Component with reduced stress forces in the substrate

Patent metadata

Field	Value
Publication number	US-10103320-B2
Application number	US-201615146498-A
Country	US
Kind code	B2
Filing date	May 4, 2016
Priority date	May 4, 2016
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A component with a magnetic field sensor. The electronic component is located in a semiconductor substrate or on the surface of the semiconductor substrate and is surrounded at least partially, preferably largely, by a trench in the semiconductor substrate. The trench is filled with a filling material.

First claim

What is claimed is:

1. A component comprising:
a semiconductor substrate with a surface;
a magnetic field sensor; and
a trench filled with a filling material in the semiconductor substrate, said trench surrounding the magnetic field sensor at least partially, wherein the filling material is a buffer material for absorbing mechanical stresses; and
a cap covering the trench and the magnetic field sensor, wherein the cap encloses an air volume in a cavity between the trench and the magnetic field sensor.

2. The component according to claim 1 , wherein the surface has a buffer layer.

3. The component according to claim 1 , wherein the trench surrounds the magnetic field sensor largely, in order to form an island, and further has a connecting bridge.

4. The component according to claim 3 , further comprising conductor paths, diffusions or bonding connections, which contact the electronic connections of the magnetic field sensor and are guided over the connecting bridge.

5. The component according to claim 1 , wherein the magnetic field sensor is integrated in the semiconductor substrate.

6. The component according to claim 1 , wherein the magnetic field sensor is a Hall sensor.

7. The component according to claim 1 , wherein the trench has a depth which is at least 5 μm or one twentieth of the diagonal of the magnetic field sensor.

8. The component according to claim 1 , wherein the trench penetrates the semiconductor substrate fully.

9. The component according to claim 1 , wherein the width of the trench is less than 100 μm.

10. The component according to claim 1 , wherein the filling material is a polymer or polyimide.

11. The component according to claim 1 , wherein the surface of the trench has an encapsulation layer.

12. The component according to claim 11 , wherein the encapsulation layer is a nitride.

13. The component according to claim 1 , wherein the trench is produced by laser removal.

14. A construction element with a component comprising a semiconductor substrate with a surface; a magnetic field sensor; and a trench filled with a filling material in the semiconductor substrate, said trench surrounding the magnetic field sensor at least partially, comprising a further component that is surrounded at least partially by the trench, wherein the filling material is a buffer material for absorbing mechanical stresses, and wherein the trench and the magnetic field sensor are covered with a cap, wherein the cap encloses an air volume in a cavity between the trench and the magnetic field sensor.

15. The construction element according to claim 14 , wherein the further component is a circuitry component for controlling the magnetic field sensor.

16. The construction element according to claim 14 , wherein the further component is a circuitry component for capturing the data from the magnetic field sensor.

Assignees

• Micronas Gmbh
• Tdk Micronas Gmbh

Inventors

• Baumann Marc
• Rubehn Thilo
• Joos Christian
• Stephan Jochen

Classifications

• H01L43/14

  Electricity · mapped topic

• H01L43/04

  Electricity · mapped topic

• H01L43/065 Primary

  Electricity · mapped topic

• H10N52/80 Primary

  Constructional details · CPC title

• H10N52/01

  Manufacture or treatment · CPC title