Susceptor for epitaxial processing and epitaxial reactor including the susceptor
US-2024006225-A1 · Jan 4, 2024 · US
US10100433B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10100433-B2 |
| Application number | US-201514937359-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 10, 2015 |
| Priority date | Nov 14, 2014 |
| Publication date | Oct 16, 2018 |
| Grant date | Oct 16, 2018 |
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A substrate holder having a base plate where a plurality of protruding poles is arranged, said poles spaced apart from one another by intermediate spaces. Alternatively or in addition, a plasma reactor for depositing diamond from the gas phase may be provided, the plasma reactor comprising such a substrate holder. A method for depositing diamond from the gas phase may be provided.
Opening claim text (preview).
We claim: 1. A substrate holder comprising: a base plate, wherein a plurality of protruding poles is arranged on the base plate, said poles spaced apart from one another by intermediate spaces; and a cover plate having a plurality of bores configured to receive the poles and to receive a plurality of substrates on end faces of the poles, wherein a first gap is present between a rim of the bores and outer edges of the poles, and wherein a second gap is present between a bottom of the cover plate and a top of the base plate. 2. The substrate holder of claim 1 , wherein the poles and the base plate are made as a single piece. 3. The substrate holder of claim 1 , wherein the poles are received in assigned bores of the base plate. 4. The substrate holder of claim 1 , wherein each pole has at least one of a length, a width, or a diameter of about 1 mm to about 10 mm or wherein each pole has a height of about 3 mm to about 10 mm. 5. The substrate holder of claim 1 , wherein the first gap has a distance within a range of about 0.3 mm to about 1 mm. 6. The substrate holder of claim 1 , wherein end faces of the poles are arranged about 0.3 mm to about 1.5 mm or about 0.5 mm to about 0.8 mm below an exterior surface of the cover plate. 7. The substrate holder of claim 1 , wherein the cover plate contains a cooling device or the cover plate is provided with fluid channels in which a heat transfer medium can circulate. 8. The substrate holder of claim 1 , wherein each of the poles is provided with one assigned heating device. 9. A plasma reactor for depositing diamond from a gas phase, the plasma reactor comprising: a substrate holder having a base plate, wherein a plurality of protruding poles is arranged on the base plate, said poles spaced apart from one another by intermediate spaces; and a cover plate having a plurality of bores configured to receive the poles and to receive substrates that are on end faces of the poles, wherein a first gap is present between a rim of the bores and outer edges of the poles, and wherein a second gap is present between a bottom of the cover plate and a top of the base plate. 10. The substrate holder of claim 1 , wherein no diamond from a gas phase is deposited between adjacent substrates that are coupled to the poles. 11. The substrate holder of claim 1 , wherein the substrates are soldered to the poles. 12. The substrate holder of claim 11 , wherein the substrates comprise monocrystalline diamond. 13. The substrate holder of claim 1 , wherein the base plate is provided with, or is in contact with, at least one heating device. 14. The substrate holder of claim 1 , wherein each of the poles is provided with one assigned heating resistor. 15. The substrate holder of claim 1 , wherein the substrates comprise a monocrystalline diamond. 16. The substrate holder of claim 1 , wherein the base plate, the cover plate, and the poles are arranged so that an exterior surface of the substrates lie in a plane defined by an exterior surface of the cover plate. 17. The substrate holder of claim 1 , wherein each of the end faces of the poles is equal to a surface area of each corresponding one of the substrates. 18. The substrate holder of claim 1 , wherein each of the end faces of the poles are configured to receive a corresponding one of the substrates.
Substrate holders or susceptors · CPC title
using plasma jets · CPC title
characterised by material of construction or surface finish of the means for supporting the substrate · CPC title
the substrate being of the same materials as the epitaxial layer · CPC title
Diamond · CPC title
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