein the first and second lateral epitaxial resistors each comprise:
respective first and second pickups implanted upon and diffused into the first surface of the epitaxial layer, wherein a respective current passes from the first pickup, through a respective third region of the epitaxial layer, through a respective fourth region of the epitaxial layer, and through a respective fifth region of the epitaxial layer to the second pickup, wherein the respective current passes through the respective fourth region in a direction substantially parallel to the first surface of the epitaxial layer.

7. The electronic circuit of claim 6 , further comprising a Hall effect element disposed upon the semiconductor substrate and proximate to the resistor bridge, wherein the resistor bridge is configured to sense a stress value of Hall effect element.

8. The electronic circuit of claim 7 , further comprising a compensation circuit disposed upon the semiconductor substrate and coupled to the resistor bridge and operable to generate a compensation signal, wherein the compensation circuit is configured to receive the differential signal from the resistor bridge.

9. The electronic circuit of claim 8 , further comprising an amplifier disposed upon the semiconductor substrate and coupled to the Hall effect element and the compensation circuit and operable to generate an amplified signal, wherein the amplifier is operable to change gain of the amplified signal depending upon a value of the compensation signal.

10. The electronic circuit of claim 7 , further comprising:
an amplifier disposed upon the semiconductor substrate and coupled to the Hall effect element and operable to generate an amplified signal;
a first analog-to-digital converter disposed upon the semiconductor substrate and coupled to receive the amplified signal from the amplifier and operable to generate a first digital signal;
a processor disposed upon the semiconductor substrate and coupled to receive the first digital signal and operable to generate a processed signal wherein the processed single has a gain with respect to the first digital signal; and
a second analog-to-digital converter disposed upon the semiconductor substrate, coupled to the resistor bridge and operable to generate a second digital signal responsive to the differential signal, wherein the processor is further coupled to receive the second digital signal and operable to change the gain with respect to the first digital signal to generate the processed signal.

11. The electronic circuit of claim 8 , further comprising:
a current generator operable to generate a drive current that passes through the Hall effect element, wherein the compensation circuit is coupled to the current generator and operable to provide the compensation signal to the current generator.

12. An electronic circuit comprising:
a semiconductor substrate;
a Hall effect element disposed upon the semiconductor substrate;
a resistor bridge disposed upon the semiconductor substrate and proximate to the Hall effect element, the resistor bridge comprising:
a first set of resistive elements having a first vertical epitaxial resistor and a first lateral epitaxial resistor coupled in series; and
a second set of resistive elements having a second vertical epitaxial resistor and a second lateral epitaxial resistor coupled in series,
wherein the first set of resistive elements and the second set of resistive elements are coupled in parallel, and wherein the resistor bridge is operable to sense a stress value of the semiconductor substrate and the Hall effect element, and wherein the resistor bridge is operable to generate a differential signal responsive to the stress value of the semiconductor substrate and the Hall effect element; and

an epitaxial layer disposed over the surface of the semiconductor substrate, the epitaxial layer having a first surface distal from the semiconductor substrate and a second surface proximate to the semiconductor substrate, wherein the first and second vertical epitaxial resistors each comprise:
respective first and second pickups implanted upon and diffused into the first surface of the epitaxial layer; and
a respective buried structure disposed under the first surface of the epitaxial layer and under the first and second pickups, wherein each respective first buried structure has a density of atoms that results in a respective first low resistance path with a respective first resistance lower than a resistance of the epitaxial layer, wherein a respective current passes from the first pickup, through a respective first region of the epitaxial layer, through the respective first buried structure, and through a respective second region of the epitaxial layer to the second pickup, wherein the respective current passe

Assignees

• Allegro Microsystems Llc

Inventors

• Cesaretti Juan Manuel

Classifications

• H10P14/40

  of conductive or resistive materials · CPC title

• H01L43/065

  Electricity · mapped topic

• H01L28/20

  Electricity · mapped topic

• G01L1/2262

  involving simple electrical bridges · CPC title

• H01L27/22

  Electricity · mapped topic