Component for plasma apparatus and method of manufacturing the same

Patent metadata

Field	Value
Publication number	US-10100413-B2
Application number	US-201415039886-A
Country	US
Kind code	B2
Filing date	Nov 26, 2014
Priority date	Nov 29, 2013
Publication date	Oct 16, 2018
Grant date	Oct 16, 2018

Abstract

A base material is composed of a metal or ceramics, and an aluminum nitride coating is formed on an outermost surface thereof. The aluminum nitride coating is formed by impact sintering and contains fine particles having a particle diameter of 1 μm or less. A thickness of the aluminum nitride coating is no less than 10 μm. A film density of the aluminum nitride coating is no less than 90% An area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a 20 μm×20 μm unit area of the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%. Such a component for a plasma apparatus having the aluminum nitride coating can provide a strong resistance to plasma attack and radical attack.

First claim

What is claimed is:

1. A component for a plasma apparatus, the component comprising: a base material composed of a metal or ceramics; and an aluminum nitride coating formed on a surface of the base material, wherein a thickness of the aluminum nitride coating is no less than 10 μm, a film density of the aluminum nitride coating is no less than 90%, and an area ratio of aluminum nitride particles whose particle boundaries are recognizable existing in a unit area of 20μm×20 μm in the aluminum nitride coating is 0% to 90% while an area ratio of aluminum nitride particles whose particle boundaries are unrecognizable is 10% to 100%, wherein when the aluminum nitride coating is subjected to XRD analysis a ratio (lm/lc) of a most intensive peak lm of AIN to a most intensive peak lc of Al 2 O 3 is no less than 8.

2. The component for a plasma apparatus according to claim 1 , wherein the base material is composed of ceramics with a metal electrode embedded inside the ceramics, and the aluminum nitride coating is provided on the surface of the base material.

3. The component for a plasma apparatus according to claim 1 , wherein the aluminum nitride coating is an aluminum nitride coating formed by impact sintering.

4. The component for a plasma apparatus according to claim 1 , wherein an average particle diameter of all particles included in the aluminum nitride coating is no more than 5 μm.

5. The component for a plasma apparatus according to claim 1 , wherein the particles constituting the aluminum nitride coating include fine particles each having a particle diameter of no more than 1 μm.

6. The component for a plasma apparatus according to claim 1 , wherein the film thickness of the aluminum nitride coating is 10 to 200 μm and the film density of the aluminum nitride coating is no less than 99% and no more than 100%.

7. The component for a plasma apparatus according to claim 1 , wherein an average particle diameter of the aluminum nitride particles whose particle boundaries are recognizable is no more than 2 μm.

8. The component for a plasma apparatus according to claim 1 , wherein an average particle diameter of the aluminum nitride particles is 0.05to 5 μm.

9. The component for a plasma apparatus according to claim 1 , wherein the aluminum nitride coating is formed via polishing so as to have a surface roughness Ra of no more than 0.5 μm.

10. A method of manufacturing a component for a plasma apparatus according to claim 1 , the component comprising: a base material composed of a metal or ceramics; and an aluminum nitride coating formed on a surface of the base material, the aluminum nitride coating is formed by impact sintering, the method comprising the steps of: supplying a slurry containing aluminum nitride particles to a combustion flame; and spraying the aluminum nitride particles onto the base material so as to achieve a spraying speed of 400 to 1000 m/sec.

11. The method of manufacturing a component for a plasma apparatus according to claim 10 , wherein the aluminum nitride particles contained in the slurry are aluminum nitride particles having a purity of no less than 99.9%.

12. The method of manufacturing a component for a plasma apparatus according to claim 10 , wherein an average particle diameter of the aluminum nitride particle is 0.05 to 5 μm.

13. The method of manufacturing a component for a plasma apparatus according to claim 10 , wherein a film thickness of the aluminum nitride coating is no less than 10 μm.

14. The method of manufacturing a component for a plasma apparatus according to claim 10 , wherein the slurry containing the aluminum nitride particles is supplied to a center of the combustion flame.

15. The method of manufacturing a component for a plasma apparatus according to claim 10 , wherein a temperature of the combustion flame to which the slurry containing the aluminum nitride particles is supplied is adjusted to be less than a boiling point of the supplied aluminum nitride particles.

Assignees

• Toshiba Kk
• Toshiba Materials Co Ltd

Inventors

• Sato Michio
• Hino Takashi
• Nakatani Masashi

Classifications

• H10P50/242

  of Group IV materials · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title

• H01J37/32477

  characterised by the means for protecting vessels or internal parts, e.g. coatings · CPC title

• C04B35/62222

  obtaining ceramic coatings (coating of mortars, concrete, artificial or natural stone or ceramics C04B41/45; laminated ceramic products B32B18/00; coating of glass C03C17/00, applying ceramic coatings on silicon for semi-conductor purposes H10W; coating metallic materials C23) · CPC title