Standard cell circuits employing high aspect ratio voltage rails for reduced resistance

US10090244B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10090244-B2
Application numberUS-201715634039-A
CountryUS
Kind codeB2
Filing dateJun 27, 2017
Priority dateJul 27, 2016
Publication dateOct 2, 2018
Grant dateOct 2, 2018

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

Standard cell circuits employing high aspect ratio voltage rails for reduced resistance are disclosed. In one aspect, a standard cell circuit is provided that employs a first high aspect ratio voltage rail configured to receive a first supply voltage. A second high aspect ratio voltage rail is employed that is disposed substantially parallel to the first high aspect ratio voltage rail. A voltage differential between the first and second high aspect ratio voltage rails is used to power a circuit device in the standard cell circuit. The first and second high aspect ratio voltage rails each have a height-to-width ratio greater than 1.0. The height of each respective first and second high aspect ratio voltage rail is greater than each respective width. Employing the first and second high aspect ratio voltage rails allows each to have a cross-sectional area that limits the resistance and corresponding IR drop.

First claim

Opening claim text (preview).

What is claimed is: 1. A standard cell circuit, comprising: a plurality of metal layers disposed in parallel along a vertical axis; a first high aspect ratio voltage rail extending along a first longitudinal axis in a first direction perpendicular to the vertical axis and through at least one metal layer among the plurality of metal layers along the vertical axis, the first high aspect ratio voltage rail having a height-to-width ratio defined as a ratio between a respective height and a respective width of the first high aspect ratio voltage rail greater than 1.0 and configured to receive a first supply voltage; a second high aspect ratio voltage rail extending along a second longitudinal axis in the first direction substantially parallel to the first high aspect ratio voltage rail and through the at least one metal layer along the vertical axis, the second high aspect ratio voltage rail having a height-to-width ratio defined as a ratio between a respective height and a respective width of the second high aspect ratio voltage rail greater than 1.0; and a circuit device electrically coupled to the first high aspect ratio voltage rail and the second high aspect ratio voltage rail, wherein a voltage differential between the first high aspect ratio voltage rail and the second high aspect ratio voltage rail provides power to the circuit device. 2. The standard cell circuit of claim 1 , further comprising one or more metal lines extending along one or more corresponding longitudinal axes different from the first longitudinal axis and the second longitudinal axis in the first direction substantially parallel to the first high aspect ratio voltage rail and the second high aspect ratio voltage rail, wherein: each metal line of the one or more metal lines has a width approximately equal to a critical dimension of a process technology of the standard cell circuit; the first high aspect ratio voltage rail has a width between approximately two (2) and three (3) times the width of each metal line of the one or more metal lines; and the second high aspect ratio voltage rail has a width approximately between two (2) and three (3) times the width of each metal line of the one or more metal lines. 3. The standard cell circuit of claim 2 , wherein: the height-to-width ratio of the first high aspect ratio voltage rail is approximately equal to 4.0; and the height-to-width ratio of the second high aspect ratio voltage rail is approximately equal to 4.0. 4. The standard cell circuit of claim 2 , wherein: the height-to-width ratio of the first high aspect ratio voltage rail is approximately equal to 3.0; and the height-to-width ratio of the second high aspect ratio voltage rail is approximately equal to 3.0. 5. The standard cell circuit of claim 2 , wherein: the height-to-width ratio of the first high aspect ratio voltage rail is approximately equal to 2.0; and the height-to-width ratio of the second high aspect ratio voltage rail is approximately equal to 2.0. 6. The standard cell circuit of claim 1 , further comprising one or more metal lines extending along one or more corresponding longitudinal axes different from the first longitudinal axis and the second longitudinal axis in the first direction substantially parallel to the first high aspect ratio voltage rail and the second high aspect ratio voltage rail, wherein: each metal line of the one or more metal lines has a width approximately equal to a critical dimension of a process technology of the standard cell circuit; the first high aspect ratio voltage rail has a width between approximately one (1) and two (2) times the width of each metal line of the one or more metal lines disposed in a metal layer; and the second high aspect ratio voltage rail has a width between approximately one (1) and two (2) times a critical dimension of a metal line of the one or more metal lines. 