Safe and low temperature thermite reaction systems and method to form porous silicon
US-2018237305-A1 · Aug 23, 2018 · US
US10106424B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10106424-B2 |
| Application number | US-201615200282-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 1, 2016 |
| Priority date | Nov 13, 2015 |
| Publication date | Oct 23, 2018 |
| Grant date | Oct 23, 2018 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method of preparing silicon using silica includes placing silica in a reaction chamber; adding a reducing agent into the reaction chamber; feeding a material for impact into the reaction chamber and sealing the reaction chamber; and reducing the silica to silicon by allowing the material for impact to generate a physical impact inside the reaction chamber. The preparation method of silicon using silica does not employ a high-temperature high-pressure process and provides a preparation method of silicon by which the porous structure of the silica before a reduction reaction is maintained within the silicon even after the reaction.
Opening claim text (preview).
What is claimed is: 1. A method of preparing silicon using silica, the method comprising: placing silica in a reaction chamber; adding a reducing agent into the reaction chamber; feeding a material for impact into the reaction chamber and sealing the reaction chamber; and reducing the silica to silicon by allowing the material for impact to generate a physical impact inside the reaction chamber, wherein the reduction of silica is terminated after an observation of a dramatic change in pressure in the reaction chamber, wherein the dramatic change in pressure is a 1.5-fold to 20-fold increase followed by a decrease of the pressure inside the reaction chamber. 2. The Method of claim 1 , wherein the silica is plant-derived silica. 3. The method of claim 2 , wherein the silica is chaff-derived silica. 4. The method of claim 3 , wherein the chaff-derived silica is acquired by heat-treating chaff at a temperature in the range of 500°C. to 700°C. for a period ranging from 30 minutes to 300 minutes under an oxygen or air atmosphere. 5. The method of claim 1 , wherein the reducing agent includes at least one selected from the group consisting of sodium (Na), magnesium (Mg), calcium (Ca), potassium (K), manganese(Mn), iron (Fe), boron (B), aluminum (Al), titanium (Ti), and a mixture thereof. 6. The method of claim 1 , wherein the reducing agent is added at 0.7 to 1.5 equivalent weights with respect to 1 equivalent weight of the silica. 7. The method of claim 1 , further comprising: pressurizing the reaction chamber after the sealing of the reaction chamber so that the internal pressure thereof is in the range of 1 bar to 100 bar. 8. The method of claim 1 , wherein the physical impact is generated by a linear motion or rotary motion of the material for impact inside the reaction chamber caused by a rotation of the reaction chamber. 9. The method of claim 1 , further comprising: acquiring reaction products from the reaction chamber and treating the reaction products with an acid after the reduction of silica. 10. The method or claim 9 , wherein the treating the reaction products with an acid is carried out for 30 minutes to 200 minutes at a temperature in the range of 60° C. to 80° C. by adding an acid having pH in the range of 0.01 to less than 7.0.
by reduction of silica or {free} silica-containing material · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.