Method of forming fine pattern and method of manufacturing integrated circuit device using the method

Patent metadata

Field	Value
Publication number	US-9704722-B2
Application number	US-201514958072-A
Country	US
Kind code	B2
Filing date	Dec 3, 2015
Priority date	Dec 15, 2014
Publication date	Jul 11, 2017
Grant date	Jul 11, 2017

Abstract

A method of forming a fine pattern includes forming pillar-shaped guides regularly arranged on a feature layer, forming a block copolymer layer on the feature layer around the pillar-shaped guides, phase separating the block copolymer layer, forming first domains regularly arranged on the feature layer with the pillar-shaped guides, forming a second domain on the feature layer surrounding the pillar-shaped guides and the first domains, removing the first domains, and forming holes corresponding with the first domains in the feature layer by etching the feature layer using the pillar-shaped guides and the second domain as etch masks. The block copolymer layer includes a polymer blend having first and second polymer blocks having first and second repeat units, respectively, a first homopolymer and a second homopolymer. The first domains include the first polymer block and the first homopolymer, and the second domain includes the second polymer block and the second homopolymer.

First claim

What is claimed is:

1. A method of forming a pattern, the method comprising:
forming a plurality of pillar-shaped guides on a feature layer, the plurality of pillar-shaped guides being regularly arranged;
forming a block copolymer layer on the feature layer around the plurality of pillar-shaped guides, the block copolymer layer being made of a polymer blend including a pure block copolymer and a plurality of homopolymers, the pure block copolymer including a first polymer block having a first repeat unit and a second polymer block having a second repeat unit, the plurality of homopolymers including a first homopolymer and a second homopolymer;
phase separating the block copolymer layer including,
forming a plurality of first domains regularly arranged on the feature layer with the plurality of pillar-shaped guides, the plurality of first domains including the first polymer block and the first homopolymer, and
forming a second domain on the feature layer surrounding the plurality of pillar-shaped guides and the plurality of first domains, the second domain including the second polymer block and the second homopolymer;

removing the plurality of first domains; and
forming a plurality of holes corresponding with the plurality of first domains in the feature layer by etching the feature layer using the plurality of pillar-shaped guides and the second domain as etch masks.

2. The method of claim 1 , wherein the forming a block copolymer layer forms the first homopolymer having the first repeat unit and the second homopolymer having the second repeat unit.

3. The method of claim 1 , wherein the forming a block copolymer layer forms each of the first homopolymer and the second homopolymer having a molecular weight ranging from about 1,000 g/mol to about 10,000 g/mol.

4. The method of claim 1 , wherein the forming a block copolymer layer includes coating the polymer blend on the feature layer, the polymer blend including the pure block copolymer and the plurality of homopolymers mixed at a weight ratio ranging from about 50:50 to about 95:5.

5. The method of claim 4 , wherein
the forming a block copolymer layer forms the first homopolymer having the first repeat unit and the second homopolymer having the second repeat unit, and
wherein the coating the polymer blend coats the first homopolymer and the second homopolymer having a weight ratio ranging from about 30:70 to about 50:50.

6. The method of claim 4 , wherein the forming a block copolymer layer forms the first polymer block and the second polymer block having a volume ratio ranging from about 20:80 to about 40:60.

7. The method of claim 1 , wherein the forming a block copolymer layer forms the first polymer block including one of poly(methyl methacrylate) (PMMA), poly(ethylene oxide) (PEO), poly(lactic acid) (PLA), and polyisoprene (PI), and the second polymer block including polystyrene (PS).

8. The method of claim 1 , wherein the forming a plurality of pillar-shaped guides forms the plurality of pillar-shaped guides having a material including silicon (Si).

9. The method of claim 1 , wherein the forming a plurality of pillar-shaped guides forms the plurality of pillar-shaped guides having a width in a range from about 0.5 to about 1.5 times a bulk period L 0 of the block copolymer layer, and the bulk period L 0 of the block copolymer layer ranging from about 40 nm to about 60 nm.

