MEMS double-layer suspension microstructure manufacturing method, and MEMS infrared detector

Patent metadata

Field	Value
Publication number	US-10093536-B2
Application number	US-201615573280-A
Country	US
Kind code	B2
Filing date	May 10, 2016
Priority date	May 13, 2015
Publication date	Oct 9, 2018
Grant date	Oct 9, 2018

Abstract

An MEMS double-layer suspension microstructure manufacturing method, comprising: providing a substrate; forming a first dielectric layer on the substrate; patterning the first dielectric layer to prepare a first film body and a cantilever beam connected to the first film body; forming a sacrificial layer on the first dielectric layer; patterning the sacrificial layer located on the first film body to make a recess portioned portion for forming a support structure, with the first film body being exposed at the bottom of the recess portioned portion; forming a second dielectric layer on the sacrificial layer; patterning the second dielectric layer to make the second film body and the support structure, with the support structure being connected to the first film body and the second film body; and removing part of the substrate under the first film body and removing the sacrificial layer to obtain the MEMS double-layer suspension microstructure.

First claim

What is claimed is:

1. A method of fabricating a micro-electro-mechanical system (MEMS) double-layer suspended microstructure, comprising:
providing a substrate;
forming a first dielectric layer on the substrate;
patterning the first dielectric layer to form a first film body and a cantilever beam connected to the first film body;
forming a sacrificial layer on the first dielectric layer;
patterning the sacrificial layer on the first film body to fabricate a recess portion for forming a support structure, and the first film body being exposed at a bottom of the recess portion;
forming a second dielectric layer on the sacrificial layer;
patterning the second dielectric layer to form a second film body and the support structure, and the support structure connecting the first film body and the second film body; and
removing a part of the substrate under the first film body, removing the sacrificial layer, and obtaining the MEMS double-layer suspended microstructure.

2. The method of claim 1 , wherein the part of the substrate under the first film body is removed by a dry etching process.

3. The method of claim 1 , wherein the part of the substrate under the first film body is removed by a gas phase xenon fluoride dry etching process or a deep reactive-ion etching process.

4. The method of claim 1 , wherein the sacrificial layer is a polyimide layer, and the sacrificial layer is removed by an oxygen plasma dry etching process; or
the sacrificial layer is made of amorphous silicon, and the sacrificial layer is removed by a dry etching process.

5. The method of claim 1 , wherein a thickness of the sacrificial layer is from 500 nm to 3000 nm.

6. The method of claim 1 , wherein thicknesses of both the first dielectric layer and the second dielectric layer are from 100 nm to 2000 nm.

7. The method of claim 1 , wherein the first dielectric layer and the second dielectric layer are made of silicon dioxide, silicon nitride, silicon oxynitride, a combination of two laminated layers of above materials, or a combination of three laminated layers of above materials.

8. The method of claim 1 , wherein the number of the cantilever beams is two, and the two cantilever beams are located on opposite sides of the first film body, respectively.

9. The method of claim 1 , wherein a projected area of the second film body in the horizontal direction is greater than a projected area of the first film body in the horizontal direction.

10. An MEMS infrared detector, comprising an MEMS double-layer suspended microstructure fabricated by the method of fabricating the MEMS double-layer suspended microstructure of claim 1 .

Assignees

• Csmc Technologies Fab2 Co Ltd

Inventors

• Jing Errong

Classifications

• B81C2201/0132

  Dry etching, i.e. plasma etching, barrel etching, reactive ion etching [RIE], sputter etching or ion milling · CPC title

• G01J5/20

  using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices · CPC title

• B81C1/00182 Primary

  Arrangements of deformable or non-deformable structures, e.g. membrane and cavity for use in a transducer · CPC title

• B81C2201/0109

  Sacrificial layers not provided for in B81C2201/0107 - B81C2201/0108 · CPC title

• B81C1/00

  Manufacture or treatment of devices or systems in or on a substrate (B81C3/00 takes precedence) · CPC title