Method for separating substrates and semiconductor chip

Patent metadata

Field	Value
Publication number	US-10090198-B2
Application number	US-201414913681-A
Country	US
Kind code	B2
Filing date	Aug 6, 2014
Priority date	Aug 22, 2013
Publication date	Oct 2, 2018
Grant date	Oct 2, 2018

Abstract

Disclosed is a method for separating a substrate ( 1 ) along a separation pattern ( 4 ), in which method a substrate ( 1 ) is provided and an auxiliary layer ( 3 ) is applied to the substrate, said layer covering the substrate at least along the separation pattern. The substrate comprising the auxiliary layer is irradiated, such that the material of the auxiliary layer penetrates the substrate along the separation pattern in the form of an impurity. The substrate is broken along the separation pattern. A semiconductor chip ( 15 ) is also disclosed.

First claim

The invention claimed is:

1. A method for separating a substrate along a separation pattern, comprising the following steps:
a) providing the substrate;
b) applying an auxiliary layer, which covers the substrate at least along the separation pattern;
c) irradiating, via a laser beam, the substrate with the auxiliary layer, such that material of the auxiliary layer penetrates into the substrate as an impurity along the separation pattern; and
d) breaking, using a wedge breaking method, the substrate along the separation pattern, wherein the breaking comprises a mechanical loading of the substrate.

2. The method according to claim 1 , wherein the impurity embrittles the substrate along the separation pattern.

3. The method according to claim 1 , wherein material of the auxiliary layer indiffuses into the substrate in step c).

4. The method according to claim 1 , wherein in step c) the substrate melts locally and material of the auxiliary layer is alloyed therein.

5. The method according to claim 1 , wherein the substrate is metallic.

6. The method according to claim 1 , wherein the auxiliary layer contains an amide.

7. The method according to claim 1 , wherein the auxiliary layer contains urea.

8. The method according to claim 1 , wherein the auxiliary layer is applied to the substrate over the whole area in step b).

9. The method according to claim 1 , wherein nitrogen is introduced into the substrate as the impurity along the separation pattern.

10. The method according to claim 1 , wherein the irradiation in step c) is carried out by means of the laser beam in pulsed operation or in continuous wave operation.

11. A semiconductor chip comprising:
a semiconductor body; and
a metallic substrate body, on which the semiconductor body is arranged,
wherein a side surface of the metallic substrate body has a mechanical breaking edge,
wherein the substrate body has, in an edge region adjoining the side surface, a concentration of an impurity that is at least twice as high as that in a region spaced apart from the side surface,
wherein the semiconductor body is fixed to the metallic substrate body via a connection layer,
wherein the connection layer comprises a solder or a conductive adhesive, and
wherein the metallic substrate body is completely metallic on a side of the connection layer facing away from the semiconductor body.

12. A method for separating a substrate along a separation pattern, comprising the following steps:
a) providing the substrate;
b) applying an auxiliary layer, which covers the substrate at least along the separation pattern;
c) irradiating, via a laser beam, the substrate with the auxiliary layer, such that material of the auxiliary layer penetrates into the substrate as an impurity along the separation pattern, wherein the substrate is made from a metallic material, and the impurity penetrates into the metallic material of the substrate; and
d) breaking the substrate along the separation pattern, wherein the breaking comprises a mechanical loading of the substrate.

Assignees

• Osram Opto Semiconductors Gmbh

Inventors

• Kaempf Mathias

Classifications

• H10P95/50

  Alloying conductive materials with semiconductor bodies · CPC title

• H10P34/42

  with electromagnetic radiation, e.g. laser annealing (laser cutting H10P54/20) · CPC title

• H10P32/14

  within a single semiconductor body or layer in a solid phase; between different semiconductor bodies or layers, both in a solid phase · CPC title

• H10W40/258

  Metallic materials (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

• H10W40/22

  characterised by their shape, e.g. having conical or cylindrical projections · CPC title