10. The method of claim 1 , wherein the forming a plurality of pillar-shaped guides forms the plurality of pillar-shaped guides arranged in a hexagonal array having a first pitch that is 1.73 times a bulk period L 0 of the block copolymer layer, and the bulk period L 0 of the block copolymer layer ranging from about 40 to about 60 nm.

11. The method of claim 1 , wherein the forming a plurality of pillar-shaped guides forms the plurality of pillar-shaped guides having a first pitch that is N times (N being an integer equal to or greater than 2, and the bulk period L 0 of the block copolymer layer ranging from about 40 nm to about 60 nm.

12. The method of claim 1 , wherein
the forming a plurality of pillar-shaped guides forms the plurality of pillar-shaped guides regularly arranged to have a first pitch, and
the phase separating the block copolymer layer arranges the plurality of first domains in a cylindrical shape at a central portion between at least two pillar-shaped guides of the plurality of pillar-shaped guides, and the plurality of pillar-shaped guides and the plurality of first domains are regularly arranged to have a second pitch, the second pitch being less than the first pitch.

13. The method of claim 1 , prior to the forming a block copolymer layer, the method further comprising:
forming an organic liner covering exposed surfaces of the plurality of pillar-shaped guides after the forming a plurality of pillar-shaped guides.

14. The method of claim 13 , wherein the forming an organic liner forms the organic liner having a random copolymer including a first block having the first repeat unit, a second block having the second repeat unit, and a third block having a repeat unit including a primary hydroxyl group.

15. The method of claim 14 , wherein the forming an organic liner forms the organic liner having the random copolymer including the third block in an amount ranging from about 0.01 weight % to about 10 weight % based on a total weight of the random copolymer.

16. The method of claim 14 , wherein the forming an organic liner attaches the random copolymer to the exposed surfaces of the plurality of pillar-shaped guides using the primary hydroxyl group of the third block as an anchoring group.

17. The method of claim 14 , wherein the forming an organic liner comprises:
coating a random copolymer composition on the exposed surfaces of the plurality of pillar-shaped guides, the random copolymer composition including the random copolymer;
reacting the primary hydroxyl group of the third block and the plurality of pillar-shaped guides with each other by heat-treating the random copolymer composition coated on the exposed surfaces of the plurality of pillar-shaped guides, the random copolymer being attached to the exposed surfaces of the plurality of pillar-shaped guides; and
removing a non-reacted portion of the random copolymer composition using an organic solvent to expose the organic liner covering the exposed surfaces of the plurality of pillar-shaped guides.

18. A method of forming a pattern, the method comprising:
forming a feature layer on a substrate;
forming a plurality of first holes in the feature layer, the plurality of first holes being regularly arranged to have a first pitch;
forming a plurality of pillar-shaped guides filling the plurality of first holes, the plurality of pillar-shaped guides protruding upward further than the feature layer;
forming a block copolymer layer on the feature layer around the plurality of pillar-shaped guides, the block copolymer layer made of a ternary blend including a pure block copolymer including a first polymer block having a first repeat unit and a second polymer block having a second repeat unit, a first homopolymer having the first repeat unit, and a second homopolymer having the second repeat unit;
phase separating the block copolymer layer including,
forming a plurality of first domains regularly arranged on the feature layer with the plurality of pillar-shaped guides, and
forming a second domain on the feature layer surrounding the plurality of pillar-shaped guides and the plurality of first domains;

removing the plurality of first domains;

Assignees

• Park Jeong-Ju
• Kwon Seung-Chul
• Kim Eun-Sung
• Nam Jae-Woo
• Yi Shi-Yong
• Kim Hyun-Woo
• Samsung Electronics Co Ltd

Inventors

• Park Jeong-Ju
• Kwon Seung-Chul
• Kim Eun-Sung
• Nam Jae-Woo
• Yi Shi-Yong
• Kim Hyun-Woo

Classifications

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/2041 Primary

  Photolithographic processes · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/242

  of Group IV materials · CPC title