Atomic oscillator

Patent metadata

Field	Value
Publication number	US-10097191-B2
Application number	US-201615332185-A
Country	US
Kind code	B2
Filing date	Oct 24, 2016
Priority date	Oct 27, 2015
Publication date	Oct 9, 2018
Grant date	Oct 9, 2018

Abstract

An atomic oscillator includes a gas cell having alkali metal atoms sealed therein; alight source that irradiates the gas cell with light; and a light detecting unit that detects the quantity of light transmitted through the gas cell. The light source includes an optical oscillation layer having a first reflective layer, an active layer, and a second reflective layer laminated therein in this order, an electrical field absorption layer having a first semiconductor layer, a quantum well layer, and a second semiconductor layer laminated therein in this order, and a heat diffusion layer that is disposed between the optical oscillation layer and the electrical field absorption layer and has a higher thermal conductivity than that of the second reflective layer.

First claim

What is claimed is:

1. An atomic oscillator comprising:
a gas cell having alkali metal atoms sealed therein;
a light source that irradiates the gas cell with light; and
a light detecting unit that detects the quantity of light transmitted through the gas cell,
wherein the light source includes
an optical oscillation layer having a first reflective layer, an active layer, and a second reflective layer laminated therein in this order,
an electrical field absorption layer having a first semiconductor layer, a quantum well layer, and a second semiconductor layer laminated therein in this order, and
a heat diffusion layer that is disposed between the optical oscillation layer and the electrical field absorption layer and has a higher thermal conductivity than that of the second reflective layer.

2. The atomic oscillator according to claim 1 ,
wherein the heat diffusion layer is an i-type AlAs layer.

3. The atomic oscillator according to claim 1 ,
wherein the heat diffusion layer is an i-type GaAs layer.

4. The atomic oscillator according to claim 1 , further comprising:
a contact layer provided between the heat diffusion layer and the first semiconductor layer,
wherein a surface of the contact layer where the first semiconductor layer is disposed is provided with an electrode for applying a voltage to the electrical field absorption layer.

Assignees

• Seiko Epson Corp

Inventors

• Nishida Tetsuo

Classifications

• H01S5/04256

  characterised by the configuration · CPC title

• H01S5/04252

  characterised by the material · CPC title

• H01S5/18311

  using selective oxidation · CPC title

• H01S5/18302

  comprising an integrated optical modulator · CPC title

• H01S5/02461

  Structure or details of the laser chip to manipulate the heat flow, e.g. passive layers in the chip with a low heat conductivity · CPC title