Method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device

Patent metadata

Field	Value
Publication number	US-10103296-B2
Application number	US-201515515766-A
Country	US
Kind code	B2
Filing date	Oct 1, 2015
Priority date	Oct 2, 2014
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A method for producing optoelectronic semiconductor devices and an optoelectronic semiconductor device are disclosed. In an embodiment, the method includes providing a plurality of semiconductor chips for producing electromagnetic radiation, arranging the plurality of semiconductor chips in a plane, forming a housing body composite, at least some regions of which are arranged between the semiconductor chips, forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips, encapsulating the plurality of conversion elements at least on their lateral edges by an encapsulation material, and separating the housing body composite into a plurality of optoelectronic semiconductor components.

First claim

The invention claimed is:

1. A method for producing a plurality of optoelectronic semiconductor devices, the method comprising:
a) providing a plurality of semiconductor chips for generating electromagnetic radiation;
b) arranging the plurality of semiconductor chips in a plane, wherein the semiconductor chips are spaced from one another in a lateral direction;
c) forming a package body assembly arranged at least in part between the semiconductor chips;
d) forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips;
e) encapsulating the plurality of conversion elements at least at lateral edges thereof with an encapsulation material which differs from the conversion material; and
f) singulating the package body assembly into the plurality of optoelectronic semiconductor devices,
wherein each semiconductor device comprises at least one semiconductor chip, one laterally encapsulated conversion element and one part of the package body assembly as a package body,
wherein step d) is performed before step b), before step c) or before step e), and
wherein the semiconductor chips are molded over in step c) and the package body assembly is then thinned such that the semiconductor chips are exposed in places.

2. The method according to claim 1 , wherein the conversion material comprises wavelength-converting quantum dots.

3. The method according to claim 2 , wherein the plurality of conversion elements are formed by singulating a conversion foil, which comprises the conversion material.

4. The method according to claim 3 , wherein the conversion foil is secured to the package body assembly and the semiconductor chips and is then cut through by trenches in such a way that one conversion element is formed on each semiconductor chip, and wherein the conversion elements are encapsulated with the encapsulation material at least in regions of the trenches.

5. The method according to claim 4 , wherein the conversion elements are encapsulated by a coating process or by a casting process.

6. The method according to claim 3 , wherein first the conversion foil is singulated into conversion elements and the conversion elements are formed on the semiconductor chips, and wherein the package body assembly is then formed in such a way that it encapsulates the plurality of conversion elements at least at the lateral edges.

7. The method according to claim 2 , wherein, in step b), the plurality of semiconductor chips are secured to an auxiliary carrier, wherein the semiconductor chips are spaced from one another in a lateral direction, and wherein the auxiliary carrier is removed after step c) or after a subsequent method step.

8. The method according to claim 2 , wherein, in step b), the plurality of semiconductor chips are secured to a structured metal composite, and wherein, once step f) has been performed, each semiconductor device comprises at least one part of the structured metal composite as leadframe.

9. The method according to claim 2 , wherein the conversion elements are encapsulated on a front surface thereof with the encapsulation material, and wherein the encapsulation material is transparent.

10. The method according to claim 1 , wherein the package body assembly is formed in step c) by compression molding or by film assisted transfer molding.

11. An optoelectronic semiconductor device comprising:
a semiconductor chip configured to generate electromagnetic radiation;
a package body surrounding the semiconductor chip in a lateral direction;
a conversion element comprising a wavelength-converting conversion material, wherein the conversion element is arranged on the semiconductor chip;
an encapsulation arranged at least at a lateral edge of the conversion element, wherein the encapsulation comprises an encapsulation material which differs from the conversion material;
side faces of the package body exhibiting traces of singulation; and
two contacts on a back surface for contacting the semiconductor chip,
wherein the conversion element is a singulated part of a conversion foil comprising the conversion material, and
wherein the conversion element covers in top view an electromagnetic radiation emitting surface of the semiconductor chip, the contacts and partially the package body without covering the side faces of the package body.

12. The optoelectronic semiconductor device according to claim 11 , wherein at least one side face of the encapsulation and at least one side face of the package body terminate flush with one another.

13. The optoelectronic semiconductor device according to claim 11 , further comprising a leadframe, wherein the two contacts are formed on the back surface of the semiconductor device by parts of the leadframe, and wherein the leadframe is exposed in places at least one side face of the semiconductor device.

14. A method for producing a plurality of optoelectronic semiconductor devices, the method comprising:
a) providing a plurality of semiconductor chips for generating electromagnetic radiation;
b) arranging the plurality of semiconductor chips in a plane, wherein the semiconductor chips are spaced from one another in a lateral direction;
c) forming a package body assembly arranged at least in part between the semiconductor chips;
d) forming a plurality of conversion elements, wherein each conversion element comprises a wavelength-converting conversion material and is arranged on one of the semiconductor chips;
e) encapsulating the plurality of conversion elements at least at lateral edges thereof with an encapsulation material which differs from the conversion material; and
f) singulating the package body assembly into the plurality of optoelectronic semiconductor devices, wherein each semiconductor device comprises at least one semiconductor chip, one laterally encapsulated conversion element and one part of the package body assembly as package body, wherein step d) is performed before step b), before step c) or before step e), and wherein the plurality of conversion elements are formed by singulating a conversion foil, which comprises the conversion material.

15. The method according to claim 14 , wherein the conversion foil is secured to the package body assembly and the semiconductor chips and is then cut through by trenches in such a way that one conversion element is formed on each semiconductor chip, and wherein the conversion elements are encapsulated with the encapsulation material at least in regions of the trenches.

Assignees

• Osram Opto Semiconductors Gmbh
• Osram Opto Semiconductors Gmbh

Inventors

• Singer Frank
• Goeoetz Britta
• Racz David
• Sperl Matthias

Classifications

• H10W72/0198

  batch processes · CPC title

• H10W70/60

  Insulating or insulated package substrates; Interposers; Redistribution layers (leadframes H10W70/40) · CPC title

• H01L33/486

  Electricity · mapped topic

• H01L2933/005

  Electricity · mapped topic

• H01L2933/0041

  Electricity · mapped topic