Liquid mixture and method for selectively wet etching silicon germanium

Patent metadata

Field	Value
Publication number	US-10106737-B2
Application number	US-201715466779-A
Country	US
Kind code	B2
Filing date	Mar 22, 2017
Priority date	Mar 22, 2017
Publication date	Oct 23, 2018
Grant date	Oct 23, 2018

Abstract

A liquid mixture for etching a substrate includes a first liquid comprising one of: (i) percarboxylic acid comprising 3 to 70 mass. % of the liquid mixture; or (ii) carboxylic acid comprising 3 to 70 mass. % of the liquid mixture and at least one liquid selected from a group consisting of hydrogen peroxide comprising 3 to 30 mass. % of the liquid mixture and ozone comprising 0.5 to 5 mass. % of the liquid mixture; a water drawing agent comprising 2 to 40 mass. % of the liquid mixture; hydrofluoric acid comprising 0.05 to 3 mass. % of the liquid mixture; and water comprising 0 to 60 mass. % of the liquid mixture. The liquid mixture may be used to etch silicon germanium relative to silicon, silicon dioxide and silicon nitride.

First claim

What is claimed is:

1. A liquid mixture for etching a substrate, comprising:
a first liquid comprising carboxylic acid comprising 3 to 12 mol/L of the liquid mixture and hydrogen peroxide comprising 1.5 to 7 mol/L of the liquid mixture;
sulfuric acid comprising 0.5 to 5 mol/L of the liquid mixture;
hydrofluoric acid comprising 0.1 to 1 mol/L of the liquid mixture; and
water comprising 4 to 40 mol/L of the liquid mixture.

2. The liquid mixture of claim 1 , wherein the carboxylic acid comprises acetic acid.

3. The liquid mixture of claim 1 , wherein the carboxylic acid comprises 7.6 mol/L of the liquid mixture.

4. The liquid mixture of claim 1 , wherein the hydrogen peroxide comprises 4.3 mol/L of the liquid mixture.

5. The liquid mixture of claim 1 , wherein the sulfuric acid comprises 2.15 mol/L of the liquid mixture.

6. The liquid mixture of claim 1 , wherein the hydrofluoric acid comprises 0.13 mol/L of the liquid mixture.

7. The liquid mixture of claim 1 , wherein the water comprises 20 mol/L of the liquid mixture.

8. A method for wet etching a substrate, comprising:
providing a substrate comprising silicon germanium, silicon and at least one material selected from a group consisting of silicon dioxide and silicon nitride; and
selectively etching the silicon germanium relative to the silicon and the at least one material by applying the liquid mixture of claim 1 to the substrate.

9. A method for wet etching a substrate, comprising:
providing a substrate comprising silicon germanium and at least one material selected from a group consisting of silicon, silicon dioxide and silicon nitride; and
selectively etching the silicon germanium relative to the at least one material by applying the liquid mixture of claim 1 to the substrate.

10. The method of claim 9 , wherein the substrate includes nanowires that are exposed after etching of the silicon germanium.

11. A method for wet etching a substrate, comprising:
arranging the substrate on a spin chuck, wherein the substrate comprises silicon germanium and at least one material selected from a group consisting of silicon, silicon dioxide and silicon nitride;
rotating the substrate using the spin chuck; and
applying the liquid mixture of claim 1 onto at least one surface of the substrate to selectively etch the silicon germanium relative to the at least one material by applying the liquid mixture.

12. The method of claim 11 , wherein the silicon germanium is etched at a ratio greater than or equal to 10:1 relative to the at least one material selected from a group consisting of silicon, silicon dioxide and silicon nitride.

13. The method of claim 11 , wherein the silicon germanium is etched at a ratio greater than or equal to 10:1 relative to the silicon material, the silicon dioxide material and the silicon nitride material.

14. A liquid mixture for etching silicon germanium comprising:
carboxylic acid comprising 3 to 12 mol/L of the liquid mixture;
hydrogen peroxide comprising 1.5 to 7 mol/L of the liquid mixture;
sulfuric acid 0.5 to 5 mol/L of the liquid mixture;
hydrofluoric acid comprising 0.1 to 1 mol/L of the liquid mixture; and
water comprising 4 to 50 mol/L of the liquid mixture.

15. The liquid mixture of claim 14 , wherein a molarity of the carboxylic acid is higher than a molarity of hydrogen peroxide.

16. A method for wet etching a substrate, comprising:
providing a substrate comprising silicon germanium, silicon and at least one material selected from a group consisting of silicon dioxide and silicon nitride; and
selectively etching the silicon germanium relative to the at least one material using the liquid mixture of claim 14 .

Assignees

• Lam Res Ag

Inventors

• Dictus Dries
• Fischer Christian

Classifications

• H10P50/667

  by liquid etching only · CPC title

• H10P50/644

  Anisotropic liquid etching (H10P50/61 takes precedence) · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10D30/43

  having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels · CPC title

• H10D30/014

  of FETs having zero-dimensional [0D] or one-dimensional [1D] channels, e.g. quantum wire FETs, single-electron transistors [SET] or Coulomb blockade transistors · CPC title