Near field transducers including electrodeposited plasmonic materials and methods of forming

Patent metadata

Field	Value
Publication number	US-10100422-B2
Application number	US-201314036032-A
Country	US
Kind code	B2
Filing date	Sep 25, 2013
Priority date	Sep 25, 2013
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

Methods of forming near field transducers (NFTs) including electrodepositing a plasmonic material.

First claim

What is claimed is:

1. A method of forming a lollipop type near field transducer (NTL), the method comprising the steps:
forming a rod from at least a portion of an electrodeposited first plasmonic material, the rod having dimensions from 20 nm to 60 nm, wherein the rod is electrically grounded;
forming a photoresist mask on at least a portion of the first plasmonic material, the photoresist mask forming at least one opening,
wherein the rod is situated at least partially within the at least one opening;
depositing a diffusion barrier material within the at least one opening;
electrodepositing a second plasmonic material within the at least one opening at least twice; and
then removing the photoresist mask.

2. The method according to claim 1 , wherein the diffusion barrier material comprises rhodium (Rh), tungsten (W), tantalum (Ta), tantalum nitride (TaN), ruthenium (Ru), titanium (Ti), titanium nitride (TiN), or combinations thereof.

3. The method according to claim 1 further comprising electrodepositing the second plasmonic material on the diffusion barrier material.

4. The method according to claim 3 , wherein the second plasmonic material comprises gold (Au), silver (Ag), copper (Cu), alloys thereof, or combinations thereof.

5. A method of forming a lollipop type near field transducer (NTL), the method comprising the steps:
electrodepositing a 1 to 10 nm thick sheet of a first plasmonic material;
forming a photoresist mask on at least a portion of the first plasmonic material, the photoresist mask forming at least one opening;
electrodepositing a second plasmonic material at least in the at least one opening of the photoresist mask;
depositing a diffusion barrier material on the second plasmonic material in at least the at least one opening;
removing the photoresist mask; and
forming a rod, wherein the rod is formed from at least a portion of the 1 to 10 nm thick sheet of the first plasmonic material.

6. The method of claim 5 , wherein the first and the second plasmonic materials are the same material.

7. The method according to claim 5 further comprising depositing a seed layer before the sheet of the first plasmonic material is deposited.

8. The method of claim 5 , wherein the first plasmonic material and the second plasmonic material independently comprise gold (Au), silver (Ag), copper (Cu), alloys thereof, or combinations thereof.

9. The method of claim 5 further comprising electrodepositing a third material after the second plasmonic material is deposited in the at least one opening of the photoresist mask.

10. The method of claim 9 , wherein the third material is a heat sink material.

11. The method of claim 5 , wherein forming the rod comprises photolithography.

12. The method of claim 5 further comprising removing unwanted material after formation of the rod to obtain a NTL comprising a rod and associated disc.

13. A method of forming a lollipop type near field transducer (NTL), the method comprising the steps:
electrodepositing a sheet of a first plasmonic material the sheet of the first plasmonic material having a thickness from 20 nm to 60 nm;
forming a photoresist mask on at least a portion of the first plasmonic material, the photoresist mask forming at least one opening;
electrodepositing a second plasmonic material at least in the at least one opening of the photoresist mask, wherein the second plasmonic material does not entirely fill the at least one opening;
depositing a diffusion barrier material on the second plasmonic material in at least the at least one opening;
removing the photoresist mask; and
forming a rod, wherein the rod is formed from at least a portion of the first plasmonic material.

14. The method of claim 13 , wherein the diffusion barrier material is electrodeposited.

15. The method of claim 13 , wherein the diffusion barrier material is vacuum deposited.

16. The method of claim 13 , wherein the first plasmonic material and the second plasmonic material independently comprise gold (Au), silver (Ag), copper (Cu), alloys thereof, or combinations thereof.

17. The method of claim 13 , wherein the diffusion barrier material comprises rhodium (Rh), tungsten (W), tantalum (Ta), tantalum nitride (TaN), ruthenium (Ru), titanium (Ti), titanium nitride (TiN), or combinations thereof.

18. The method of claim 13 , wherein forming the rod comprises photolithography.

Assignees

• Seagate Technology Llc

Inventors

• Lee Lien
• Gong Jie
• Venkatasamy Venkatram
• Zhao Yongjun
• Zou Lijuan
• Hong Dongsung
• Tabakovic Ibro
• Ostrowski Mark

Classifications

• C25D5/022 Primary

  using masking means · CPC title

• C25D7/00

  Electroplating characterised by the article coated · CPC title

• C25D1/003

  3D structures, e.g. superposed patterned layers · CPC title

• C25D5/10

  Electroplating with more than one layer of the same or of different metals (for bearings C25D7/10) · CPC title

• C25D5/627

  Electroplating characterised by the visual appearance of the layers, e.g. colour, brightness or mat appearance · CPC title