Use of etch resist masked anode frame for facilitation of laser cutting, particle and leakage current reduction

US10090112B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10090112-B2
Application numberUS-201614996456-A
CountryUS
Kind codeB2
Filing dateJan 15, 2016
Priority dateJan 15, 2016
Publication dateOct 2, 2018
Grant dateOct 2, 2018

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

The present invention is directed to a method of etching anode foil in a non-uniform manner which minimizes thermal oxidation during foil cutting. Having less oxide improves the ability to cut through aluminum anodes with lower energy rates. In aluminum foils, it has been found that a masking step before etching reduces conversion of boehmite aluminum oxide to alpha-phase corundum during laser cutting of anodes, which increases edge quality and productivity. Additionally, the non-etched anode frame allows for less surface area to form during the aging process. As a result, the leakage current is reduced by the proportion of edge to anode surface area, and the aging process will be faster, leading to higher productivity.

First claim

Opening claim text (preview).

What is claimed is: 1. A process for etching a metal foil, comprising: depositing an etch-resistant mask upon predetermined portions of a metal foil to define a perimeter of an anode; placing the masked metal foil in an etch electrolyte solution; etching said masked metal foil, such that the exposed area is etched; and removing the etch-resistant mask, wherein removing the mask leaves an unetched perimeter. 2. The process of claim 1 , further comprising the step of cutting the metal foil along the unetched perimeter, to form an etched foil anode. 3. The process of claim 1 , wherein the etch-resistant mask is selected from the group consisting of an acrylic ink, poly(4-hydroxystyrene), copolymers of 4-hydroxystyrene, novolac resins, fluorocarbon polymers, cycloaliphatic polymers, polyurethane polyols, polyesterurethanes, and cross-linked variants and copolymers and mixtures thereof. 4. The process of claim 1 , wherein the etch-resistant mask is deposited using inkjet printing, lithography, or photolithography. 5. The process of claim 1 , wherein the metal foil is an aluminum foil. 6. A process for creating a metal anode foil, comprising: depositing an etch-resistant mask directly upon predetermined portions of the metal foil, thereby defining an anode perimeter; placing the masked metal foil in an etch electrolyte solution; etching said masked metal foil, such that the exposed area is etched; removing the etch-resistant mask, wherein removing the etch-resistant mask leaves an unetched perimeter; widening; forming; and cutting the foil along the unetched perimeter, to form an etched foil anode; wherein the cut foil has less thermal oxide formation along the perimeter than a foil cut without masking. 7. The process of claim 6 , wherein the etch-resistant mask is selected from the group consisting of an acrylic ink, poly(4-hydroxystyrene), copolymers of 4-hydroxystyrene, novolac resins, fluorocarbon polymers, cycloaliphatic polymers, polyurethane polyols, polyesterurethanes, and cross-linked variants and copolymers and mixtures thereof. 8. The process of claim 7 , wherein the etch-resistant mask comprises an acrylic ink. 9. The process of claim 6 , wherein the etch-resistant mask is deposited using inkjet printing, lithography, or photolithography. 10. The process of claim 9 , wherein the etch-resistant mask is deposited using inkjet printing. 11. A process for creating a metal anode foil, comprising: applying an etch-resistant mask to predetermined portions of a metal foil to define an anode perimeter; placing the masked metal foil in an etch electrolyte solution; etching said masked metal foil, such that the exposed area is etched; removing the etch-resistant mask, wherein removing the etch-resistant mask leaves an unetched perimeter; widening; forming; and cutting the foil along the unetched perimeter, to form an etched foil anode; wherein the cut foil has less thermal oxide formation along the perimeter than a foil cut without masking, wherein thermal oxidation of the anode foil is reduced by greater than 99%. 12. A process for etching a metal foil, comprising: applying an etch-resistant mask to predetermined portions of a metal foil to define a perimeter of an anode; placing the masked metal foil in an etch electrolyte solution; etching said masked metal foil, such that the exposed area is etched; and removing the etch-resistant mask, wherein removing the mask leaves an unetched perimeter, wherein thermal oxidation of the etched, masked metal foil is reduced by greater than 99% than a foil etched without masking. 13. The process of claim 1 , wherein the etch-resistant mask is deposited upon an unetched surface of the metal foil. 14. The process of claim 6 , wherein the etch-resistant mask is deposited directly upon an unetched surface of the metal foil. 15. The process of claim 1 , further comprising the step of curing the mask. 16. The process of claim 1 , wherein removing the etch-resistant mask comprises removing the etch-resistant mask using chemical means. 17. The process of claim 1 , wherein removing the etch-resistant mask comprises removing the etch-resistant mask using ethyl lactate. 18. The process of claim 1 , wherein removing the etch-resistant mask comprises removing the etch-resistant mask using an oven to burn the etch-resistant mask away. 19. The process of claim 1 , wherein depositing the etch-resistant mask upon the predetermined portions of the metal foil to define the perimeter of the anode comprises printing a line having alternating line gaps on the metal foil. 20. The process of claim 1 , wherein depositing the etch-resistant mask upon the predetermined portions of the metal foil to define the perimeter of the anode comprises printing an etch-resistant mask on the metal foil. 21. The process of claim 1 , wherein depositing the etch-resistant mask upon the predetermined portions of the metal foil to define the perimeter of the anode comprises depositing the etch-resistant mask such as to form the mask directly upon the predetermined portions of the metal foil such as to define the perimeter of the anode prior to etching the foil.

Assignees

Inventors

Classifications

  • Processes of manufacture · CPC title

  • H01G9/042Primary

    characterised by the material (H01G11/22 takes precedence) · CPC title

  • Aqueous compositions · CPC title

  • Etched foil electrodes · CPC title

  • H01G9/145Primary

    Liquid electrolytic capacitors (H01G11/00 takes precedence) · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10090112B2 cover?
The present invention is directed to a method of etching anode foil in a non-uniform manner which minimizes thermal oxidation during foil cutting. Having less oxide improves the ability to cut through aluminum anodes with lower energy rates. In aluminum foils, it has been found that a masking step before etching reduces conversion of boehmite aluminum oxide to alpha-phase corundum during laser …
Who is the assignee on this patent?
Pacesetter Inc
What technology area does this patent fall under?
Primary CPC classification H01G9/042. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Oct 02 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).