Manufacturing method for semiconductor device and semiconductor device

Patent metadata

Field	Value
Publication number	US-10090352-B2
Application number	US-201715490764-A
Country	US
Kind code	B2
Filing date	Apr 18, 2017
Priority date	May 31, 2012
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

A step of forming a connecting member configured to electrically connect a first conductive line and a second conductive line includes a phase of perforating a laminate from a first semiconductor wafer to form a plurality of connection holes that reach the second conductive line and a phase of filling the plurality of penetrating connection holes with a conductive material to form conductive sections in contact with the second conductive line.

First claim

What is claimed is:

1. A semiconductor device comprising:
a first semiconductor substrate which is provided with a photodiode;
a second semiconductor substrate which is provided with a transistor;
a wiring structure which is disposed between the first semiconductor substrate and the second semiconductor substrate laminated with each other, the wiring structure including a first metal layer and a second metal layer arranged between the first semiconductor substrate and the second semiconductor substrate;
a first conductive section which penetrates the first semiconductor substrate; and
a second conductive section which penetrates the first semiconductor substrate, wherein the first conductive section and the second conductive section are electrically continuous with each other through the wiring structure.

2. The semiconductor device according to claim 1 , further comprising:
a third conductive section which penetrates the first semiconductor substrate; and
a fourth conductive section which penetrates the first semiconductor substrate,
wherein the first conductive section and the third conductive section are electrically continuous with each other,
the second conductive section and the fourth conductive section are electrically continuous with each other,
the first conductive section and the second conductive section are arranged along a first straight line, and
the third conductive section and the fourth conductive section are arranged along a second straight line which intersects with the first straight line.

3. The semiconductor device according to claim 1 , further comprising:
a third conductive section which penetrates the first semiconductor substrate; and
a coupling conductive section arranged on the first semiconductor substrate on a side opposite to the wiring structure,
wherein at least two of the first conductive section, the second conductive section, and the third conductive section are electrically continuous with each other through the coupling conductive section.

4. An electronic apparatus comprising:
the semiconductor device according to claim 1 ; and
a display device configured to display an image based on a signal obtained from the semiconductor device,
wherein the display device constitutes a touch panel.

5. The semiconductor device according to claim 1 ,
wherein the wiring structure includes a first metal layer and a second metal layer arranged between the first semiconductor substrate and the second semiconductor substrate,
a distance between the second metal layer and the second semiconductor substrate is smaller than a distance between the first metal layer and the second semiconductor substrate, and
the first conductive section is in contact with the first metal layer and the second metal layer.

6. The semiconductor device according to claim 5 , wherein the second conductive section is in contact with the first metal layer and the second metal layer.

7. The semiconductor device according to claim 1 ,
wherein a distance between the second metal layer and the second semiconductor substrate is different from a distance between the first metal layer and the second semiconductor substrate,
wherein the first conductive section and the second conductive section are in contact with the first metal layer,
and wherein the first metal layer and the second metal layer are electrically connected with each other through the first conductive section and the second conductive section.

8. The semiconductor device according to claim 7 , wherein the first conductive section and the second conductive section are electrically continuous with each other through one pattern of the first metal layer.

9. The semiconductor device according to claim 1 , wherein a thickness of the first semiconductor substrate is not more than 10 μm.

10. The semiconductor device according to claim 9 ,
further comprising an optical structure which is provided on the first semiconductor substrate,
wherein the first semiconductor substrate is provided with a transistor.

11. The semiconductor device according to claim 1 ,
wherein the wiring structure includes a first metal layer, a second metal layer and a third metal layer arranged between the first semiconductor substrate and the second semiconductor substrate,
a distance between the second metal layer and the second semiconductor substrate is larger than a distance between the third metal layer and the second semiconductor substrate,
and is smaller than a distance between the first metal layer and the second semiconductor substrate,
the first conductive section is in contact with the first metal layer, and
the second conductive section is in contact with the second metal layer.

12. The semiconductor device according to claim 11 ,
wherein the first conductive section is in contact with the second metal layer, and
the second conductive section is in contact with the first metal layer.

13. The semiconductor device according to claim 11 , wherein the first conductive section and the second conductive section are electrically continuous with each other through one pattern of the third metal layer.

14. A semiconductor device comprising:
a first semiconductor substrate provided with a photodiode;
a second semiconductor substrate provided with a transistor and laminated with the first semiconductor;
a wiring structure disposed between the first semiconductor substrate and the second semiconductor substrate, the wiring structure including a first metal layer and a second metal arranged between the first semiconductor substrate and the second semiconductor substrate;
a first conductive section penetrating the first semiconductor substrate; and
a second conductive section penetrating the first semiconductor substrate,

wherein the first conductive section and the second conductive section are electrically continuous with each other through the wiring structure, and
wherein a part of the first semiconductor substrate is disposed between the first conductive section and the second conductive section.

15. The semiconductor device according to claim 14 , further comprising:
a third conductive section which penetrates the first semiconductor substrate; and
a fourth conductive section which penetrates the first semiconductor substrate,
wherein the first conductive section and the third conductive section are electrically continuous with each other,
the second conductive section and the fourth conductive section are electrically continuous with each other, and
the first conductive section, the second conductive section, the third conductive section and the fourth conductive section are arranged along a straight line.

16. An electronic apparatus comprising:
the semiconductor device according to claim 14 ; and
a display device configured to display an image based on a signal obtained from the semiconductor device.

17. The semiconductor device according to claim 14 ,
wherein the second semiconductor substrate is provided with a semiconductor element, and
the first conductive section is electrically connected to the semiconductor element.

18. The semiconductor device according to claim 14 , wherein the first conductive section is electrically connected to an electrode pad.

19. A semiconductor device comprising:
a first semiconductor substrate provided with a photodiode;
a second semiconductor substrate provided with a transistor and laminated with the first semiconductor substrate;
a wiring structure disposed between the first semicondu

Assignees

• Canon Kk

Inventors

• Kumano Hideomi

Classifications

• H10W20/217

  comprising ring-shaped isolation structures outside of the via holes · CPC title

• H10W20/2134

  TSVs extending from the semiconductor wafer into back-end-of-line layers · CPC title

• H10W20/0253

  comprising forming the through-semiconductor vias after stacking of the chips, wafers or substrates · CPC title

• H10W20/0242

  comprising etching via holes from the back sides of the chips, wafers or substrates · CPC title

• H10W20/0234

  comprising etching via holes that stop on pads or on electrodes · CPC title