Conductive structure body precursor, conductive structure body and method for manufacturing the same
US-2015370359-A1 · Dec 24, 2015 · US
US10090275B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10090275-B2 |
| Application number | US-201514966585-A |
| Country | US |
| Kind code | B2 |
| Filing date | Dec 11, 2015 |
| Priority date | Mar 15, 2010 |
| Publication date | Oct 2, 2018 |
| Grant date | Oct 2, 2018 |
A practical reading order for non-experts. Skip the full description unless you need deep technical detail.
What the patent document calls the invention.
A short plain-language summary of the technical disclosure.
Who owns or filed the patent and who is credited as inventor.
Filing, priority, publication, and grant dates set the timeline.
The legal scope of protection — read this for what is actually claimed.
Technology tags used to group this patent with similar filings.
Prior art links and similar publications in this corpus.
Official abstract text for this publication.
A method of bonding two different substances includes the steps of: applying a bonding material containing a flux component that includes an organic material having at least two carboxyl groups to a bonding surface of a bonding object, disposing an object to be bonded on the bonding material, performing preliminary firing at a preset temperature in a state in which the object to be bonded is disposed, and performing a main firing by heating at a temperature higher than the temperature of the preliminary firing.
Opening claim text (preview).
The invention claimed is: 1. A method of bonding two different substances, comprising: applying a bonding material to a bonding surface of a bonding substrate, the bonding material containing silver nanoparticles having an average primary particle diameter of 1 to 200 nm, and a flux component that includes an organic material having at least two carboxyl groups; disposing an object to be bonded on the bonding material; performing preliminary firing at a preset temperature in a state in which the object to be bonded is disposed; and performing a main firing by heating at a temperature higher than the temperature of the preliminary firing to metallize the bonding material. 2. The bonding method according to claim 1 , wherein the flux component has an ether bond. 3. The bonding method according to claim 2 , wherein, in the preliminary firing and main firing, bonding is performed in an inert gas atmosphere. 4. The bonding method according to claim 3 , wherein the main firing is carried out at a temperature of 200° C. or higher and 500° C. or lower. 5. The bonding method according to claim 2 , wherein the main firing is carried out at a temperature of 200° C. or higher and 500° C. or lower. 6. The bonding method according to claim 1 , wherein, in the preliminary firing and main firing, bonding is performed in an inert gas atmosphere. 7. The bonding method according to claim 6 , wherein the main firing is carried out at a temperature of 200° C. or higher and 500° C. or lower. 8. The bonding method according to claim 1 , wherein the main firing is carried out at a temperature of 200° C. or higher and 500° C. or lower.
between stacked chips · CPC title
of die-attach connectors · CPC title
Controlling the bonding environment, e.g. atmosphere composition or temperature · CPC title
Soldering or alloying · CPC title
Compression bonding, e.g. thermocompression bonding · CPC title
Related publications grouped by family.
Answers are generated from the same data shown on this page.