Methods of forming patterns of semiconductor devices

Patent metadata

Field	Value
Publication number	US-10101660-B2
Application number	US-201615345910-A
Country	US
Kind code	B2
Filing date	Nov 8, 2016
Priority date	Nov 11, 2015
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

In a method of forming patterns, an object layer is formed on a substrate. Guide patterns are formed on the object layer. A brush layer is formed using a brush polymer on surfaces of the guide patterns. The brush polymer includes at least one of a first brush polymer and a second brush polymer. The first brush polymer includes a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups. The second brush polymer includes a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group. A self-aligned layer is formed using a block copolymer on the brush layer to form blocks aligned around the guide patterns. At least a portion of the blocks is transferred to the object layer.

First claim

What is claimed is:

1. A method of forming patterns, the method comprising:
forming an object layer on a substrate;
forming guide patterns on the object layer;
forming a brush layer using a brush polymer on surfaces of the guide patterns, the brush polymer including at least one of a first brush polymer or a second brush polymer, the first brush polymer including a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups, the second brush polymer including a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group, wherein the hydrophobic repeating unit of the first and second brush polymers includes a styrene unit represented by Chemical Formula 1:

wherein, in Chemical Formula 1, R 1 is hydrogen, a C1-C6 alkyl group, or a C1-C6 halogenated alkyl group, R 2 is a halogen atom, an oxygen atom, a C1-C20 alkyl group or a cycloalkyl group, or a C1-C20 alkyl group or a cycloalkyl group including a halogen substitution group or being partially substituted with a silicon atom, and n is an integer of 0 and 5;

forming a self-aligned layer using a block copolymer on the brush layer and heating the self-aligned layer to form blocks aligned around the guide patterns, wherein the block copolymer includes a first polymer unit and a second polymer unit, the first polymer unit being assembled into first blocks arranged in a grid shape or a honeycomb shape around the guide patterns, the second polymer unit being assembled into second blocks contacting the brush layer and surrounding sidewalls of the first blocks;
removing the first blocks; and
etching the object layer.

2. The method as claimed in claim 1 , wherein the hydrophilic terminal group having at least two hydroxyl groups is represented by Chemical Formula 2:

wherein, in Chemical Formula 2, R 4 is hydrogen, a C1-C6 alkyl group, or a C1-C6 halogenated alkyl group,
R 3 is a halogen atom, an oxygen atom, a C1-C20 alkyl group or a cycloalkyl group, or a C1-C20 alkyl group or a cycloalkyl group including a halogen substitution group or being partially substituted with a silicon atom,
R 5 is a hydroxyl group or hydrogen, and
n is an integer of 0 and 5.

3. The method as claimed in claim 2 , wherein the first brush polymer is represented by Chemical Formula 3:

wherein, in Chemical Formula 3, x is an integer adjusted such that a weight average molecular weight of the first brush polymer is of about 1,000 to about 100,000.

4. The method as claimed in claim 1 , wherein the hydrophilic random repeating unit is represented by Chemical Formula 4:

wherein, in Chemical Formula 4, R 6 is hydrogen, a C1-C6 alkyl group, or a C1-C6 halogenated alkyl group, and
R 7 is C1-C5 alkylene.

5. The method as claimed in claim 4 , wherein the second brush polymer includes a moiety represented by Chemical Formula 5:

wherein, in Chemical Formula 5, “a” and “b” represent molar ratios, and a/b is of about 94/6 to about 99/1.

6. The method as claimed in claim 1 , wherein the first polymer unit includes polymethylmethacrylate (PMMA), and the second polymer unit includes polystyrene (PS),
wherein an outer surface of the brush layer includes PS.

7. The method as claimed in claim 1 , wherein the self-aligned layer is formed using a blend of the block copolymer and homopolymers.

8. The method as claimed in claim 7 , wherein the homopolymers include a first homopolymer including the first polymer unit, and a second homopolymer including the second polymer unit.

9. The method as claimed in claim 1 , wherein the self-aligned layer is formed using a blend of the block copolymer and an additional block copolymer having a weight average molecular weight less than that of the block copolymer,
wherein the additional block copolymer includes the first polymer unit and the second polymer unit, each of which has a weight average molecular weight of about 1,000 to about 10,000.

10. A method of forming patterns, the method comprising:
forming an object layer on a substrate;
forming guide patterns on the object layer;
forming a brush layer using a brush polymer on surfaces of the guide patterns, the brush polymer including at least one of a first brush polymer or a second brush polymer, the first brush polymer including a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups, the second brush polymer including a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group;
forming a self-aligned layer using a block copolymer on the brush layer and heating the self-aligned layer to form blocks aligned around the guide patterns, wherein the block copolymer includes a first polymer unit and a second polymer unit, the first polymer unit being assembled into first blocks arranged in a grid shape or a honeycomb shape around the guide patterns, the second polymer unit being assembled into second blocks contacting the brush layer and surrounding sidewalls of the first blocks;
removing the first blocks; and
etching the object layer,
wherein the brush polymer includes a blend of the first brush polymer and the second brush polymer.

11. A method of forming patterns, the method comprising:
forming an object layer on a substrate;
forming guide patterns on the object layer;
forming a brush layer using a brush polymer on surfaces of the guide patterns, the brush polymer including at least one of a first brush polymer or a second brush polymer, the first brush polymer including a hydrophobic repeating unit and a hydrophilic terminal group having at least two hydroxyl groups, the second brush polymer including a hydrophobic repeating unit and a hydrophilic random repeating unit having a hydroxyl group;
forming a self-aligned layer using a block copolymer on the brush layer and heating the self-aligned layer to form blocks aligned around the guide patterns, wherein the block copolymer includes a first polymer unit and a second polymer unit, the first polymer unit being assembled into first blocks arranged in a grid shape or a honeycomb shape around the guide patterns, the second polymer unit being assembled into second blocks contacting the brush layer and surrounding sidewalls of the first blocks;
removing the first blocks; and
etching the object layer,
wherein the brush polymer includes a polymer in which the first brush polymer and the second brush polymer are incorporated in a single structure.

12. A method of forming patterns, the method comprising:
forming an object layer on a substrate;
forming guide patterns on the object layer;
forming a brush layer covering surfaces of the guide patterns;
forming a self-aligned layer on the brush layer using a blend, the blend including:
a lamellar-type block copolymer including a first polymer unit and a second polymer unit;
a first homopolymer including the first polymer unit; and
a second homopolymer including the second polymer unit;

thermally curing the self-aligned layer to form first blocks including the first polymer unit and a second

Assignees

• Park Jeong Ju
• Kwon Seung Chul
• Kim Eun Sung
• Lee Kyeong Mi
• Yi Shi Yong
• KUROSAWA Tsuyosh
• Ohmori Katsumi
• Matsumiya Tasuku
• Samsung Electronics Co Ltd
• Tokyo Ohka Kogyo Co Ltd

Inventors

• Park Jeong-Ju
• Kwon Seung-Chul
• Kim Eun-Sung
• LEE Kyeong-Mi
• Yi Shi-Yong
• KUROSAWA Tsuyosh
• Ohmori Katsumi
• Matsumiya Tasuku

Classifications

• H10P76/4085 Primary

  characterised by the processes involved to create the masks · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P50/71

  using masks for conductive or resistive materials · CPC title

• B82Y40/00

  Manufacture or treatment of nanostructures · CPC title

• G03F7/2022

  Multi-step exposure, e.g. hybrid; backside exposure; blanket exposure, e.g. for image reversal; edge exposure, e.g. for edge bead removal; corrective exposure · CPC title