7. The standard cell circuit of claim 6 , wherein: the height-to-width ratio of the first high aspect ratio voltage rail is approximately equal to 4.0; and the height-to-width ratio of the second high aspect ratio voltage rail is approximately equal to 4.0. 8. The standard cell circuit of claim 6 , wherein: the height-to-width ratio of the first high aspect ratio voltage rail is approximately equal to 3.0; and the height-to-width ratio of the second high aspect ratio voltage rail is approximately equal to 3.0. 9. The standard cell circuit of claim 6 , wherein: the height-to-width ratio of the first high aspect ratio voltage rail is approximately equal to 2.0; and the height-to-width ratio of the second high aspect ratio voltage rail is approximately equal to 2.0. 10. The standard cell circuit of claim 1 , further comprising one or more metal lines extending along one or more corresponding longitudinal axes different from the first longitudinal axis and the second longitudinal axis in the first direction substantially parallel to the first high aspect ratio voltage rail and the second high aspect ratio voltage rail, wherein: each metal line of the one or more metal lines has a width approximately equal to a critical dimension of a process technology of the standard cell circuit; the first high aspect ratio voltage rail has a width approximately equal to the width of each metal line of the one or more metal lines disposed in a metal layer; and the second high aspect ratio voltage rail has a width approximately equal to the width of each metal line of the one or more metal lines. 11. The standard cell circuit of claim 10 , wherein: the height-to-width ratio of the first high aspect ratio voltage rail is approximately equal to 4.0; and the height-to-width ratio of the second high aspect ratio voltage rail is approximately equal to 4.0. 12. The standard cell circuit of claim 10 , wherein: the height-to-width ratio of the first high aspect ratio voltage rail is approximately equal to 3.0; and the height-to-width ratio of the second high aspect ratio voltage rail is approximately equal to 3.0. 13. The standard cell circuit of claim 10 , wherein: the height-to-width ratio of the first high aspect ratio voltage rail is approximately equal to 2.0; and the height-to-width ratio of the second high aspect ratio voltage rail is approximately equal to 2.0. 14. The standard cell circuit of claim 1 , wherein the second high aspect ratio voltage rail is configured to receive a second supply voltage. 15. The standard cell circuit of claim 1 , wherein the second high aspect ratio voltage rail is electrically coupled to ground. 16. The standard cell circuit of claim 1 integrated into an integrated circuit (IC). 17. The standard cell circuit of claim 1 integrated into a device selected from the group consisting of: a set top box; an entertainment unit; a navigation device; a communications device; a fixed location data unit; a mobile location data unit; a global positioning system (GPS) device; a mobile phone; a cellular phone; a smart phone; a session initiation protocol (SIP) phone; a tablet; a phablet; a server; a computer; a portable computer; a mobile computing device; a wearable computing device; a desktop computer; a personal digital assistant (PDA); a monitor; a computer monitor; a television; a tuner; a radio; a satellite radio; a music player; a digital music player; a portable music player; a digital video player; a video player; a digital video disc (DVD) player; a portable digital video player; an automobile; a vehicle component; avionics systems; a drone; and a multicopter. 18. A standard cell circuit, comprising:

Assignees

Inventors

Classifications

  • the principal metal being a refractory metal · CPC title

  • based on metals, e.g. alloys, metal silicides (H10W20/4484 takes precedence) · CPC title

  • Local interconnections · CPC title

  • Power or ground buses · CPC title

  • Barrier, adhesion or liner layers · CPC title

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Frequently asked questions

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What does patent US10090244B2 cover?
Standard cell circuits employing high aspect ratio voltage rails for reduced resistance are disclosed. In one aspect, a standard cell circuit is provided that employs a first high aspect ratio voltage rail configured to receive a first supply voltage. A second high aspect ratio voltage rail is employed that is disposed substantially parallel to the first high aspect ratio voltage rail. A voltag…
Who is the assignee on this patent?
Qualcomm Inc
What technology area does this patent fall under?
Primary CPC classification H10W20/4403. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 02 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 4 related publications on this page (citations in our corpus or others sharing the same primary CPC).