Statistical model-based metrology

Patent metadata

Field	Value
Publication number	US-10101670-B2
Application number	US-201414223045-A
Country	US
Kind code	B2
Filing date	Mar 24, 2014
Priority date	Mar 27, 2013
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

Methods and systems for creating a measurement model based on measured training data are presented. The trained measurement model is used to calculate process parameter values, structure parameter values, or both, directly from measured data collected from other wafers. The measurement models receive measurement data directly as input and provide process parameter values, structure parameter values, or both, as output. The measurement model enables the direct measurement of process parameters. Measurement data from multiple targets is collected for model building, training, and measurement. In some examples, the use of measurement data associated with multiple targets eliminates, or significantly reduces, the effect of under layers in the measurement result, and enables more accurate measurements. Measurement data collected for model building, training, and measurement, may be derived from measurements performed by a combination of multiple, different measurement techniques.

First claim

What is claimed is:

1. A method comprising:
illuminating a first plurality of measurement sites of one or more semiconductor wafers with illumination light generated by an illumination source, the first plurality of measurement sites having known variations of at least one process parameter, structural parameter, or both;
detecting light collected from each of the first plurality of measurement sites in response to the illumination light with a spectrometer;
generating a measured spectral response of each of the plurality of measurement sites from the light detected by the spectrometer in accordance with at least one metrology technique, the measured spectral response comprising a first amount of measurement data;
determining an expected response model of each of the at least one known process parameters, structure parameters, or both;
determining an input-output measurement model based at least in part on the first amount of measurement data;
training the input-output measurement model based on parameter values determined from the expected response model;
receiving a second amount of measurement data associated with measurements of a second plurality of sites using the at least one metrology technique;
determining at least one process parameter value, at least one structural parameter value, or both, associated with each of the second plurality of sites based on a fitting of the second amount of measurement data to the trained input-output measurement model; and
communicating an indication of the at least one process parameter value, the at least one structural parameter value, or both, to a semiconductor fabrication tool that causes the semiconductor fabrication tool to adjust one or more parameters of a fabrication process of the semiconductor fabrication tool to achieve a desired output from the fabrication tool.

2. The method of claim 1 , further comprising:
storing any of the at least one process parameter value, the at least one structural parameter value, or both, in a memory.

3. The method of claim 1 , wherein the first amount of measurement data is associated with measurements of a first plurality of sites with known variations of focus and exposure dosage over the surface of the semiconductor wafer.

4. The method of claim 1 , further comprising:
extracting one or more features of the first amount of measurement data by reducing a dimension of the first amount of measurement data, and wherein the determining the input-output measurement model is based at least in part on the one or more features.

5. The method of claim 4 , wherein the reducing the dimension of the first amount of measurement data involves any of a principal components analysis, a non-linear principal components analysis, a selection of individual signals from the first amount of measurement data, and a filtering of the first amount of measurement data.

6. The method of claim 1 , wherein the expected response model is a wafer map model, and wherein the determining the wafer map model involves fitting a two dimensional map function to the known process parameters, structure parameters, or both, associated with the first plurality of sites.

7. The method of claim 1 , further comprising:
determining the at least one known structure parameter based at least in part on a simulation of a process performed on the semiconductor wafer.

8. The method of claim 1 , further comprising:
determining the at least one known structure parameter based at least in part on an amount of reference measurement data associated with the at least one known structure parameter.

9. The method of claim 1 , wherein the first amount of measurement data includes measurement signals associated with more than one target feature at any of the first plurality of sites.

10. The method of claim 1 , wherein the first amount of measurement data includes measurement signals associated with more than one metrology technique.

11. A system comprising:
an illuminator that provides illumination light to a first plurality of measurement sites disposed on a surface of a semiconductor wafer, the first plurality of measurement sites having known variations of at least one process parameter, structural parameter, or both;
a spectrometer that detects light collected from each of the first plurality of measurement sites of the semiconductor wafer in response to the illumination light provided to the semiconductor wafer and generates a measured spectral response of each of the plurality of measurement sites of the semiconductor wafer from the detected light in accordance with at least one metrology technique, the measured spectral response comprising a first amount of measurement data; and
a computing system configured to:
determine an expected response model of each of the at least one known process parameters, structure parameters, or both;
determine an input-output measurement model based at least in part on the first amount of measurement data;
train the input-output measurement model based on parameter values determined from the expected response model;
receive a second amount of measurement data associated with measurements of a second plurality of sites;
determine at least one process parameter value, at least one structural parameter value, or both, associated with each of the second plurality of sites based on a fitting of the second amount of measurement data to the trained input-output measurement model; and
communicate an indication of the at least one process parameter value, the at least one structural parameter value, or both, to a semiconductor fabrication tool that causes the semiconductor fabrication tool to adjust one or more parameters of a fabrication process of the semiconductor fabrication tool to achieve a desired output from the fabrication tool.

12. The system of claim 11 , wherein the computing system is further configured to:
store any of the at least one process parameter value, the at least one structural parameter value, or both, in a memory.

13. The system of claim 11 , wherein the computing system is further configured to:
extract one or more features of the first amount of measurement data by reducing a dimension of the first amount of measurement data, and wherein the determining the input-output measurement model is based at least in part on the one or more features.

14. The system of claim 13 , wherein the reducing the dimension of the first amount of measurement data involves any of a principal components analysis, a non-linear principal components analysis, a selection of individual signals from the first amount of measurement data, and a filtering of the first amount of measurement data.

15. The system of claim 11 , wherein the expected response model is a wafer map model, and wherein the determining the wafer map model involves fitting a two dimensional map function to the known process parameters, structure parameters, or both, associated with the first plurality of sites.

16. The system of claim 11 , wherein the first amount of measurement data includes measurement signals associated with more than one target feature at any of the first plurality of sites.

17. The system of claim 11 , wherein the first amount of measurement data includes measurement signals associated with more than one metrology technique.

18. A method comprising:
illuminating a first plurality of measurement sites on one or more semiconductor wafers with illumination light generated by an illumination source, the first plurality of measurement sites having known variations of at least one process

Assignees

• Kla Tencor Corp

Inventors

• Pandev Stilian Ivanov
• Madsen Jonathan M

Classifications

• H10P74/203

  Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects · CPC title

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• G03F7/70641

  Focus · CPC title

• G03F7/70558 Primary

  Dose control, i.e. achievement of a desired dose · CPC title

• H01L22/20

  Electricity · mapped topic